基于ZnO纳米阵列的硅薄膜太阳能电池

发布时间：2018-02-01 12:33

本文关键词： ZnO纳米阵列硅薄膜太阳能电池等离子增强化学气相沉淀法　出处：《湖南师范大学》2015年硕士论文　论文类型：学位论文

【摘要】：本硕士论文提出了一种基于ZnO纳米阵列的n-ZnO/p-Si异质结太阳能电池,其结构为:FTO或AZO透明导电玻璃/ZnO籽晶层/ZnO纳米阵列/硅薄膜/金属电极。本论文具体研究了该太阳能电池结构的制备方法和表征,通过改变工艺条件和制备参数研究制备此结构的太阳能电池。电池的主要制备过程为:首先在FTO或AZO透明导电玻璃衬底上采用溶胶-凝胶法形成ZnO籽晶层,化学溶液生长法在籽晶层上制备ZnO纳米阵列;其次采用等离子增强化学气相沉淀法(PECVD)在ZnO纳米阵列表面制备硅薄膜;最后在硅薄膜上蒸镀金属电极制备成太阳能电池。与其他太阳能电池结构相比,本电池结构中硅薄膜在ZnO纳米棒上形核生长,形成硅薄膜包覆ZnO纳米阵列的结构。此结构设计使得硅薄膜与纳米阵列全面接触,能充分利用纳米阵列传递载流子的作用,提升电池的光伏转换效率。本论文采用金属Al诱导晶化法制备多晶硅薄膜,实验中引入的元素Al扩散到ZnO中为N型掺杂,扩散到Si中为P型掺杂,不仅避免在制备或使用过程中掺杂元素互扩散导致的电池性能变化,又能形成有效的pn结,提高电池的开路电压。本实验室已经成功制备出硅薄膜全面包覆ZnO纳米阵列的电池结构。在实验中,通过改变ZnO生长中前驱体Zn2+的浓度、反应时间,调控制备N型ZnO纳米阵列形貌;通过改变制备硅薄膜的制备温度和沉积时间、硼烷掺杂浓度等制备包覆ZnO纳米阵列的P型硅薄膜。利用X射线衍射仪、紫外-可见分光光度计、扫描电子显微镜、激光拉曼光谱仪和四探针对制备出的太阳能电池各层薄膜的晶体结构、表面形貌、光学性质和电学性质进行探究。
[Abstract]:This paper presents a solar cell arrays of ZnO n-ZnO/p-Si heterogeneous based on the structure of FTO or AZO transparent conductive glass /ZnO seed layer /ZnO nano array / silicon film / metal electrode. This paper studied the preparation method and characterization of the solar cell structure, by changing the process conditions and the preparation parameters on Preparation of solar cell structure. The main battery preparation process is as follows: first, in the FTO or AZO transparent conductive glass substrates by sol-gel method to form the ZnO seed layer, the preparation of ZnO nano arrays on the seed layer by chemical solution growth method; followed by plasma enhanced chemical vapor precipitation (PECVD) preparation of silicon films on ZnO nano array surface; finally in silicon thin film deposited on metal electrodes prepared by solar cells. Compared with other solar cell structure, the cell structure of silicon films on ZnO nano rod On the nucleation and growth, the formation structure of silicon thin film coated ZnO nano array structure. This design makes the silicon thin film and nano array full contact, can fully transfer the carrier using nano array, photovoltaic conversion efficiency of the battery. This paper adopts the metal induced crystallization of polycrystalline silicon thin films by Al method, Al element diffusion experiment is introduced to ZnO type N doped, diffused to Si for P type doping, not only to avoid changes in battery performance preparation or doping process leads to mutual diffusion, and can effectively improve the formation of PN junction, open circuit voltage of the battery. The lab has successfully prepared cell structure of silicon thin film full covered ZnO nano array. In the experiment, the concentration change of precursor ZnO growth Zn2+ reaction time, control of preparation of N type ZnO nano array morphology; by changing the preparation of silicon thin film preparation temperature and deposition time, boron P type silicon thin film were prepared with ZnO doped nano array. By using X - ray diffractometer, UV VIS spectrophotometer, scanning electron microscope, the crystal structure of solar cell, laser Raman spectroscopy and four probe on the preparation of the each layer of film surface morphology, optical properties and electrical properties to explore.

【学位授予单位】：湖南师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM914.4;TB383.1

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