单晶SiC化学机械抛光液化学反应参数研究

发布时间：2018-02-07 15:25

  本文关键词： 单晶碳化硅 化学机械抛光 芬顿反应 化学反应参数 材料去除率 表面粗糙度　出处：《机械设计与制造》2017年09期 　论文类型：期刊论文

【摘要】：选择影响化学机械抛光化学反应速率的参数:催化剂浓度、氧化剂浓度、抛光液的pH值、抛光液温度等进行了试验,研究了它们对基于芬顿反应的单晶SiC化学机械抛光效果的影响规律。发现只有当H_2O_2浓度高于20%、Fe_3O_4浓度高于1.25%时,增大H_2O_2、Fe_3O_4浓度,材料去除率才会显著越高,此时材料去除速率由化学液腐蚀速度与磨料机械去除速度共同决定;低于此范围时由磨料的机械作用决定。温度升高会加速H_2O_2分解,抑制羟基自由基·OH的生成,减缓化学腐蚀,降低材料去除率。当Fe_3O_4浓度、H_2O_2浓度、pH值、抛光液温度分别为1.25%、15%、7、41℃时,化学腐蚀与机械去除的协调性及磨料的分散性较好,表面粗糙度最低;当它们分别为5%、25%、9.3、15℃时,材料去除率最高。
[Abstract]:The parameters influencing the chemical reaction rate of chemical-mechanical polishing, such as the concentration of catalyst, the concentration of oxidant, the pH value of polishing liquid, the temperature of polishing liquid, etc. In this paper, we have studied their effect on the chemical mechanical polishing of single crystal SiC based on Fenton reaction. It is found that only when the concentration of HStut _ 2O _ 2 is higher than 20 / 20 / Fe3O _ 4 and the concentration of S _ 2O _ 2Fe _ 3O _ 4 is higher than 1.25, the material removal rate will be significantly higher by increasing the concentration of H _ 2O _ 2Fe _ 3O _ 4, At this time, the material removal rate is determined by both chemical liquid corrosion rate and abrasive mechanical removal rate; below this range, it is determined by the mechanical action of abrasive. The increase of temperature accelerates the decomposition of H _ 2O _ 2, inhibits the formation of hydroxyl radical 路OH, and slows down chemical corrosion. Reducing the material removal rate. When the concentration of Fe_3O_4 and the concentration of H _ 2O _ 2 are as high as pH value, and the polishing liquid temperature is 1.2515 / 741 鈩，

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