低维硒化镉纳米材料物理性能预测
[Abstract]:Since its discovery, graphene has attracted more and more attention due to its unique geometric structure and excellent physical properties. The band gap of graphene with intrinsic structure is zero. Scientists applied strain to open the band gap by physical method, or doped other atoms by chemical method to obtain graphene with band gap. By changing the dimension of graphene, two dimensional graphene is cut into one dimensional graphite band to adjust its electronic structure, magnetic and optical properties. Due to the uniqueness of two-dimensional nanostructures and the problem of zero-band gap of graphene, it is a very hot research topic to find and study two-dimensional structures with non-zero band gap similar to graphene. Through the continuous efforts of scientists in recent years, graphene-like two-dimensional and one-dimensional systems have been found. As an important direct transition and wide band gap semiconductor material in the II-VI family, CdSe has unique physical and chemical properties and has been successfully used in optical amplifiers. Solar cells, photovoltaic devices, bioluminescence labeling, etc. In the past few decades, the two-dimensional structure of cadmium selenide nanocrystalline has been experimentally prepared by sol method for the thickness of 1.4nm. Although a certain thickness of CD se nanocrystals has been prepared by experiments, the optical and magnetic properties of the monolayer and one-dimensional CD se nanocrystals / nanobelts have not been studied. The main contents of this thesis are as follows: 1. Based on the first principle of density functional theory, the effect of two-dimensional cadmium selenide nanoparticles on electronic structure under uniform strain is studied. The results show that the band gap of cadmium selenide nanoparticles decreases with the increase of strain. At the same time, the effect of uniform strain on the refraction coefficient and extinction coefficient in the real, imaginary and optical constants of dielectric constant is discussed. It is found that the peak value of the imaginary part of the dielectric constant is redshift when the stress increases, and the red shift also occurs in the extinction coefficient. In addition, the reflection coefficient, absorption coefficient and energy loss coefficient of cadmium selenide nanocrystals were studied. Based on the first principle of density functional theory, the electronic structure and magnetic properties of sawtooth and armrest cadmium selenide nanoribbons at different widths and under the condition of hydrogen atom passivation and non-passivation are studied. It is found that the band gap of the armrest type cadmium selenide nanoribbons decreases monotonously with the increase of the width, and appears to be a direct band gap semiconductor. However, the zigzag cadmium selenide nanoribbons exhibit magnetic properties and metal properties. The magnetic properties of the zigzag CDs nanoribbons change to zero. 3 under hydrogen passivation. Based on the first principle of density functional theory, the effects of axial strain on the structure, electrical and magnetic properties of cadmium selenide nanoribbons are studied, and the stability of armrest and sawtooth type is investigated. It is found that the strain has a strong effect on the geometrical structure, electronic structure and magnetic properties of cadmium selenide nanoribbons. Through the analysis of binding energy, it is found that the armrest cadmium selenide nanobelts are more stable than the serrated cadmium selenide nanoliths.
【学位授予单位】:上海师范大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TB383.1
【共引文献】
相关期刊论文 前10条
1 曹钰华;崔树茂;刘轲;杨志懋;;单原子层二维碳片的独特性质与应用前景展望[J];材料导报;2008年01期
2 王伟;岳工舒;杨晓;张露;张婷;;Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p i n tunneling FETs[J];Journal of Semiconductors;2014年06期
3 樊志敏;郑玉婴;曹宁宁;张延兵;;氧化石墨烯纳米带/TPU复合材料薄膜制备及性能表征[J];功能材料;2015年03期
4 王冬尧;朱臻宇;柴逸峰;;药物分析(国外期刊)[J];分析试验室;2015年01期
5 Xiang-Fen Jiang;Qunhong Weng;Xue-Bin Wang;Xia Li;Jun Zhang;Dmitri Golberg;Yoshio Bando;;Recent Progress on Fabrications and Applications of Boron Nitride Nanomaterials:A Review[J];Journal of Materials Science & Technology;2015年06期
6 Qifang Yin;Xinghua Shi;;Energy barrier for configurational transformation of graphene nanoribbon on nanotube[J];Theoretical & Applied Mechanics Letters;2014年04期
7 廖文虎;郭俊吉;;边缘掺杂对应力作用下锯齿型石墨烯纳米带I-V特性的影响[J];湖南师范大学自然科学学报;2012年06期
8 廖文虎;郭俊吉;;扶手椅型石墨烯纳米带输运性质的应变调控——以微小应变作用为例[J];吉首大学学报(自然科学版);2012年06期
9 王伟;高健;张婷;张露;李娜;杨晓;岳工舒;;三材料线性掺杂石墨烯纳米条带场效应管性能(英文)[J];计算物理;2015年01期
10 何家洪;徐强;丁武泉;李强;;L-组氨酸-赤藓红复合膜修饰电极同时检测对苯二酚、邻苯二酚[J];环境科学;2015年04期
相关会议论文 前1条
1 张平;杨宇;孙博;赵宪庚;;钚氧化物特性的第一性原理研究进展[A];中国工程物理研究院科技年报(2012年版)[C];2012年
相关博士学位论文 前10条
1 周本胡;石墨烯及其纳米带电磁输运性质研究[D];湖南师范大学;2011年
2 谢月娥;石墨烯纳米结构电子输运的调制[D];湘潭大学;2011年
3 王春;纳米金刚石、碳纳米管、石墨烯性能的第一原理研究[D];吉林大学;2009年
4 李海东;石墨烯纳米结构中的电子输运性质[D];吉林大学;2009年
5 Francis Ngigi Kariuki;[D];吉林大学;2009年
6 屈超群;纳米锥和石墨烯性能的第一原理研究[D];吉林大学;2010年
7 袁建辉;石墨烯中的电子及其输运性质的研究[D];华中科技大学;2012年
8 王欢;还原氧化石墨烯及氧化石墨烯/ZnO复合物的制备及其光、电性能研究[D];吉林大学;2012年
9 丛杨;形变对石墨烯的电子性质及输运性质的影响[D];重庆大学;2012年
10 闫从华;低维纳米结构中微弱光电信号传输的基本物理问题[D];西南交通大学;2012年
相关硕士学位论文 前10条
1 杨琳;铁磁石墨烯结中应力可调的自旋输运[D];大连理工大学;2011年
2 张迷;石墨烯纳米条带电子输运性质的调制[D];湘潭大学;2011年
3 龚一杨;电磁调制单层石墨烯体系中的电子输运性质[D];清华大学;2010年
4 吴婷婷;基于石墨烯纳米结构的电子自旋输运性质研究[D];浙江师范大学;2011年
5 王博琳;铜镍合金为衬底化学气相沉积法制备石墨烯研究[D];南京邮电大学;2012年
6 游鸿强;Graphene体系中的隧穿效应[D];浙江大学;2012年
7 刘倩;基于单壁碳纳米管和单层石墨的有机光伏电池的研究[D];天津理工大学;2008年
8 韦勇;拉力调控下石墨烯电子性质的理论研究[D];浙江师范大学;2009年
9 孙永灿;缺陷与杂质对In在graphene上吸附影响的研究[D];河南师范大学;2009年
10 吕伟;石墨烯的低温制备及电化学性质研究[D];天津大学;2009年
,本文编号:2170212
本文链接:https://www.wllwen.com/kejilunwen/cailiaohuaxuelunwen/2170212.html