GaN功率开关器件的产业发展动态
发布时间：2018-11-16 14:33
【摘要】：氮化镓(GaN)功率电子器件具有优异的电学特性,在高速、高温和大功率领域具有十分广阔的应用前景,满足下一代功率管理系统对高效节能、小型化和智能化的需求。P型栅和Cascode结构的常关型GaN器件已逐步实现产业化,但鉴于这两种器件结构本身存在的缺点,常关型GaN MOSFET器件方案备受关注。目前,GaN功率开关器件主要朝高频化发展,封装形式从直插型(TO)封装向贴片式(QFN)封装演变,为进一步消除寄生效应对器件高速开关特性造成的不良影响,驱动和功率器件集成的GaN功率集成电路(IC)技术被采用,单片集成的全GaN功率IC是未来的发展方向。
[Abstract]:Gallium nitride (GaN) power electronic devices have excellent electrical properties and have a wide application prospect in high speed, high temperature and high power fields, which can meet the needs of the next generation power management system for high efficiency and energy saving. In order to realize the miniaturization and intelligentization, the constant switch GaN devices with P gate and Cascode structure have been industrialized step by step. However, due to the shortcomings of these two devices, the scheme of GaN MOSFET devices with constant switching has attracted much attention. At present, GaN power switch devices are developing towards high frequency, and the packaging form changes from direct (TO) package to chip type (QFN) package. In order to eliminate the adverse effect of parasitic effect on the high speed switch characteristics of the device, GaN power integrated circuit (IC) technology is used to drive and integrate power devices, and monolithic integrated full GaN power IC is the future development direction.
【作者单位】： 中山大学电子与信息工程学院电力电子及控制技术研究所;
【基金】：国家重点研发计划项目(2017YFB0402800) 国家自然科学基金(U1601210)~~
【分类号】：TN303
本文编号：2335782
[Abstract]:Gallium nitride (GaN) power electronic devices have excellent electrical properties and have a wide application prospect in high speed, high temperature and high power fields, which can meet the needs of the next generation power management system for high efficiency and energy saving. In order to realize the miniaturization and intelligentization, the constant switch GaN devices with P gate and Cascode structure have been industrialized step by step. However, due to the shortcomings of these two devices, the scheme of GaN MOSFET devices with constant switching has attracted much attention. At present, GaN power switch devices are developing towards high frequency, and the packaging form changes from direct (TO) package to chip type (QFN) package. In order to eliminate the adverse effect of parasitic effect on the high speed switch characteristics of the device, GaN power integrated circuit (IC) technology is used to drive and integrate power devices, and monolithic integrated full GaN power IC is the future development direction.
【作者单位】： 中山大学电子与信息工程学院电力电子及控制技术研究所;
【基金】：国家重点研发计划项目(2017YFB0402800) 国家自然科学基金(U1601210)~~
【分类号】：TN303
【相似文献】
相关期刊论文 前10条
1 王赋攀,杨鹏;MOSFET功率开关器件的散热计算[J];通信电源技术;2005年01期
2 梁南丁;朱荣花;;大功率变频装置主电路及器件的选择与应用[J];机电产品开发与创新;2009年03期
3 刘玉书,赵忠;IGR——一种新型的功率开关器件的研制[J];微电子学与计算机;1986年11期
4 马文忠,李耀华,孔力;线路谐振对大功率变频装置影响的研究[J];电气传动;2005年08期
5 ;苏州纳米所GaN/Si功率开关器件研究获得重要突破[J];人工晶体学报;2012年03期
6 赵正平;;GaN功率开关器件的发展与微尺度功率变换(续)[J];半导体技术;2014年02期
7 Harold M．Stillman,杨维莉;用于中等电压的兆瓦级功率开关器件─—IGCT[J];国外内燃机车;1998年05期
8 赵正平;;GaN功率开关器件的发展与微尺度功率变换[J];半导体技术;2014年01期
9 王久和;新型功率开关器件IGCT及其应用[J];华北矿业高等专科学校学报;2000年03期
10 魏进;姚尧;张波;刘扬;;具有逆向导通能力的GaN功率开关器件[J];电力电子技术;2012年12期
相关硕士学位论文 前2条
1 周琦;碳化硅MOSFET驱动技术研究[D];山东大学;2016年
2 刘爽;AlGaN/GaN MIS-HEMT功率开关器件电学特牲研究[D];重庆师范大学;2015年
，本文编号：2335782
本文链接：https://www.wllwen.com/jingjilunwen/chanyejingjilunwen/2335782.html
