石墨烯修饰钼掺杂钒酸铋薄腊光电极的制备及光电化学性能的研究

发布时间：2018-05-14 16:33

本文选题：钼掺杂钒酸铋 + 石墨烯修饰　；参考：《青岛科技大学》2015年硕士论文

【摘要】：多金属氧化物钼掺杂BiVO_4是一种稳定、廉价同时环境友好的半导体材料,而石墨烯因其优异的光、电、热、磁等效应也引起了科研工作者的广泛关注。在光催化或光电化学材料设计领域,新型的石墨烯基-半导体复合材料被广泛认为是一种极具应用潜力的太阳能转换材料。在本文中,通过恒电流还原沉积法在Mo掺杂BiMo_(0.03)V_(0.97)O_4 (BiMoV O)光电化学薄膜表面制备了石墨烯包覆层。当石墨烯沉积时间为600 s时的BiMoVO/Graphene (BiMoVO/G)光阳极具有最佳的光电化学性能,在外加偏压为1 V时光生电流密度达到35 mA/cm~2,较单纯的BiMoVO光阳极提升了约2.3倍,同时该光电极具有很高的光电化学稳定性。光电化学性能的提升得益于石墨烯包覆层可成为BiMoVO薄膜产生的光生电子的受体,同时石墨烯上的光生电子可通过石墨烯传输通道迅速向基底传递,从而有效提升了光生电子和空穴的分离效率,延长了光生电子的寿命。
[Abstract]:Polymetallic molybdenum doped BiVO_4 is a stable, cheap and environmentally friendly semiconductor material. Graphene has attracted wide attention due to its excellent optical, electrical, thermal and magnetic effects. In the field of photocatalytic or photochemical material design, novel graphene based semiconductor composite is widely considered as a kind of solar energy conversion material with great application potential. In this paper, graphene coating was prepared on the surface of Mo doped BiMo_(0.03)V_(0.97)O_4 (BiMoV) photochemical thin films by constant current reduction deposition. When the deposition time of graphene is 600s, the BiMoVO/Graphene / BiMoV / G) photoanode has the best photochemical properties. The current density of the anode is 35 Ma / cm ~ (-2) when the bias voltage is 1 V, which is about 2.3 times higher than that of the pure BiMoVO photoanode. At the same time, the photoelectrode has high photochemical stability. The improvement of photochemical properties is due to the fact that the graphene coating can become the receptor of photogenerated electrons produced by BiMoVO thin films, and the photogenerated electrons on graphene can be transported to the substrate through the graphene transport channel. Thus, the separation efficiency of photogenerated electrons and holes is improved effectively, and the lifetime of photogenerated electrons is prolonged.
【学位授予单位】：青岛科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2;O646

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