基底旋转速度对射频溅射法制备Al掺杂ZnO薄膜结构和性能的影响（英文）

发布时间：2018-07-03 05:16

本文选题：AZO薄膜 + 射频磁控溅射　；参考：《Transactions of Nonferrous Metals Society of China》2017年09期

【摘要】：采用射频溅射法于室温在玻璃基底上制备了铝掺杂ZnO(AZO)薄膜,研究了基底旋转速度(ωS)对薄膜形态、结构、光学和电学性质的影响。扫描电子显微镜横向图片显示,通过基底旋转能够产生致密的柱状结构。原子力显微镜图像表明,基底旋转状态下形成的样品其表面颗粒比基体静止状态下的颗粒小且致密,从而导致细小的晶粒尺寸。XRD结果表明,所有薄膜均为六方纤锌矿结构,c轴择优取向且分布有拉应力。紫外可见光区平均透光率在90%以上。当ωS=0 r/min时,电阻率处于最低值(8.5×10~(-3)?·cm),载流子浓度为1.8×10~(20)cm~(-3),霍尔迁移率为4.19 cm~2/(V·s)。对于其他样品,基底旋转会引起载流子浓度和霍尔迁移率的变化,从而导致电阻率增加。结果表明:基底旋转速度对AZO薄膜的形貌、结构、光学和电学性能存在较大影响。
[Abstract]:Aluminum-doped ZnO (AZO) thin films were prepared on glass substrates by RF sputtering at room temperature. The effects of rotation velocity (蠅 S) on the morphology, structure, optical and electrical properties of the films were investigated. Scanning electron microscopy (SEM) images show that dense columnar structures can be produced by the rotation of the substrate. The atomic force microscope images show that the surface particles of the samples formed in the rotating state of the substrate are smaller and denser than those in the static state of the substrate, resulting in fine grain size. XRD results show that the surface particles are smaller and denser than those in the static state of the substrate. All the films are hexagonal wurtzite structure with preferred orientation of c axis and distribution of tensile stress. The average transmittance of ultraviolet and visible region is above 90%. The resistivity is at the lowest value (8.5 脳 10 ~ (-3)? cm), carrier concentration is 1.8 脳 10 ~ (20) cm ~ (-3) and Hall mobility is 4.19 cm~2/ (V s).) when 蠅 _ S _ (0) r/min. For other samples, substrate rotation results in changes in carrier concentration and Hall mobility, resulting in an increase in resistivity. The results show that the rotation speed of the substrate has a great influence on the morphology, structure, optical and electrical properties of AZO films.
【作者单位】： Departamento
【分类号】：TB383.2;TQ132.41

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