a-C基底对WS_x薄膜组织结构及摩擦学性能的影响

发布时间：2018-02-23 13:12

本文关键词： WS a-C 微观结构磁控溅射摩擦与磨损　出处：《浙江工业大学学报》2017年05期 　论文类型：期刊论文

【摘要】：采用磁控溅射法在不同气压下溅射石墨靶制备多种a-C基体并在其上沉积WS_x薄膜.采用扫描电镜、能谱仪、原子力显微镜、X射线衍射仪、Raman光谱仪和X射线光电子能谱对薄膜的形貌、成分、组织结构和元素价态等进行了表征.采用纳米压痕仪、划痕仪和球盘式摩擦磨损试验机对薄膜的硬度、结合力和摩擦学性能进行了测试.结果表明:a-C基底上WS_x薄膜呈微晶或非晶结构,a-C沉积气压1.0Pa时WS_2薄膜出现(101)晶面衍射峰.随着a-C基底沉积气压的升高,WS_x薄膜表面先逐渐致密,后略有下降,n_s/n_w比呈下降趋势,显著低于硅基底WS_x薄膜,WS_x薄膜的硬度在6~8.5GPa之间.在大气环境下,基底沉积气压为0.6Pa的WS_x的摩擦系数最低,耐磨性最差.
[Abstract]:Various a-C substrates were deposited on various a-C substrates by magnetron sputtering on graphite targets at different pressures. Scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) were used to prepare a-C substrates. The morphology, composition, microstructure and valence states of the films were characterized by atomic force microscopy (AFM), X-ray diffractometer (AFM) and X-ray photoelectron spectroscopy (XPS). Hardness of film by scratch tester and ball disk friction and wear tester, The adhesion and tribological properties of the WS_x films on the a-C substrate were measured. The results show that the WS_x films exhibit a diffraction peak on the crystal plane when the deposition pressure of a-C is 1.0 Pa. With the increase of the deposition pressure of a-C substrates, the surface of the WS_2 thin films becomes denser and denser. After that, there was a downward trend in the number of s / n / w ratio, which was significantly lower than that of the WS_x thin film on silicon substrate with hardness between 6 and 8.5 GPA. In atmospheric environment, the friction coefficient and wear resistance of WS_x with substrate deposition pressure of 0.6 Pa were the lowest and the worst.
【作者单位】：浙江工业大学材料科学与工程学院;
【分类号】：TB383.2

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