硅纳米结构阵列的制备及其光学性能研究

发布时间：2018-05-17 11:24

  本文选题：纳米球刻印 + 金纳米环阵列　； 参考：《中国科学技术大学》2017年硕士论文

【摘要】：晶体硅太阳能电池由于发电成本高于传统化石能源,限制了其更大范围地推广使用。表面呈纳米结构的黑硅材料有望从两个方面解决这个问题,一方面,黑硅材料能够对很宽的光谱范围以及准全方位入射的光拥有极好的抗反射性能;另一方面,黑硅材料极好的光吸收性能使得太阳电池的厚度减少至几十微米以下时依然有很好的关吸收性能,而目前的商用晶体硅太阳能电池为了有效的吸收入射光,多采用的厚度为～300μm的硅片,硅原材料使用成本约占电池总制造成本的一半。本文中,结合纳米球刻印(NSL)和金属辅助的化学刻蚀(MACE)制备出多种纳米阵列结构的黑硅材料,并分别从计算仿真和实验结果两个方面分析其光学性能,找到拥有相对最优的抗反射性能的Si纳米阵列结构。具体研究内容主要集中在以下几个方面:(1)研究纳米球的刻蚀过程,实现非密排聚苯乙烯球直径的精确控制。然后,基于NSL,结合电子束蒸发和磁控离子溅射两项技术,在Si片表面实现Au纳米孔阵列的按需制备和Au纳米圆盘阵列的可控制备。在制备Au纳米圆盘阵列过程中发现了 Au纳米圆环阵列的制备方法,进一步研究Au纳米圆环阵列形成的各个步骤,弄清了 Au圆环阵列的形成机理,最后,制备了不同周期、尺寸大小的Au纳米圆环阵列。(2)以制备得到的Au纳米孔阵列、Au纳米圆盘阵列作为金属催化剂,采用MACE分别实现Si纳米线阵列的按需制备和Si纳米孔阵列的可控制备,分析刻蚀过程中的各个工艺参数对刻蚀结果的影响,找到优化的刻蚀工艺。然后,以Au纳米圆环阵列为刻蚀催化剂,通过MACE初步实现Si纳米孔中线阵列的制备。(3)采用时域有限差分法对不同直径的Si NWAs和Si NHAs的光学性能进行系统地仿真模拟,并将模拟仿真结果与光学性能的实验测试结果进行参照对比。结果表明长度1μm、周期483nm的有序SiNWAs,在300nm直径时的抗反射性能达到最强,而当直径为100nm时,宏观上样品表面呈深红色,FDTD的仿真结果中发现吸收光谱中波长～570nm处出现一个明显的吸收峰,这是由于Si NWAs的本征模式的共振吸收所致。长度1μm、周期483nm的有序Si NWHs,在直径400nm时光吸收率最高,与300nm直径时Si NWAs相比,其拥有更好的抗反射性能,是相比最优的抗反射纳米结构材料。
[Abstract]:Crystal silicon solar cells are more widely used because of the higher cost of generating electricity than traditional fossil energy. On the one hand, the black-silicon material has excellent anti-reflection performance for a wide spectrum range and quasi-omni-directional incident light; on the other hand, it is expected to solve this problem in two ways: the black-silicon material with nanostructured surface is expected to solve this problem in two ways. Because of the excellent optical absorption properties of black silicon materials, the solar cells still have good off absorption performance when the thickness of solar cells is reduced to less than tens of microns, while the current commercial crystalline silicon solar cells have the aim of effectively absorbing incident light. Most of the silicon wafers with thickness of 300 渭 m are used, and the cost of using silicon raw materials is about half of the total manufacturing cost of the battery. In this paper, a variety of nano-array black silicon materials were prepared by combining nanospheres engraving with metal assisted chemical etching (MACEE), and their optical properties were analyzed from two aspects of computational simulation and experimental results. The structure of Si nanoarrays with relatively optimal anti-reflection performance was found. The main contents of this study are as follows: 1) the etching process of nanospheres is studied to achieve the accurate control of the diameter of unpacked polystyrene spheres. Then, based on NSLand electron beam evaporation and magnetron ion sputtering, the au nano-porous array and the controlled fabrication of au nano-disk array are realized on the surface of Si wafer. In the process of preparing au nanometer-disk arrays, the preparation methods of au nanometer-ring arrays were found. The various steps of the formation of au nanometer-ring arrays were further studied, and the formation mechanism of au ring arrays was clarified. Finally, different cycles were prepared. Using au nanopores array as metal catalyst, MACE was used to realize the on-demand preparation of Si nanowire array and the controllable fabrication of Si nano-porous array respectively. The influence of various process parameters on the etching results is analyzed, and the optimized etching process is found. Then, using au nanometer-ring array as the etching catalyst, the fabrication of Si nano-pore midline array is preliminarily realized by MACE. The optical properties of Si NWAs and Si NHAs with different diameters are simulated systematically by using finite-difference time-domain method (FDTD). The simulation results are compared with the experimental results of optical performance. The results show that the ordered SiNWAss with a length of 1 渭 m and periodic 483nm have the strongest anti-reflex property at the diameter of 300nm, but when the diameter is 100nm, The simulation results show that there is an obvious absorption peak at 570nm in absorption spectrum, which is due to the resonance absorption of Si NWAs in intrinsic mode. The ordered Si NWHs with a length of 1 渭 m and periodic 483nm have the highest absorptivity at the time of diameter 400nm. Compared with Si NWAs at the 300nm diameter, it has better anti-reflection performance and is the best anti-reflection nanostructure material.
【学位授予单位】：中国科学技术大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O613.72;TB383.1
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本文编号：1901177