PZT厚膜的电射流沉积研究

发布时间：2018-01-11 19:22

本文关键词：PZT厚膜的电射流沉积研究　出处：《大连理工大学》2015年硕士论文　论文类型：学位论文

更多相关文章： PZT 厚膜 电射流沉积 抛光 柔性衬底

【摘要】：PZT厚膜具有高压电性能和机电耦合系数,在高频超声传感器、微换能器、微变形镜等高性能微器件方面具有广阔的应用前景。利用电射流沉积技术(Electrohydrodynamic jet deposition, EJD)制备膜时,具有沉积速率高、膜结构可控性强等优点。本文配制了PZT悬浮液,利用电射流沉积技术制备了PZT厚膜,首先研究了电射流沉积参数、悬浮液混合条件对厚膜致密性的影响,并对PZT厚膜进行了溶胶的渗透；然后对电射流沉积的PZT厚膜进行了抛光处理,研究了厚膜表面粗糙度和厚度对PZT厚膜压电性质的影响；最后研究了柔性衬底的PZT厚膜沉积。首先,制备了PZT复合悬浮液,以硅片为衬底,电射流沉积了PZT厚膜,研究了电射流沉积高度、流量及悬浮液混合条件对厚膜致密性的影响,降低电射流沉积高度和流量有助于提高PZT厚膜致密性,利用球磨方法混合的PZT悬浮液,沉积的PZT厚膜致密性明显提高,制备了无裂纹的PZT厚膜。为了进一步提高厚膜的致密性,研究了PZT厚膜的溶胶渗透,溶胶渗透后的PZT厚膜致密性明显提高。然后,研究了电射流沉积PZT厚膜的机械抛光工艺,经过机械抛光处理,PZT厚膜的表面粗糙度Ra从422nm降低到23nnm。此外,分析了厚膜表面粗糙度和厚度对PZT厚膜压电性质的影响,降低表面粗糙度促进了PZT厚膜压电性质的提高,当PZT膜厚为10μm-60μm之间时,PZT膜压电性质随着膜厚的增加显著增大,当膜厚在60μm-80μm之间时,厚膜压电性质趋于平缓,当膜厚高于80μm时,其压电性质明显下降。在PZT膜厚为68μm时,压电常数d33为91pC/N。最后,在不锈钢和铁镍合金柔性衬底上沉积了PZT厚膜,采用双面均匀沉积PZT厚膜,解决了应力不均导致柔性衬底弯曲问题,获得了柔性衬底/PZT厚膜复合元件,并集成在压电式振动能量采集器和磁电换能式振动能量采集器中。
[Abstract]:PZT thick film has high piezoelectric performance and electromechanical coupling coefficient in high frequency ultrasonic sensors, micro transducers. High performance microdevices such as microdeformable mirrors have broad application prospects. Electrohydrodynamic jet deposition is used in electrojet deposition. In this paper, PZT suspensions were prepared and PZT thick films were prepared by electrojet deposition. Firstly, the influence of electrojet deposition parameters and suspension mixing conditions on the densification of thick film was studied, and the sol permeation of PZT thick film was carried out. The effect of surface roughness and thickness on the piezoelectric properties of PZT thick film was studied. Finally, PZT thick film deposition on flexible substrate was studied. Firstly, PZT composite suspension was prepared. PZT thick film was deposited by electrojet on silicon substrate, and the deposition height of PZT was studied. The effect of flow rate and suspension mixing condition on the density of thick film was studied. The density of thick film of PZT was improved by reducing the deposition height and flow rate of electrojet. The PZT suspension mixed by ball milling method was used. The density of the deposited PZT thick film was improved obviously, and the crack-free PZT thick film was prepared. In order to further improve the densification of the thick film, the sol permeation of the PZT thick film was studied. The densification of PZT thick film was improved obviously after the sol permeated. Then, the mechanical polishing process of PZT thick film deposited by electrojet was studied and treated by mechanical polishing. The surface roughness Ra of PZT film is reduced from 422nm to 23nm. In addition, the effect of surface roughness and thickness on piezoelectric properties of PZT thick film is analyzed. The reduction of surface roughness promotes the improvement of piezoelectric properties of PZT thick films. When the thickness of PZT films is between 10 渭 m and 60 渭 m, the piezoelectric properties of PZT films increase significantly with the increase of film thickness. When the thickness of the film is between 60 渭 m and 80 渭 m, the piezoelectric property of the thick film tends to be smooth, and when the thickness of the film is higher than 80 渭 m, the piezoelectric property of the film decreases obviously. When the thickness of PZT film is 68 渭 m, the piezoelectric property of the film tends to be flat. The piezoelectric constant D33 is 91 PC / N. finally, PZT thick films were deposited on stainless steel and Fe-Ni alloy flexible substrates, and PZT thick films were uniformly deposited on both sides. The bending problem of flexible substrate caused by uneven stress is solved, and the flexible substrate / PZT thick film composite element is obtained and integrated into piezoelectric vibration energy collector and magnetoelectric transducer vibration energy collector.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ153;TB383.2

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