掺硼纳米硅颗粒的脉冲放电制备及测试分析

发布时间：2018-02-28 06:09

  本文关键词： 掺硼 纳米硅颗粒 脉冲放电 纳米硅浆料 方阻　出处：《太阳能学报》2017年11期 　论文类型：期刊论文

【摘要】：以掺硼硅锭(电阻率0.01Ω·cm)作为原材料,在液体介质中采用脉冲放电法制备出掺硼纳米硅颗粒。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、纳米粒径电位分析(PSDA)、原子发射光谱(ICP-OES)等测试手段对获得的产物进行测试分析,绝大部分纳米硅颗粒尺寸集中在30~60 nm,其硼含量的质量分数为19×10-4%。在此基础上,将制备纳米硅颗粒配制为质量分数为15%的纳米硅浆料,通过丝网印刷在太阳硅片上,经850℃高温烧结后,硅片表面方阻可由100Ω□/降到30Ω□/。
[Abstract]:Using boron-doped silicon ingot (resistivity 0.01 惟 路cm) as raw material, Boron doped nanocrystalline silicon particles were prepared by pulse discharge method in liquid medium. The obtained products were tested and analyzed by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), nano-particle size potential analysis (PSDAA), atomic emission spectroscopy (ICP-OES), etc. Most of the nanocrystalline silicon particles are concentrated in 30 ~ 60 nm, and the boron content is 19 脳 10 ~ (-4). On this basis, nano-silicon particles are prepared into nano-silicon paste with mass fraction of 15% and printed on the solar silicon wafer by screen. After high temperature sintering at 850 鈩，

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