应变锗薄膜的制备与表征

发布时间：2018-01-24 19:48

本文关键词： 应变锗氮化硅锗发光二极管直接带隙间接带隙　出处：《黑龙江大学》2015年硕士论文　论文类型：学位论文

【摘要】：随着“摩尔定律”的提出,硅基微电子器件的特征尺寸已经达到了物理极限,人们开始为扩大硅基微电子技术而努力。实际上,硅作为光学器件集成的平台已经被广泛的研究了。然而硅是间接带隙材料不能作为高效率光源的这一事实,已经阻碍了它的发展。人们开始关注其他的IV族半导体材料。作为候选材料的锗虽然也是间接带隙,但是其直接带与间接带之差仅为0.136eV,并且引入张应变可以使这一差值进一步减小。本文采用等离子体增强化学气相沉积法制备出具有高应力的氮化硅薄膜。通过氮化硅致应变技术将应变引入到锗薄膜材料中,并将锗薄膜材料制作成发光二极管,探究二极管的制作工艺流程,成功地验证了锗的电致发光性能,本文为锗发光的研究提供了基础。
[Abstract]:With the advance of "Moore's law", the feature size of silicon microelectronic devices has reached the physical limit, people began to expand the silicon microelectronic technology. In fact, as silicon optical device integration platform has been widely studied. However, silicon is an indirect bandgap material is not as the fact that the high efficiency light source. Has hindered its development. People begin to pay close attention to IV semiconductor materials. As the other candidate materials of germanium though is an indirect band gap, but the direct and indirect band difference is only 0.136eV, and the strain can make such a difference is further reduced. By using plasma enhanced chemical vapor was prepared with silicon nitride thin films of high stress phase deposition of silicon nitride. The strain induced strain technology will be introduced into the germanium thin film material, and germanium thin film material into the light emitting diode, two pole probe The fabrication process of the tube has successfully verified the electroluminescent properties of germanium. This paper provides a basis for the study of germanium luminescence.

【学位授予单位】：黑龙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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