X射线光电子能谱法和深度剖析法检测CdS薄膜的成分

发布时间：2018-05-31 05:02

本文选题：X射线光电子能谱法 + 深度剖析　；参考：《理化检验(化学分册)》2017年01期

【摘要】：用X射线光电子能谱法(XPS)对化学水浴沉积法制得的硫化镉薄膜的成分进行表征和深度剖析。用能量为2×103eV的Ar+刻蚀3 800s,90层。对Cd3d、S2p和O1s的90个谱峰的高分辨图谱的分析和对谱峰的曲线拟合,得出以下结论:1除最外层和玻璃基底层以外的其他层中氧元素的质量分数都在6%左右,即CdS占94%左右;2欲获得均匀的CdS薄膜,需一次制备成型;3在形成CdS薄膜的诱发期主要是Cd2+和S2-的结合形成CdS,此时并无CdO和Cd(OH)2的形成;4由于玻璃衬底的亲水性以及氨水的分解产生的OH-形成了生成Cd(OH)2的条件,而CdO的存在主要是因为Cd(OH)2在蒸发时分解产生的;5根据半定量测定,相对于94%的CdS而言,Cd(OH)2的含量为2.7%,CdO的含量为2.2%,吸附氧的含量为1.1%。
[Abstract]:The composition of CD _ 2S film prepared by chemical water bath deposition was characterized and analyzed by X-ray photoelectron spectroscopy (XPS). The 3 800s ~ (90) layer was etched with an energy of 2 脳 103eV. By analyzing the high resolution spectra of 90 peaks of CD3dS2P and O1s and fitting the curves of the peaks, it is concluded that the mass fraction of oxygen in the other layers except the outermost layer and the glass base layer is about 6%. That is, CdS accounts for about 94% of CdS thin films. In the induction period of forming CdS films, the formation of Cd2 and S2- is mainly due to the combination of Cd2 and S2-. At this time, there is no formation of CdO and Cd(OH)2 due to the hydrophilicity of glass substrates and the formation of OH- by the decomposition of ammonia, which forms the conditions for the formation of Cd(OH)2. However, the existence of CdO is mainly due to the fact that Cd(OH)2 decomposes during evaporation. According to the semi-quantitative measurement, the content of CD ~ (2 +) O ~ (2) is 2.7% compared with 94% of CdS, and the content of adsorbed oxygen is 1.1%, compared with 2.7% of CdS, the content of CD _ (2) O _ (2) is 2.2 and the content of adsorbed oxygen is 1.1%.
【作者单位】：北京低碳清洁能源研究所分析测试中心;北京低碳清洁能源研究所太阳能研究中心;
【分类号】：TB383.2;O657.62

【相似文献】