溅射靶功率对W-C:H薄膜结构与摩擦学性能的影响

发布时间：2018-03-28 04:10

本文选题：W-C　切入点：H薄膜　出处：《表面技术》2017年11期

【摘要】：目的研究不同溅射功率对W-C:H涂层结构与摩擦学性能的影响。方法用非平衡磁控溅射(UBMS)+等离子体增强化学气相沉积法(PECVD),以WC靶作为溅射靶,C2H2为反应气体,通过调制溅射靶功率,在316不锈钢与Si(100)基体上制备了W-C:H系列薄膜。通过场发射电镜(FESEM)、X射线衍射仪(XRD)、拉曼光谱对薄膜的微观结构和成分进行了表征。用UMT-3MT多功能摩擦机对薄膜的摩擦学性能进行了分析。结果 W-C主要以β-WC1-x纳米晶的形式均匀分布在非晶碳中,并表现出(200)面择优生长。随着溅射靶功率的上升,薄膜内W含量逐渐升高,(200)面衍射峰逐渐增强,sp2含量先降低后升高。靶功率在1.4 k W时具有较好的摩擦学性能,摩擦系数为0.15,磨损率为3.92×10-7 mm~3/(N·m)。结论随着溅射靶功率逐渐升高,柱状晶逐渐变粗,涂层的致密性逐渐降低,薄膜摩擦学性能与WC含量密切相关。
[Abstract]:Aim to study the effect of different sputtering power on the structure and tribological properties of W-C:H coating. Methods using unbalanced magnetron sputtering (UBMS) plasma enhanced chemical vapor deposition method, using WC target as sputtering target and C _ 2H _ 2 as reaction gas, the power of sputtering target was modulated. W-C:H series films were prepared on 316 stainless steel and Si-100) substrates. The microstructure and composition of the films were characterized by field emission electron microscopy (FESE) X-ray diffractometer and Raman spectroscopy. The tribological properties of the films were investigated by UMT-3MT multifunctional friction machine. Results W-C mainly distributes uniformly in amorphous carbon in the form of 尾 -WC 1-x nanocrystals. With the increase of sputtering target power, the W content in the film increases gradually, and the diffraction peak increases gradually. The content of sp2 decreases first and then increases. The target power of 1.4 kW has good tribological properties. The friction coefficient is 0.15 and the wear rate is 3.92 脳 10 ~ (-7) mm~3/(N 路m ~ (-1). Conclusion with the increasing of sputtering power, the columnar crystal becomes thicker and the compactness of the coating decreases. The tribological properties of the films are closely related to WC content.
【作者单位】：昆明理工大学材料科学与工程学院;中国科学院宁波材料技术与工程研究所中国科学院海洋新材料与应用技术重点实验室浙江省海洋材料与防护技术重点实验室;
【基金】：中国科学院战略性先导科技专项(A类)资助(XDA13040602) 国家自然科学基金(51475449) 国家973计划项目子课题(2014CB643302) 宁波市工业重大科技专项(201701ZD-A01099)~~
【分类号】：TB383.2

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