不同基底对退火制备Ni纳米岛掩模形貌的影响

发布时间：2018-01-03 10:02

  本文关键词：不同基底对退火制备Ni纳米岛掩模形貌的影响　出处：《功能材料》2017年09期 　论文类型：期刊论文

  更多相关文章： GaN 退火 Ni纳米岛 制备

【摘要】：目前,刻蚀自组装在GaN薄膜上Ni纳米岛的掩模的方法是制备GaN纳米柱阵列常用手段。但是,这将对后续制备出的纳米柱产生Ni污染。除此之外,直接将GaN系的材料暴露在高温下进行Ni纳米岛掩模的制备,会对GaN材料表面产生一定的热腐蚀损伤。因此,以GaN、SiO_2、Al_2O_3和SixNy分别为基底,对退火自组装在这4种基底上的Ni纳米岛形貌进行了较为系统的研究。发现850℃的退火温度下,Al_2O_3基底上Ni薄膜形成的纳米岛的形貌最为规整,为最优化衬底。
[Abstract]:At present, the method of etching the mask of Ni nanoisland on GaN thin film is a common method to fabricate GaN nano-column array. However, this will cause Ni pollution to the subsequent prepared nano-columns. Direct exposure of GaN system materials to the preparation of Ni nano-island masks at high temperature will cause some hot corrosion damage on the surface of GaN materials. Al_2O_3 and SixNy were used as substrates respectively. The morphology of Ni nanoisland on the four kinds of substrates was studied systematically. It was found that the morphology of Ni nanoislands was annealed at 850 鈩，

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