BTO薄膜的制备及其调制器应用的基础研究

发布时间：2018-03-10 17:43

  本文选题：BTO薄膜　切入点：电光调制　出处：《哈尔滨工业大学》2016年硕士论文　论文类型：学位论文

【摘要】：新一代光网络信号处理需要高性能的波导调制器,高电光性能的波导材料是制作高性能调制器的前提。钛酸钡(BTO)薄膜材料具有优良的电光特性、高度可集成性和优异的衬底兼容性。随着微电子加工技术的不断发展,BTO薄膜材料在高速电光器件方面具有重要的应用前景。本论文对于BTO薄膜的制备表征、实验测试和调制器结构设计进行了研究。在成功制备BTO薄膜的基础上,通过调制器波导结构设计,从而实现对光信号的高速调制。采用溶胶-凝胶法制备BTO薄膜。探讨旋涂BTO薄膜的层数对样品厚度的影响,通过分析成膜情况优化制备工艺。研究旋涂参数及烘干温度对薄膜厚度和成膜质量的影响,确定出最优BTO薄膜质量所对应的工艺参数。利用X射线衍射法分析了不同退火温度对薄膜结晶性能的影响,得到最佳结晶温度为700℃。推导了电光系数的测量公式,搭建测试系统,利用简单反射法对BTO薄膜电光系数进行了研究,得到532nm波长下电光系数为87.5pm/V。设计波导结构,利用激光直写光刻技术研究了波导加工工艺,获得了10μm的光刻分辨率,满足了波导加工精度的要求。研究BTO薄膜脊形波导结构对于波导传输模式的影响。采用有效折射率法,对脊型波导单模传输进行模拟仿真,得到单模传输条件的波导结构参数,优化的BTO薄膜波导内外脊高分别为600 nm和300 nm,脊宽小于1μm。设计Y分支型、定向耦合器型两种不同分束器结构的马赫-曾德尔电光调制器,研究弯曲波导曲率半径、分束器长度等结构参数对于光信号传输的影响,得出最佳结构参数,为器件制作提供参考。
[Abstract]:The new generation optical network signal processing needs the high performance waveguide modulator, the high electro-optic waveguide material is the premise of making the high performance modulator, the barium titanate BTO-thin film material has the excellent electro-optic characteristic, the new generation optical network signal processing needs the high performance waveguide modulator. High integration and excellent substrate compatibility. With the development of microelectronic processing technology, BTO thin film material has an important application prospect in high-speed electro-optic devices. In this paper, the preparation of BTO thin films is characterized. Experimental test and modulator structure design are carried out. On the basis of successfully fabricating BTO thin films, the waveguide structure of modulator is designed. The BTO thin films were prepared by sol-gel method. The effect of the number of layers of spin-coated BTO films on the thickness of the samples was discussed. The effects of spin-coating parameters and drying temperature on film thickness and film quality were studied by analyzing the process of film formation. The effects of different annealing temperatures on the crystalline properties of BTO films were analyzed by X-ray diffraction method. The optimum crystallization temperature was obtained at 700 鈩，

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