高温超导长带缓冲层的缺陷分析

发布时间：2018-06-07 03:51

  本文选题：高温超导带材 + 缺陷分析　； 参考：《低温与超导》2016年10期

【摘要】：实现二代高温超导产业化的关键之一是提高良率。作者在实践中发现,影响带材良率的一个重要因素是存在于带材上的缺陷。对二代高温超导带材中缺陷的研究应该是个一个重要的课题,但是还没有见到过有关的报道,该文对带材中大量出现的典型缺陷进行SEM和EDS分析发现,发现缺陷处有大量C元素,且该C元素存在于抛光基带和缓冲隔离层之间的界面上。由此,推测缺陷产生的根源是抛光带表面的有机物污染,并得到了证实。据此,在抛光工艺中的过滤系统得到了改进,最终良率得到了提高。同时,作者认为,使用SEM-EDS对缺陷进行元素分析,是二代带材开发生产中,对带材缺陷进行快速分析的一种可行方法。
[Abstract]:One of the keys to realize the industrialization of the second generation HTS is to improve the yield. In practice, the author found that one of the most important factors affecting the strip yield is the defect on the strip. The study of defects in the second generation HTS tapes should be an important subject, but no related reports have been seen. In this paper, the SEM and EDS analysis of the typical defects in the second generation HTS tapes are carried out. It is found that there are a large number of C elements in the defects, and the C element exists on the interface between the polished baseband and the buffer isolation layer. Therefore, it is assumed that the source of defects is organic contamination on the surface of the polished tape, which has been confirmed. Therefore, the filtration system in polishing process is improved and the yield is improved. At the same time, the author thinks that SEM-EDS is a feasible method for rapid analysis of defects in the second generation strip development and production.
【作者单位】： 苏州新材料研究所有限公司;
【分类号】：TM26
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本文编号：1989641