硫化钨纳米结构制备及光学性质研究
发布时间：2018-08-03 12:50
【摘要】：单层WS_2具有超薄的厚度、高载流子迁移率、低电阻率、高开关比等优点,在光电子器件和谷极化器件等方面具有重要的应用价值。大面积高质量的单层薄膜是开发WS_2基光电器件的重要前提。本论文针对高质量单层WS_2薄膜制备及其光学性质进行研究,取得如下结果:(1)利用低熔点钨源,以化学气相沉积法在SiO2/Si衬底上获得了高发光质量的单层2H-WS_2三角片,其629.7 nm处发光峰半峰宽为18 nm(48 me V),且通过调节反应物钨源与硫源的比例可分别获得整片均匀发光或仅边缘发光的WS_2薄膜。(2)对照研究蓝宝石和SiO_2/Si衬底对单层WS_2拉曼模式和发光位置的影响。发现两种衬底对单层WS_2存在相同的应力,但衬底表面不同的带电杂质掺杂使蓝宝衬底的单层WS_2薄膜发光峰蓝移。(3)采用溅射法制备WS_2/Au复合材料,单层WS_2及WS_2/Au复合材料光学性质的对照分析发现,直接向单层WS_2表面沉积Au颗粒会导致其发光猝灭,但可以增强层间A1g(Γ)模式的拉曼振动。
[Abstract]:Single layer WS_2 has the advantages of ultra-thin thickness, high carrier mobility, low resistivity and high switching ratio. It has important application value in optoelectronic devices and valley polarization devices. Large area and high quality monolayer film is an important prerequisite for the development of WS_2 based optoelectronic devices. In this paper, the preparation and optical properties of high quality monolayer WS_2 thin films are studied. The results are as follows: (1) monoluminescent 2H-WS_2 triangles with high luminescence quality are obtained on SiO2/Si substrate by chemical vapor deposition with low melting point tungsten source. The half-width of the luminescence peak at 629.7 nm is 18 nm (48 me V),). By adjusting the ratio of reactant tungsten source to sulfur source, we can obtain a single WS_2 thin film with uniform luminescence or edge-only luminescence, respectively. (2) the Raman spectra of single layer WS_2 on sapphire and SiO_2/Si substrates are studied. The effect of mode and luminous position. It is found that the two substrates have the same stress on the monolayer WS_2, but different charged impurity doping on the surface of the substrate results in the blue shift of the luminescence peak of the monolayer WS_2 films on the Lambo substrates. (3) the WS_2/Au composites are fabricated by sputtering. By comparing the optical properties of monolayer WS_2 and WS_2/Au composites, it is found that the deposition of au particles directly on the surface of monolayer WS_2 leads to the luminescence quenching of au particles, but it can enhance the Raman vibration of the interlaminar A1g (螕) mode.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ136.13;TB383.2
本文编号：2161799
[Abstract]:Single layer WS_2 has the advantages of ultra-thin thickness, high carrier mobility, low resistivity and high switching ratio. It has important application value in optoelectronic devices and valley polarization devices. Large area and high quality monolayer film is an important prerequisite for the development of WS_2 based optoelectronic devices. In this paper, the preparation and optical properties of high quality monolayer WS_2 thin films are studied. The results are as follows: (1) monoluminescent 2H-WS_2 triangles with high luminescence quality are obtained on SiO2/Si substrate by chemical vapor deposition with low melting point tungsten source. The half-width of the luminescence peak at 629.7 nm is 18 nm (48 me V),). By adjusting the ratio of reactant tungsten source to sulfur source, we can obtain a single WS_2 thin film with uniform luminescence or edge-only luminescence, respectively. (2) the Raman spectra of single layer WS_2 on sapphire and SiO_2/Si substrates are studied. The effect of mode and luminous position. It is found that the two substrates have the same stress on the monolayer WS_2, but different charged impurity doping on the surface of the substrate results in the blue shift of the luminescence peak of the monolayer WS_2 films on the Lambo substrates. (3) the WS_2/Au composites are fabricated by sputtering. By comparing the optical properties of monolayer WS_2 and WS_2/Au composites, it is found that the deposition of au particles directly on the surface of monolayer WS_2 leads to the luminescence quenching of au particles, but it can enhance the Raman vibration of the interlaminar A1g (螕) mode.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ136.13;TB383.2
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