P型和N型金刚石薄膜研究进展
发布时间：2018-07-26 13:35
【摘要】：金刚石薄膜有着高的热导率,高的介质击穿场强,高的载流子迁移率以及宽的禁带等优点,是非常理想的功能材料。掺杂使金刚石薄膜具有独特的电学和热学性能,使其在半导体领域具有广阔的应用前景,近年来成为国内外研究的热点之一。综述了金刚石薄膜P型掺杂和N型掺杂的研究现状,对金刚石薄膜N型掺杂研究中存在的问题进行了分析和探索,并对N型金刚石的前景进行了展望。
[Abstract]:Diamond films are ideal functional materials because of their high thermal conductivity, high dielectric breakdown field strength, high carrier mobility and wide bandgap. Doping makes diamond thin films have unique electrical and thermal properties, and make them have a broad application prospect in semiconductor field. In recent years, diamond films have become one of the hot research topics at home and abroad. In this paper, the research status of P type doping and N type doping of diamond films is reviewed. The problems existing in the study of N type doping of diamond films are analyzed and explored, and the prospect of N type diamond is prospected.
【作者单位】： 河南理工大学材料科学与工程学院;
【基金】：河南省教育厅重点资助(12A430010) 焦作市应用基础研究项目(212) 河南理工大学创新型科研团队支持计划资助(T2013-4)
【分类号】：TB383.2
，
本文编号：2146178
[Abstract]:Diamond films are ideal functional materials because of their high thermal conductivity, high dielectric breakdown field strength, high carrier mobility and wide bandgap. Doping makes diamond thin films have unique electrical and thermal properties, and make them have a broad application prospect in semiconductor field. In recent years, diamond films have become one of the hot research topics at home and abroad. In this paper, the research status of P type doping and N type doping of diamond films is reviewed. The problems existing in the study of N type doping of diamond films are analyzed and explored, and the prospect of N type diamond is prospected.
【作者单位】： 河南理工大学材料科学与工程学院;
【基金】：河南省教育厅重点资助(12A430010) 焦作市应用基础研究项目(212) 河南理工大学创新型科研团队支持计划资助(T2013-4)
【分类号】：TB383.2
，
本文编号：2146178
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