梯度AZO薄膜的制备及其性能的研究

发布时间：2018-01-04 01:16

  本文关键词：梯度AZO薄膜的制备及其性能的研究　出处：《辽宁工业大学》2017年硕士论文　论文类型：学位论文

  更多相关文章： 梯度AZO薄膜 沉积温度 铝浓度梯度 退火处理 钝化层

【摘要】：在当前的光伏市场中,晶体硅太阳电池仍起着关键性的作用,为了提高光电转换效率,其表面钝化是必不可少的。本文结合Al2O3和AZO薄膜的优点,设计了一种梯度AZO薄膜,薄膜中铝浓度从表面到晶硅界面处呈现梯度变化,界面处高的铝浓度有助于硅衬底钝化,表面处较低的铝浓度可以改善光电性能。本文采用原子层沉积法(ALD)制备梯度AZO薄膜,通过X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)、原子力显微镜(AFM)、霍尔效应测试仪、紫外可见分光光度计、准稳态光电导衰减法(QSSPC)等对薄膜的晶体结构、表面形貌、电学、光学以及钝化性能进行表征和分析。探究工艺条件对梯度AZO薄膜性能的影响,结果表明,所有的梯度AZO薄膜均具有良好的六方纤锌矿结构。沉积温度对薄膜的取向、晶粒尺寸、结晶度等均具有影响,从而较大的影响了薄膜的光电性能,而对其钝化性能的影响相对较小。随着沉积温度的升高,薄膜的结晶质量先增加后减小,电阻率先减小后增大。所有梯度AZO薄膜的可见光区平均透射率均大于80%。当沉积温度为150℃时,薄膜具有最优的钝化性能。探究铝浓度梯度对梯度AZO薄膜性能的影响,结果表明,铝浓度梯度对薄膜的光电及钝化性能均有较大的影响。随着铝浓度梯度的增加,薄膜的结晶质量变差,表现出非晶趋势,这造成薄膜的电学性能随之恶化。所有梯度AZO薄膜在可见光区的平均透过率超过80%,除此之外,沉积态的梯度AZO薄膜均起到了一定的钝化效果。探究退火工艺对梯度AZO薄膜钝化p型硅表面的影响,结果表明,退火对钝化性能有着显著的影响。铝浓度梯度为0.71%/nm的梯度AZO薄膜,少子寿命最高为120.6μs,与沉积态13.2μs相比提高了约9.2倍。当对退火温度进行优化后,梯度AZO薄膜的钝化效果又有了较大的提升。退火温度为500℃时,少子寿命提高到135.7μs。表面复合速率为191.3cm/s,与裸体硅片(5854.8cm/s)相比,降低了一个数量级。梯度AZO薄膜不仅具有良好的光电性能,同时还起到良好的表面钝化效果。因此,梯度AZO薄膜作为晶体硅太阳电池表面钝化层,具有很大的应用前景。
[Abstract]:In the current photovoltaic market, crystalline silicon solar cells still play a key role, in order to improve the photoelectric conversion efficiency, its surface passivation is essential. This paper combines the advantages of Al2O3 and AZO thin films. A gradient AZO thin film was designed, in which the concentration of aluminum changed from the surface to the interface of crystal silicon, and the high concentration of aluminum at the interface was helpful to passivation of silicon substrate. Low aluminum concentration on the surface can improve the photoelectric properties. In this paper, gradient AZO thin films were prepared by atomic layer deposition (ALD), and X-ray diffractometer (XRD) was used. X-ray photoelectron spectrometer (XPS), atomic force microscope (AFM), Hall effect tester, UV-Vis spectrophotometer. The crystal structure, surface morphology, electrical, optical and passivation properties of the films were characterized and analyzed by quasi-steady photoconductivity attenuation method. The effects of process conditions on the properties of gradient AZO films were investigated. The results show that all gradient AZO films have good hexagonal wurtzite structure, and the deposition temperature has an effect on the orientation, grain size and crystallinity of the films. Thus, the photoelectric properties of the films are greatly affected, but the passivation performance is relatively small. With the increase of deposition temperature, the crystallization quality of the films increases first and then decreases. The resistance decreases first and then increases. The average transmittance in the visible region of all gradient AZO films is greater than 80. The deposition temperature is 150 鈩，

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