衬底温度对碲化镉薄膜性质及太阳电池性能的影响

发布时间：2017-12-26 23:05

本文关键词：衬底温度对碲化镉薄膜性质及太阳电池性能的影响　出处：《无机材料学报》2016年02期 　论文类型：期刊论文

【摘要】：蒸汽输运法是制备高质量且大面积均匀的Cd Te薄膜的一种优良的方法。采用自主研发的一套蒸汽输运沉积系统制备了Cd Te多晶薄膜,并研究了衬底温度对Cd Te薄膜性质及太阳电池性能的影响。利用XRD、SEM、UV-Vis和Hall等测试手段研究了衬底温度对薄膜的结构、光学性质和电学性质的影响。结果表明,蒸汽输运法制备的Cd Te薄膜具有立方相结构,且沿(111)方向高度择优。随着衬底温度的升高(520℃~640℃),Cd Te薄膜的平均晶粒尺寸从2?m增大到约6?m,Cd Te薄膜的载流子浓度也从1.93×1010 cm 3提高到2.36×1013 cm 3,说明提高衬底温度能够降低Cd Te薄膜的缺陷复合,使薄膜的p型更强。实验进一步研究了衬底温度对Cd Te薄膜太阳电池性能的影响,结果表明适当提高衬底温度,能够大幅度提高电池的效率、开路电压和填充因子,但是过高的衬底温度又会降低电池的长波光谱响应,导致电池转换效率的下降。经过参数优化,在衬底温度为610℃、无背接触层小面积Cd Te薄膜太阳电池的转换效率达到11.2%。
[Abstract]:Steam transport is an excellent method for the preparation of high quality and large area uniform Cd Te films. Cd Te polycrystalline thin films were prepared by a self developed vapor transport deposition system. The effects of substrate temperature on the properties of Cd Te thin films and solar cell performance were studied. The effects of substrate temperature on the structure, optical properties and electrical properties of the films were investigated by means of XRD, SEM, UV-Vis and Hall. The results show that the Cd Te films prepared by the vapor transport method have a cubic phase structure and are highly preferred in the direction of (111). With the increase of substrate temperature (520 DEG ~640 DEG), the average grain size of Cd Te films from 2? M increased to about 6? M, the carrier concentration of Te films from 1.93 Cd * 1010 cm 3 to 2.36 x 1013 cm 3, indicating the increase of substrate temperature can reduce the Cd Te thin film composite defects. The P film is stronger. We also studied the effect of substrate temperature on the properties of Cd Te thin film solar cells, the results showed that the suitable increase of substrate temperature, can greatly improve the efficiency of the battery, the open circuit voltage and the fill factor, but the long wave spectrum over high substrate temperature will reduce the battery response, resulting in a decline in cell conversion efficiency. By optimizing the parameters, the conversion efficiency of Cd Te thin film solar cells at 610 C substrate temperature and no back contact layer is 11.2%.
【作者单位】：四川大学材料科学工程学院;
【基金】：国家高技术研究发展计划(2015AA050610)~~
【分类号】：TM914.4;TB383.2
【正文快照】： (College of Materials Science and Engineering,Sichuan University,Chengdu 610065,China)Cd Te薄膜太阳能电池具有转换效率高、稳定性高及生产成本低等优点,近年来受到科研和产业的广泛关注。Cd Te为直接带隙半导体,室温下带隙宽度为1.45 e V,带隙值与太阳光谱匹配[1]。Cd

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