磁控溅射CrAlSiN硬质膜高温性能研究
发布时间：2018-07-14 13:40
【摘要】：CrN、CrAlN、CrAlSiN等过渡金属氮化物薄膜是应用广泛的硬质薄膜材料,由于其具有硬度高、耐磨性好、抗氧化能力强等优异的性能,在刀具、装饰材料、模具、生物、航空等方面有大量的应用。本文采用磁控溅射法制备了CrN、CrAlN、CrAlSiN三种薄膜,系统地研究了Al靶功率对CrAlN薄膜微观结构、表面形貌、化学成分及力学性能的影响,研究了Si靶功率、真空及大气热处理温度对CrAlSiN薄膜微观结构、表面形貌、化学成分及力学性能的影响。分别使用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和纳米压痕仪等设备对薄膜的表面形貌、成分、微观结构、硬度进行表征。随着Al靶功率的增大,CrAlN薄膜中Al元素含量逐渐升高,薄膜的硬度和弹性模量升高,此时薄膜(200)衍射峰增强,衍射峰峰位右移,同时薄膜表面缺陷减少,粗糙度减少,表面不断趋于致密化。随着Si靶功率的增大,CrAlSiN薄膜中Si元素含量不断增加,Cr和Al元素含量相对减少,薄膜硬度先大幅下降,后逐渐平稳,晶粒沿(200)表面能最小的方向生长。Si的加入并没有形成衍射峰,而是以Si3N4非晶形式存在晶界处而阻碍CrAlN柱状晶的生长从而细化晶粒,使薄膜晶体尺寸变小。800℃真空热处理后,CrAlSiN薄膜表面出现少量裂纹,薄膜仍保持面心立方结构,薄膜硬度和弹性模量少量下降。当真空热处理温度升到900℃和1000℃时,薄膜表面出现大量的网状裂纹,薄膜面心立方结构消失。随着真空热处理温度从800℃升高到1000℃,薄膜中的Cr,Si元素含量不断下降,Al元素含量保持稳定,相对的Fe元素含量逐渐升高。CrAlSiN薄膜在800℃时大气热处理后,薄膜基本保持面心立方结构,没有氧化峰的出现,抗氧化性能良好。1000℃大气热处理后,CrAlSiN薄膜表面已经大面积出现大尺寸晶粒,薄膜CrAlN立方结构的峰已消失,同时Cr,Al,Fe的氧化峰开始出现,薄膜整体结构崩溃。
[Abstract]:The transition metal nitride films such as CrNU, CrAlN and CrAlSiN are widely used hard film materials. Because of their excellent properties such as high hardness, good wear resistance, strong oxidation resistance and so on, they are widely used in cutting tools, decorative materials, molds, biology, etc. Aviation and other areas have a large number of applications. In this paper, three kinds of CrNU CrAlN thin films were prepared by magnetron sputtering. The effects of Al target power on the microstructure, surface morphology, chemical composition and mechanical properties of CrAlN thin films were systematically studied, and the Si target power was studied. Effects of vacuum and atmospheric heat treatment temperature on microstructure, surface morphology, chemical composition and mechanical properties of CrAlSiN thin films. The surface morphology, composition, microstructure and hardness of the films were characterized by scanning electron microscope (SEM) X-ray diffraction (XRD) and nano-indentation. With the increase of Al target power, the Al content in CrAlN film increases gradually, and the hardness and elastic modulus of the film increase. At this time, the diffraction peak of the film (200) increases, the diffraction peak shifts to the right, and the surface defect decreases and the roughness decreases. The surface tends to be densified. With the increase of Si target power, the content of Si element in CrAlSiN thin film decreases relatively, the hardness of the film decreases at first and then becomes stable. The addition of Si along the direction of the minimum surface energy of (200) does not form a diffraction peak. However, the amorphous form of Si _ 3N _ 4 exists at the grain boundary, which hinders the growth of CrAlN columnar crystals and refines the grain size. After vacuum heat treatment at .800 鈩，
本文编号：2121828
[Abstract]:The transition metal nitride films such as CrNU, CrAlN and CrAlSiN are widely used hard film materials. Because of their excellent properties such as high hardness, good wear resistance, strong oxidation resistance and so on, they are widely used in cutting tools, decorative materials, molds, biology, etc. Aviation and other areas have a large number of applications. In this paper, three kinds of CrNU CrAlN thin films were prepared by magnetron sputtering. The effects of Al target power on the microstructure, surface morphology, chemical composition and mechanical properties of CrAlN thin films were systematically studied, and the Si target power was studied. Effects of vacuum and atmospheric heat treatment temperature on microstructure, surface morphology, chemical composition and mechanical properties of CrAlSiN thin films. The surface morphology, composition, microstructure and hardness of the films were characterized by scanning electron microscope (SEM) X-ray diffraction (XRD) and nano-indentation. With the increase of Al target power, the Al content in CrAlN film increases gradually, and the hardness and elastic modulus of the film increase. At this time, the diffraction peak of the film (200) increases, the diffraction peak shifts to the right, and the surface defect decreases and the roughness decreases. The surface tends to be densified. With the increase of Si target power, the content of Si element in CrAlSiN thin film decreases relatively, the hardness of the film decreases at first and then becomes stable. The addition of Si along the direction of the minimum surface energy of (200) does not form a diffraction peak. However, the amorphous form of Si _ 3N _ 4 exists at the grain boundary, which hinders the growth of CrAlN columnar crystals and refines the grain size. After vacuum heat treatment at .800 鈩，
本文编号：2121828
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