脉冲偏压对磁过滤阴极电弧离子镀ta-C薄膜性能的影响

发布时间：2018-03-05 06:00

本文选题：脉冲偏压　切入点：磁过滤　出处：《真空科学与技术学报》2017年01期 　论文类型：期刊论文

【摘要】：在不同脉冲偏压值下采用90°弯管磁过滤阴极电弧离子镀于硅片表面制备四面体非晶碳膜(Ta-C),研究了脉冲偏压对薄膜硬度、沉积速率、表面形貌及键价结构的影响。结论表明,薄膜沉积速率随脉冲偏压值的增加呈先增后减趋势,偏压值与膜层硬度值呈负相关性,高的偏压会抑制膜层中sp3键的形成,还能在一定程度上抑制大颗粒形成。本文研究内容为工业应用中通过脉冲偏压调整优化膜层综合性能提供参考。
[Abstract]:Tetrahedral amorphous carbon films were prepared on the surface of silicon wafers by using 90 掳bend tube magnetically filtered cathode arc ion plating under different pulse bias voltage. The effects of pulse bias on the hardness, deposition rate, surface morphology and bond structure of the films were studied. The deposition rate increased firstly and then decreased with the increase of pulse bias voltage. The bias value was negatively correlated with the hardness of the film. High bias voltage inhibited the formation of sp3 bond in the film. It can also inhibit the formation of large particles to a certain extent. This paper provides a reference for optimizing the comprehensive properties of the film by pulse bias adjustment in industrial applications.
【作者单位】：合肥工业大学机械工程学院;
【分类号】：TB383.2

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