Cu氧化物薄膜及纳米线器件的电阻开关特性研究

发布时间：2018-01-03 13:28

本文关键词：Cu氧化物薄膜及纳米线器件的电阻开关特性研究　出处：《暨南大学》2015年硕士论文　论文类型：学位论文

【摘要】：本文主要研究了氧化铜纳米线(CuO NW)器件和铜氧化物薄膜器件的电阻开关特性。首先,采用热氧化法制备了大量的CuO NW,利用一种简单的液体点滴法进行CuO NW电阻式随机存储器(RRAM)器件的组装,对CuO NW器件表面形貌、电学性能进行了表征,结果发现一维的CuO NW RRAM器件具有明显的电阻开关特性,进一步的分析表明这种电阻开关效应可以用导电灯丝的热效应进行解释。接着,利用直流磁控溅射法,在载玻片和FTO导电玻璃上采用不同的沉积条件(氧气流量分别6 sccm、9 sccm、12 sccm、15 sccm、18 sccm、21 sccm、24 sccm)分别溅射了具有不同氧含量的Cu氧化物薄膜,通过X射线衍射(XRD)和透射谱的测量,发现随着氧气流量的不断变化,薄膜成分从纯的Cu2O变为Cu2O和CuO的混合物,最后又变为纯的CuO。最后,制备了不同电极材料(Ag、Cu)、不同立体结构(平面结构、立体结构)、不同氧分量(CuO、Cu2O)的Cu氧化物薄的RRAM器件。通过电学测试对比,我们发现了以下四点:1)平面结构的Cu氧化物薄膜RRAM器件阻变现象不明显。2)用Cu电极和Ag电极制作的RRAM器件都观察到了双极型特性,前者制作的RRAM器件具有更大的高低阻值比;且Cu电极RRAM器件能观察到单极型的阻变现象。3)在以Cu电极作为上电极的铜氧化物薄膜立体结构的RRAM器件中,CuO薄膜的RRAM器件比Cu2O薄膜的RRAM器件更稳定,可控性和耐受性更好。4)铜氧化物薄膜器件中的电阻开关效应同样可以用导电灯丝的热效应进行解释。
[Abstract]:This paper mainly studies the copper oxide nanowires (CuO NW) resistance switching characteristic and copper oxide thin film devices. Firstly, a large number of CuO NW were prepared by thermal oxidation method, CuO NW resistive random access memory using a simple liquid drop method (RRAM) device assembly, on the surface of the NW device CuO the morphology and electrical properties were studied, the results showed that CuO NW RRAM device with one-dimensional resistive switching characteristics obviously, further analysis shows that the resistance switching effect can be explained by the thermal effect of conductive filament. Then, using DC magnetron sputtering with different deposition conditions on glass and FTO conductive glass (oxygen the flow rate were 6 SCCM, 9 SCCM, 12 SCCM, 15 SCCM, 18 SCCM, 21 SCCM, 24 SCCM) Cu oxide films with different oxygen content respectively by sputtering, X ray diffraction (XRD) measurement and transmission spectrum, we found that with the Changing the flow rate of oxygen, the composition of the film from the pure Cu2O into a mixture of Cu2O and CuO, and finally turned into pure CuO. finally, different electrode materials were prepared (Ag, Cu), different three-dimensional structure (planar structure, three-dimensional structure), different oxygen components (CuO, Cu2O) RRAM devices Cu thin oxide. By comparing the electrical test, we found the following four points: 1) Cu oxide thin film RRAM devices with planar structure variable resistance phenomenon is not obvious.2) with RRAM devices Cu and Ag electrodes have been observed in bipolar RRAM device characteristics, the former have produced a greater level of resistance ratio; and Cu electrode of the RRAM device can observe unipolar resistive phenomenon in.3) using Cu electrode as the RRAM device of copper oxide film on the electrode of the three-dimensional structure of RRAM device of CuO thin film is more stable than RRAM Cu2O thin film devices, controllability and resistance of.4 copper oxide film) The resistance switching effect in the device can also be explained by the thermal effect of the conductive filament.

【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383

【相似文献】