ZnO核壳纳米结构生长及其光电器件特性研究

发布时间：2018-07-07 14:13

本文选题：氧化锌 + 核壳纳米结构　；参考：《长春理工大学》2015年博士论文

【摘要】：本论文主要开展Zn O薄膜在原子尺度上的可控生长、同质和异质核壳纳米结构的制备及特性研究以及Zn O纳米结构的发光器件及光探测器件性质等方面的研究工作,并取得如下成果:1.采用原子层沉积开展Zn O薄膜的制备工作,研究沉积温度对Zn O薄膜生长速率、晶体结构和发光特性等方面的影响。通过不同的掺杂手段对Zn O薄膜光电性质进行调控,并以此为基础首次在有机PVP纳米纤维表沉积Zn O和Al掺杂Zn O薄膜,得到Zn O基核壳结构纳米纤维;在Zn O纳米线表面沉积Al掺杂Zn O薄膜得到同质Zn O核壳纳米线结构,利用光致发光光谱(PL)系统的对核壳纳米线结构的发光特性进行分析,通观测到由Al掺杂Zn O壳层所引起双电子卫星峰(TES),得到发光增强的原因,为Zn O核壳纳米结构光电器件研究奠定基础。2.以Si C和Ga N作为p型导电材料与Zn O构建异质结发光器件,通过Mg Zn O层的引入有效调节Zn O与p型材料的导带及价带带阶,实现对Zn O中电子载流子和p型材料中空穴载流子输运情况的调节。Mg Zn O层的引入,实现了在Si C/Zn O结构中,位于388nm的来自Zn O的电致发光(EL);在此基础上将Mg Zn O层的引入Ga N/Zn O,进一步增强Zn O一侧的电致发光,最后在Ga N/Mg Zn O/Zn O引入Zn O同质核壳结构纳米线,由于Al掺杂Zn O壳层的影响,进一步增加了Zn O中电子载流子浓度,极大的提高了此类异质结EL发光强度,相比Ga N/Zn O其发光强度提高50倍。3.利用化学浴方法(CBD)在Zn O纳米线表面沉积Zn S纳米颗粒构成Zn O/Zn S核壳纳米线结构,相比Zn O纳米线样品,该核壳纳米线材料室温PL发光强度增强了约4倍,利用PL对样品进行系统的光谱分析并研究其发光来源,发现Zn O/Zn S核壳纳米线结构的非线性系数α为0.91,同时具有与对温度的不敏感性,因此将这种发光增强归结为Zn S壳层所引入的局域态激子。此后对Zn O/Zn S核壳纳米线结构进行光响应测试,由于局域态激子的存在,有效改善了Zn O纳米线的紫外光响应特性,相比Zn O纳米线其光电流强度提高约40倍。
[Abstract]:In this thesis, the controllable growth of ZnO thin films at atomic scale, the preparation and characterization of homogeneous and heterogeneous core-shell nanostructures, and the properties of luminescent devices and photodetectors of ZnO nanostructures are studied. And achieved the following results: 1. The effects of deposition temperature on the growth rate, crystal structure and luminescence characteristics of ZnO thin films were studied. Zn O and Al doped Zn O films were deposited on the surface of organic PVP nanofibers for the first time on the basis of controlling the photoelectric properties of ZnO thin films by different doping methods. The ZnO core-shell nanofibers were obtained. Homogeneous ZnO core-shell nanowires were obtained by depositing Al doped ZnO thin films on the surface of ZnO nanowires. The photoluminescence (PL) system was used to analyze the luminescence characteristics of core-shell nanowires. The double electron satellite peaks (tes) caused by Al doped Zno O shell layer were observed and the cause of luminescence enhancement was obtained, which laid a foundation for the study of ZnO core-shell nanostructure optoelectronic devices. Using sic and gan as p-type conductive materials and Zn O, heterojunction luminescent devices were fabricated. The conduction band and valence band order of Zn O and p type materials were effectively adjusted by the introduction of mg Zn O layer. The introduction of the. Mg Zn O layer to regulate the transport of electron carriers in Zn O and hole carriers in p type materials has been realized, and in the sic / Zn O structure, Based on the electroluminescence (El) from Zno in 388nm, the electroluminescence on the Zn O side was further enhanced by introducing the mg Zn O layer into the gan / Zn O layer. Finally, the Zn O homogeneous core-shell nanowires were introduced into the gan / mg Zn O / Zn O region. Due to the influence of Al doped Zn-O shell, the electron carrier concentration in Zn-O is further increased, and the El luminescence intensity of this heterojunction is greatly increased, which is 50 times higher than that of gan / ZnO. Chemical bath method (CBD) was used to deposit ZnS nanoparticles on the surface of ZnO nanowires to form ZnO / ZnS core-shell nanowires. Compared with ZnO nanowires, the PL intensity of the core-shell nanowires was increased by about 4 times at room temperature. The PL spectra of the samples were systematically analyzed and their luminescence sources were studied. It was found that the nonlinear coefficient of ZnO / ZnS core-shell nanowires was 0.91and was insensitive to temperature. Therefore, the enhancement can be attributed to the local exciton introduced by the ZnS shell. The photoresponse of ZnO / ZnS core-shell nanowires has been tested. Due to the existence of local excitons, the UV light response of ZnO nanowires has been effectively improved, and the photocurrent intensity of ZnO nanowires has been increased by about 40 times compared with that of Zno nanowires.
【学位授予单位】：长春理工大学
【学位级别】：博士
【学位授予年份】：2015
【分类号】：TB383.1;O614.241

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