离子源辅助高功率脉冲磁控溅射制备N掺杂p型ZnO薄膜

发布时间：2018-01-05 10:34

本文关键词：离子源辅助高功率脉冲磁控溅射制备N掺杂p型ZnO薄膜　出处：《北京印刷学院》2015年硕士论文　论文类型：学位论文

【摘要】：氧化锌(Zn O)为宽禁带(3.37 e V)半导体材料,可以通过掺杂实现半导体到导体的电性变化,可用于制备透明导电薄膜和半导体薄膜。更为重要的是Zn O具有高达60me V的激子束缚能,理论上可以在室温(26 me V)乃至更高温度下实现紫外激子发光。但由于宽禁带半导体材料掺杂的非对称性现象,使得Zn O材料的p型制备十分困难,限制了其在光电设备上应用。虽然已经有很多实验组报道制备出较好性能的p-Zn O,但离实际应用的要求还是相差甚远,很难做到高空穴浓度、高载流子迁移率、性能稳定又重复性良好的样品,主要原因是:(1)掺杂浓度低,受主缺陷浓度不高,并且受主能级较深,不易解离活化成为有效的受主;(2)Zn O中本征缺陷对掺杂的补偿作用明显,掺杂后还存在自补偿现象;(3)p-type掺杂的稳定性和重复性不好。针对掺杂浓度低,本论文采用离子源辅助高功率脉冲磁控溅射(Hi PIMS)技术,以氮气为氮源,进行N掺p-type氧化锌制备与性能的实验研究。论文获得如下结论:(1)利用Hi PIMS的高能量密度,提高N~+与Zn~+的反应活性,有利于提高N的掺杂浓度;(2)采用感应耦合等离子体源(ICP)辅助,增加掺杂N_2解离度,获得高比例N+/N_(2+)比,提供高浓度的活性N原子等离子体;(3)ICP辅助Hi PIMS可以制备p-ZnO薄膜。
[Abstract]:Zinc oxide (ZnO) is a wide band gap (3.37e V) semiconductor material, which can change the electrical properties of semiconductor to conductor by doping. It can be used to prepare transparent conductive film and semiconductor film. More importantly, Zno has exciton binding energy up to 60 EV. The ultraviolet exciton emission can be realized theoretically at room temperature (26me V) or higher temperature, but due to the asymmetry phenomenon of wide band gap semiconductor material doping. It is very difficult to prepare Zno material with p-type, which limits its application in optoelectronic equipment. Although many experimental groups have reported the preparation of p-Zn O with better performance. However, the requirements of practical applications are still far from the requirements, it is difficult to achieve high-altitude hole concentration, high carrier mobility, stable and reproducible samples, the main reason is the low doping concentration. The acceptor defect concentration is not high, and the acceptor energy level is deep, so it is difficult to dissociate and activate to become an effective acceptor. The intrinsic defects in Zn-O have obvious compensation effect on doping, and there is self-compensation phenomenon after doping. The stability and repeatability of p-type doping is not good. Aiming at the low doping concentration, the ion-source assisted high-power pulsed magnetron sputtering (Hi-PIMS) technique with nitrogen as the nitrogen source is used in this paper. The preparation and properties of p-type zinc oxide doped with N were studied. The following conclusions were obtained: 1) the high energy density of Hi PIMS was used to improve the activity of N- and Zn-. It is beneficial to increase the concentration of N doping. (2) Inductively coupled plasma source (ICP) is used to increase the dissociation degree of doped Ns _ 2 and to obtain a high ratio of N / N _ 2) to provide a high concentration of active N atom plasma. The p-ZnO thin films can be prepared by ICP-assisted Hi PIMS.
【学位授予单位】：北京印刷学院
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ132.41;TB383.2

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