磁控溅射与固相法制备ZnO纳米材料及其特性研究

发布时间：2018-07-02 11:37

  本文选题：磁控溅射 + 纳米氧化锌　； 参考：《吉林大学》2015年硕士论文

【摘要】：氧化锌是一种新型的直接带隙宽禁带半导体材料，禁带宽度是3.37eV，激子束缚能为60meV。氧化锌一般情况下为六方纤锌矿结构。氧化锌在紫外发光二极管、三极管、薄膜晶体管、紫外探测器、稀磁半导体、光伏器件、太阳能电池等领域有广阔的应用前景。此外制造该薄膜的原材料十分丰富，制备技术成熟，因而有效地控制了生产成本，价格低廉，且具有高稳定性。染料敏化太阳能电池由于制备工艺简单、可制作在柔性电极上，因此受到了广泛关注。氧化锌是最早应用于染料敏化太阳能电池的金属氧化物之一。 本文首先采用反应射频磁控溅射方法，，通过溅射氧化锌靶制备氧化锌薄膜，工艺参数包括温度、气体流量比和样品衬底。通过对各工艺参数的系统研究，得到了氧化锌薄膜的合成规律，分析了本工作所合成氧化锌薄膜的性质，研究了合成工艺与薄膜性质的对应关系。利用X射线衍射及原子力显微镜对薄膜进行了分析测试，并利用光致发光方法研究了薄膜的发光性质。实验表明制备的氧化锌薄膜呈现出较好的c轴择优取向生长。磁控溅射过程中温度对氧化锌薄膜结晶性具有重要影响，氩氧1比1时制备的薄膜有较好的结晶性，衬底为三氧化二铝的薄膜的结晶性能更好。 然后采用固相反应法，实验以反应温度为参数，利用光致发光方法研究了样品的发光性质和X射线衍射对样品的结构进行了分析测试。实验表明，随着热反应温度升高位于395nm处的紫外发射峰逐渐红移，红移现象表现出明显的量子尺寸效应，这也说明纳米晶氧化锌逐渐长大。随着制备温度的升高，晶态氧化锌的衍射峰逐渐增强且越来越窄，表明样品中纳米晶氧化锌组分增多且粒径逐渐增大，说明非晶氧化锌逐渐向纳米晶氧化锌转化。 最后分别用固相反应法200℃下合成的氧化锌纳米颗粒和商用氧化锌粉末通过手术刀法涂在FTO导电玻璃上，烧结成多孔氧化锌电极。制备了以ZnO为光阳极材料，N719为染料，I/I3-体系电解液以及Pt对电极然后封装的染料敏化太阳能电池。固相法合成氧化锌制备的电池效率(PCE)为1.938%；商用氧化锌粉末制备的电池效率(PCE)为0.194%。可以得出自己固相法合成氧化锌纳米材料制备的太阳能电池的光电转换效率是普通商用材料制备的太阳能电池的10倍。
[Abstract]:Zinc oxide is a new direct bandgap wide band gap semiconductor material with a band gap width of 3.37 EV and an exciton binding energy of 60 MEV. Zinc oxide is generally hexagonal wurtzite structure. Zinc oxide has a wide application prospect in ultraviolet light emitting diode, transistor, thin film transistor, ultraviolet detector, dilute magnetic semiconductor, photovoltaic device, solar cell and so on. In addition, the thin film is made of abundant raw materials and mature preparation technology, which effectively controls the production cost, low price and high stability. Dye-sensitized solar cells have attracted wide attention due to their simple preparation process and their ability to be fabricated on flexible electrodes. Zinc oxide is one of the first metal oxides used in dye-sensitized solar cells. In this paper, the reactive RF magnetron sputtering method is used to prepare ZnO thin films by sputtering zinc oxide target. The process parameters include temperature, gas flow ratio and sample substrates. The synthesis law of zinc oxide thin film was obtained through the systematic study of various technological parameters. The properties of zinc oxide thin film synthesized in this work were analyzed, and the corresponding relationship between the synthesis process and the properties of the film was studied. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the photoluminescence properties of the films. The results show that the ZnO thin films exhibit good c-axis orientation. Temperature has an important effect on the crystallinity of ZnO thin films during magnetron sputtering. The films prepared by argon and oxygen 1 have better crystallinity, and the films with Al _ 2O _ 3 substrates have better crystallization properties. Then the photoluminescence properties of the samples were studied by using the solid-state reaction method and the reaction temperature was taken as the parameter. The structure of the samples was analyzed and tested by X-ray diffraction. The experimental results show that the UV emission peak located at 395nm is redshift with the increase of the temperature of the thermal reaction, and the red-shift phenomenon shows an obvious quantum size effect, which also indicates that the nanocrystalline zinc oxide grows up gradually. With the increase of the preparation temperature, the diffraction peak of crystalline zinc oxide gradually increases and becomes narrower, indicating that the composition and particle size of nanocrystalline zinc oxide increase gradually, which indicates that amorphous zinc oxide is gradually transformed to nanocrystalline zinc oxide. Finally, ZnO nanoparticles and commercial ZnO powders synthesized at 200 鈩

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