氮化铟及二氧化锡半导体纳米材料的制备及物性研究

发布时间：2018-05-31 17:37

本文选题：氮化铟微米材料 + 二氧化锡纳米材料　；参考：《吉林大学》2017年硕士论文

【摘要】：纳米材料具有一系列特殊效应,如:小尺寸效应、量子尺寸效应和宏观量子隧道效应等,因而具有许多常规材料所不具备的性能,由此在各个应用领域都得到了广泛应用。众所周知,纳米材料的物理、化学性质依赖于其形貌、尺寸等微观结构,因此,为了很好地探究纳米材料的独特性质并且进一步拓宽纳米材料的应用领域,多种形貌、有着不同微观结构及位相的纳米材料的可控制备及研究已经成为当今材料科学领域的前沿热点。以氮化铟和二氧化锡为代表的半导体纳米材料,作为一种自然界不存在的新型半导体材料,由于有着优异的光电性质、化学稳定性好、灵敏度高等优点,在光电器件、功能材料等应用领域有着广阔的发展前景。其中,氮化铟纳米材料在室温下带隙宽度约为0.7 e V,与GaN、AlN的合金材料可以实现带隙宽度在紫外-深红外范围内可调,有着极其优异的光学性质,并为光电器件领域提供新的发展路径。本论文以氮化铟、二氧化锡纳米材料为研究对象,采用一种简单的化学气相沉积实验方法,成功制备出了具有特殊形貌的氮化铟、二氧化锡纳米材料,探究了具有特殊形貌的样品的生长机制,并对影响产物形貌和性质的因素进行了分析研究,着重讨论了氮化铟半导体纳米材料的光学性质及影响其光学性质的因素。所取得的主要结果如下:(1)采用化学气相沉积法成功制备出三维InN微米材料,即InN微米球及劈裂八面体状微米结构。对这些特殊形貌的InN微米结构的生长机制进行了讨论研究,确定两种形貌的InN样品的生长机制为自组装生长,并且分别经由两种不同的自组装过程生长而成。(2)为探究在同一实验条件下,在衬底的不同区域制备出两种不同形貌的原因,我们将CVD方法中影响产物形貌的因素结合本文所涉及实验条件进行逐一对比分析,并设计相应对比实验,确定其可能影响两种InN微米材料的因素为衬底不同区域反应物浓度不同。(3)对所制备的两种不同形貌的InN样品的光学性质进行了研究和比较,两种形貌InN样品均展现了展宽较宽的黄-橙色发光带,能带中心约为2.17 e V,远远大于InN纳米材料本征发光光学带隙理论值(~0.7 e V)。我们对其可能的影响因素进行了综合分析,认为所制备的InN样品与体材料本征带隙有较大差异,其可能由富氮的化学组分配比导致的。(4)采用化学气相沉积法成功制备一系列多种形貌的二氧化锡纳米材料,主要包括:纳米八面体、树枝状、雾凇状及不规则粒子结构的二氧化锡纳米结构,并对样品的生长机制进行了详细论述。我们设计一系列对比实验,并对最终样品进行形貌表征,以探究载气、反应温度及氧气流量等对样品形貌的影响。
[Abstract]:Nanomaterials have a series of special effects, such as small size effect, quantum size effect and macroscopic quantum tunneling effect, so they have many properties that conventional materials do not have, so they have been widely used in various fields of application. As we all know, the physical and chemical properties of nanomaterials depend on their morphology and size. Therefore, in order to explore the unique properties of nanomaterials and further expand the application fields of nanomaterials, there are many kinds of morphologies. The controlled preparation and research of nanomaterials with different microstructure and phase have become a hot spot in the field of material science. The semiconductor nanomaterials, such as indium nitride and tin dioxide, as a new type of semiconductor materials that do not exist in nature, have many advantages such as excellent photoelectric properties, good chemical stability, high sensitivity and so on. Functional materials and other applications have broad prospects for development. And provides a new development path for the field of optoelectronic devices. In this thesis, indium nitride and tin dioxide nanomaterials with special morphology were successfully prepared by a simple chemical vapor deposition method. The growth mechanism of the samples with special morphology was investigated and the factors affecting the morphology and properties of the products were analyzed. The optical properties of indium nitride semiconductor nanomaterials and the factors affecting their optical properties were emphatically discussed. The main results obtained are as follows: (1) Three-dimensional InN micron materials, i.e. InN microspheres and split octahedron micron structures, have been successfully prepared by chemical vapor deposition. The growth mechanism of InN microstructures with these special morphologies was discussed. It was determined that the growth mechanism of InN samples with two special morphologies was self-assembly growth. In order to explore the reasons why two different morphologies were prepared in different regions of the substrate under the same experimental conditions, The factors that affect the morphology of the product in CVD method are compared and analyzed one by one with the experimental conditions involved in this paper, and the corresponding comparative experiments are designed. The optical properties of two kinds of InN samples with different morphologies were studied and compared by determining that the possible factors affecting the two kinds of InN micron materials were the different concentration of reactants in different regions of the substrate. The possible influencing factors are analyzed. It is concluded that the intrinsic band gap of the prepared InN sample is quite different from that of the bulk material. A series of tin dioxide nanomaterials with a variety of morphologies were successfully prepared by chemical vapor deposition, including nano-octahedron, dendrimers, nanooctahedrons and dendrites. The nano structure of tin dioxide with rime shape and irregular particle structure is discussed in detail. The growth mechanism of the sample is discussed in detail. A series of comparative experiments were designed to characterize the morphology of the final sample to investigate the effects of carrier gas reaction temperature and oxygen flow rate on the morphology of the sample.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304.2;TB383.1

【相似文献】