基于TaN薄膜的研究
发布时间：2018-07-28 12:36
【摘要】：卫星、雷达等微波通信系统中,微波负载等元器件的高频化、小型化和集成化一直都是国内外研究的热点方向;TaN薄膜因其优秀的物理化学特性而成为下一代射频及微波频域阻抗和负载的佼佼者;越来越多的研究者不断尝试把光刻工艺和薄膜沉积技术相结合,从而实现微波元器件的薄膜化、集成化。基于以上背景,本论文研究了在镍锌铁氧体基片上,TaN薄膜以及基于TaN薄膜的微波负载和集成微带隔离器的理论设计和制备工艺。探究了实验工艺参数对TaN薄膜多方面性能的影响;理论设计与软件仿真了微波集成组件,实际制备了能工作于高频段的TaN薄膜微波负载;并首次引入AlN薄膜缓冲层改善基片的表面特性和散热性能,从而有效的提高了TaN薄膜微波负载的功率性能;仿真设计并制备了微带集成隔离器,具体如下:首先,在镍锌铁氧体基片上利用直流反应磁控溅射工艺制备性能可靠优良的TaN薄膜。主要探究了溅射气压、溅射时间、N2分压、靶基距离、溅射功率等工艺因素对TaN薄膜微观相结构、方块电阻、电阻温度系数(TCR)等主要性能参数指标的影响。经过大量且系统的实验,总结规律并制定出了合适的工艺参数:在3.42×10-5-5.65×10-5Pa的背底真空度下,溅射气压在0.61-0.65Pa之间,当溅射Ar流量为50sccm,N2流量为3sccm,溅射时间1200s,靶基距离7cm,溅射功率50W,所得的薄膜方阻为46-52Ω/□,TCR绝对值为48-62ppm/℃,厚度在293nm到315nm之间。其次,在20-40GHz频率范围内,设计了尺寸为2mm×2mm×0.5mm的TaN薄膜微波负载模型,通过HFSS软件仿真并优化,得到在频率范围内电压驻波比VSWR小于1.3,回波损耗S11低于-20dB,Z实部在41-54Ω之间。结合直流磁控溅射镀膜与光刻等工艺,制备得到TaN薄膜微波负载,经测试,薄膜微波负载VSWR小于1.5,回波损耗S11小于-13dB,阻抗变化在40-70Ω,功率密度为0.91W/mm2。再者,由于镍锌铁氧体基片上制作的TaN薄膜电阻器,受到铁氧体表面及内部结构特性差以及导热系数低的影响,功率密度往往达不到实际应用的要求,实验利用中频磁控溅射,在铁氧体基片与TaN薄膜电阻器之间镀上一层1.5μm厚的AlN薄膜缓冲层,有效的改善了基片表面平整度及散热能力,从而较为显著的提高了TaN薄膜微波负载的功率性能,经测试可以达到3.76W/mm2。最后,在微带环行器场理论和Y结环行器设计理论基础上,利用HFSS软件设计并仿真了微带环行器和端接微波负载的微带集成隔离器,制作并测试了隔离器性能。在20-30GHz的仿真频率范围内,环行器回波损耗S11-15dB,插入损耗S12在-1dB左右,隔离度S21-14dB;在10-14GHz仿真频率范围内,隔离器S11-14dB,S12在-1dB左右,S21-15dB;基于理论设计和模拟结果指导,采用多次光刻和多层薄膜制备等工艺,成功制作出薄膜负载与隔离器组件,测试结果表明制作的隔离器参数为:S11-10.5dB,S12-3dB,S21-10dB,接近理论设计结果。
[Abstract]:In satellite, radar and other microwave communication systems, the high frequency of components such as microwave load, Miniaturization and integration have always been the hot research directions at home and abroad. Tan thin films have become the next generation of RF and microwave frequency domain impedance and load because of their excellent physical and chemical properties. More and more researchers try to combine lithography and thin film deposition technology to realize the thinning and integration of microwave components. Based on the above background, the theoretical design and fabrication process of tin thin film on Ni-Zn ferrite substrate and microwave loaded and integrated microstrip isolator based on TaN thin film have been studied in this paper. The effects of experimental process parameters on the properties of TaN thin films are investigated. Microwave integrated modules are designed and simulated in theory and software. Microwave loading of TaN thin films which can work in high frequency band is actually fabricated. The AlN film buffer layer is introduced to improve the surface characteristics and heat dissipation performance of the substrate for the first time, thus effectively improving the power performance of the microwave load of the TaN thin film. The microstrip integrated isolator is designed and fabricated by simulation. The main results are as follows: first, TaN thin films with good properties were prepared on Ni-Zn ferrite substrates by DC reactive magnetron sputtering. The effects of sputtering pressure, sputtering time and N _ 2 partial pressure, target distance and sputtering power on the microstructure, block resistance, resistance temperature coefficient (TCR) of TaN thin films were investigated. After a large number of systematic experiments, the rules are summarized and the appropriate technological parameters are worked out: the sputtering pressure is between 0.61-0.65Pa and 0.61-0.65Pa under the condition of 3.42 脳 10-5-5.65 脳 10-5Pa vacuum. When the ar flux is 3sccm, the sputtering time is 1200s, the target distance is 7cm, the sputtering power is 50W, the square resistance of the film is 46-52 惟 / -TCR is 48-62ppm/ 鈩，
本文编号：2150160
[Abstract]:In satellite, radar and other microwave communication systems, the high frequency of components such as microwave load, Miniaturization and integration have always been the hot research directions at home and abroad. Tan thin films have become the next generation of RF and microwave frequency domain impedance and load because of their excellent physical and chemical properties. More and more researchers try to combine lithography and thin film deposition technology to realize the thinning and integration of microwave components. Based on the above background, the theoretical design and fabrication process of tin thin film on Ni-Zn ferrite substrate and microwave loaded and integrated microstrip isolator based on TaN thin film have been studied in this paper. The effects of experimental process parameters on the properties of TaN thin films are investigated. Microwave integrated modules are designed and simulated in theory and software. Microwave loading of TaN thin films which can work in high frequency band is actually fabricated. The AlN film buffer layer is introduced to improve the surface characteristics and heat dissipation performance of the substrate for the first time, thus effectively improving the power performance of the microwave load of the TaN thin film. The microstrip integrated isolator is designed and fabricated by simulation. The main results are as follows: first, TaN thin films with good properties were prepared on Ni-Zn ferrite substrates by DC reactive magnetron sputtering. The effects of sputtering pressure, sputtering time and N _ 2 partial pressure, target distance and sputtering power on the microstructure, block resistance, resistance temperature coefficient (TCR) of TaN thin films were investigated. After a large number of systematic experiments, the rules are summarized and the appropriate technological parameters are worked out: the sputtering pressure is between 0.61-0.65Pa and 0.61-0.65Pa under the condition of 3.42 脳 10-5-5.65 脳 10-5Pa vacuum. When the ar flux is 3sccm, the sputtering time is 1200s, the target distance is 7cm, the sputtering power is 50W, the square resistance of the film is 46-52 惟 / -TCR is 48-62ppm/ 鈩，
本文编号：2150160
本文链接：https://www.wllwen.com/kejilunwen/cailiaohuaxuelunwen/2150160.html
