基于弹性绝缘层构筑并五苯有机薄膜场效应晶体管

发布时间：2018-03-14 04:40

  本文选题：有机薄膜场效应晶体管　切入点：并五苯薄膜　出处：《东北师范大学》2017年硕士论文　论文类型：学位论文

【摘要】：近几十年来,关于并五苯有机薄膜场效应晶体管的研究已经非常广泛。由于其有较高的迁移率、可以大面积制备、能与柔性衬底兼容等优点,常被应用在价格低廉、大规模的柔性电子产品当中。然而为了促进其在柔性方面的发展,常用具有柔性、弹性的有机聚合物绝缘层代替无机绝缘层。其中聚二甲基硅氧烷(PDMS)是最常见的硅基聚合物材料,由于其有生物兼容性、绝缘特性、光学透明、弹性等优点,常作为衬底、封装层和弹性印章等。然而,由于无法在PDMS表面真空蒸镀获得有机薄膜,因此其很少被应用在薄膜场效应晶体管中。目前也没有文献报道如何在PDMS表面获得有机薄膜,更无法基于PDMS绝缘层直接构筑柔性薄膜晶体管。针对以上的问题,我们对PDMS表面进行修饰,获得致密的并五苯薄膜。其次基于此方法构筑三种器件结构的柔性并五苯薄膜晶体管,并探究弯曲对器件性能的影响。主要工作如下:1、研究了并五苯薄膜的制备过程中沉积温度、原料纯度对器件性能的影响以及其在空气中的不稳定性。发现用提纯后的并五苯材料,保持50℃沉积温度可以获得更好的并五苯薄膜。同时发现当并五苯薄膜场效应晶体管暴露在空气中,器件性能有明显下降。2、本次实验选择柔弹性优异的PDMS作为器件的绝缘层,并且针对不能在PDMS表面真空蒸镀有机薄膜的问题,设计了一种全干修饰的方法。通过优化全干修饰中氧等离子体处理和气相OTS修饰两个必不可少的过程,得到当氧等离子处理时间为100 s,OTS修饰时间为7 h时器件迁移率为0.65 cm2V 1s 1。3、构筑了基于PDMS绝缘层的柔性并五苯有机薄膜晶体管,其中包括三种器件结构。对器件进行多次弯曲后,仍可获得场效应性能。其中构筑的可贴合器件结构可以随三维曲面衬底形状的改变而变化。这样的器件结构对大规模、可穿戴电子器件的发展提供了可能。
[Abstract]:In recent decades, the field effect transistors of pentaben organic thin films have been widely studied. Due to their high mobility, large area preparation, compatibility with flexible substrates and so on, they are often used in low cost. In large scale flexible electronic products, however, in order to promote the development of flexibility, it is commonly used with flexibility. Polydimethylsiloxane (PDMS) is the most common silicon-based polymer material, which is often used as a substrate because of its advantages of biological compatibility, insulation, optical transparency, elasticity and so on. However, organic films are rarely used in thin film field effect transistors (FET) because they can not be deposited on PDMS surface by vacuum evaporation. There is no literature on how to obtain organic thin films on PDMS surface. We can't build flexible thin film transistors directly based on PDMS insulator. In view of the above problems, we modify the surface of PDMS. Dense pentabenzene thin films were obtained. Secondly, flexible pentabenzene thin film transistors with three kinds of device structures were constructed based on this method. The main work is as follows: 1. The deposition temperature during the preparation of penta-benzene thin films was studied. Effects of Purity of Raw Materials on the Properties of Devices and their instability in Air. A better pentabenzene film can be obtained by keeping the deposition temperature at 50 鈩，

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