压电MEMS用PZT薄膜的外延生长及掺杂改性研究
发布时间：2018-08-20 13:51
【摘要】：近年来,随着MEMS技术的发展,市场上出现了众多的MEMS器件和产品,但是如何给MEMS器件供电成了目前需要解决的问题。压电薄膜可以实现振动能到电能的转换,这引起了人们对压电薄膜材料在环境能量收集器中应用的关注。高性能的MEMS器件对所用材料的性能和结构都有很高的要求。PZT基压电薄膜由于其优异的压电、铁电和介电性能,成为了目前能量收集MEMS应用的研究热点。本论文利用磁控溅射技术制备高质量的PZT基压电薄膜,探索薄膜的外延生长工艺并进行结构、性能表征,选择弛豫铁电体铌镍酸铅(Pb(Ni1/3Nb2/3)O3,PNN)作为固溶掺入,研究PZT-PNN体系的结构和性能随PNN含量的变化关系。利用磁控溅射技术制备了PZT(50/50)薄膜。在用传统陶瓷靶材溅射薄膜的基础上,提出了使用活性较高的粉体靶材来溅射制备PZT压电薄膜。在此基础上,在(111)Pt/Ti O2/Si O2/Si衬底上获得随机取向的多晶薄膜,并且没发现杂相。衬底温度的升高有利于提高结晶性能,获得表面平整的薄膜,但是随之继续升高导致Pb O严重挥发,降低了薄膜的压电、铁电性能。Pb O含量的增加有利于钙钛矿结构的形成,但是过高的百分比使PZT薄膜中形成了多数氧化物而影响了PZT薄膜的结构。最佳生长条件为Pb O过量10mol.%、750℃、0.6Pa、Ar/O=20/1。在单晶(001)Sr Ti O3和(001)Mg O衬底上沉积出外延性良好的薄膜。在Mg O衬底上获得具有压缩应力的外延薄膜,显示出更强的向上自发极化现象,具有明显的极化反转特性和压电响应,并且认为这种性质是由薄膜内部较大的外延压缩应力所导致的。该薄膜还具有较好的宏观铁电性能,Pr为100.1μC/cm2。利用磁控溅射技术制备了(1-x)PZT-x PNN(x=0.05,0.10,0.15)薄膜。研究发现不同PNN掺入量的样品都形成了具有钙钛矿结构的PZT-PNN固溶体系。随着PNN含量的增加,PZT-PNN薄膜的结构四方度增加。在x=0.05的薄膜结构位于该体系的准同型相界(MPB)附近,其MPB与陶瓷材料的偏差是由于内部残余应力导致的。薄膜晶粒生长均匀,表面致密平整,随着PNN含量的增加,晶粒尺寸和表面粗糙度都逐渐增大。x=0.05的薄膜显示出趋近于饱和的电滞回线和较好的介电性,剩余极化强度Pr约为99.1μC/cm2,饱和极化强度PS约为124μC/cm2,矫顽电压EC约为57.5k V/cm,介电常数为2030。压电性能测试结果表明在0.15PZT-0.05PNN薄膜中其面外极化性能较好,具有最佳的压电响应特性。
[Abstract]:In recent years, with the development of MEMS technology, there are many MEMS devices and products in the market. However, how to supply power to MEMS devices has become a problem to be solved. Piezoelectric film can realize the conversion of vibration energy to electric energy, which has attracted people's attention in the application of piezoelectric film material in environmental energy collector. High performance MEMS devices have high requirements for the properties and structures of the materials used. PZT-based piezoelectric thin films have become a hot research area in energy collection MEMS applications due to their excellent piezoelectric, ferroelectric and dielectric properties. In this paper, high quality PZT based piezoelectric thin films were prepared by magnetron sputtering technique. The epitaxial growth process, structure and properties of the thin films were investigated. The relaxor ferroelectric (Pb (Ni1/3Nb2/3) O 3 PNN) was selected as solid solution doping. The relationship between structure and properties of PZT-PNN system with PNN content was studied. PZT (50 / 50) thin films were prepared by magnetron sputtering. On the basis of the traditional ceramic target sputtering film, the PZT piezoelectric thin film was prepared by sputtering the high active powder target. On this basis, random oriented polycrystalline films were obtained on (111) Pt/Ti O2/Si O2/Si substrates, and no heterophases were found. The increase of substrate temperature can improve the crystallization property and obtain the flat surface film. However, the increasing of the substrate temperature leads to the serious volatilization of PBO and the decrease of the piezoelectric of the film. The increase of ferroelectric property. PbO content is beneficial to the formation of perovskite structure. However, too high a percentage of the PZT films formed most of the oxides, which affected the structure of the PZT films. The optimum growth conditions were as follows: PbO excess of 10 mol 路L ~ (-1) at 750 鈩，
本文编号：2193844
[Abstract]:In recent years, with the development of MEMS technology, there are many MEMS devices and products in the market. However, how to supply power to MEMS devices has become a problem to be solved. Piezoelectric film can realize the conversion of vibration energy to electric energy, which has attracted people's attention in the application of piezoelectric film material in environmental energy collector. High performance MEMS devices have high requirements for the properties and structures of the materials used. PZT-based piezoelectric thin films have become a hot research area in energy collection MEMS applications due to their excellent piezoelectric, ferroelectric and dielectric properties. In this paper, high quality PZT based piezoelectric thin films were prepared by magnetron sputtering technique. The epitaxial growth process, structure and properties of the thin films were investigated. The relaxor ferroelectric (Pb (Ni1/3Nb2/3) O 3 PNN) was selected as solid solution doping. The relationship between structure and properties of PZT-PNN system with PNN content was studied. PZT (50 / 50) thin films were prepared by magnetron sputtering. On the basis of the traditional ceramic target sputtering film, the PZT piezoelectric thin film was prepared by sputtering the high active powder target. On this basis, random oriented polycrystalline films were obtained on (111) Pt/Ti O2/Si O2/Si substrates, and no heterophases were found. The increase of substrate temperature can improve the crystallization property and obtain the flat surface film. However, the increasing of the substrate temperature leads to the serious volatilization of PBO and the decrease of the piezoelectric of the film. The increase of ferroelectric property. PbO content is beneficial to the formation of perovskite structure. However, too high a percentage of the PZT films formed most of the oxides, which affected the structure of the PZT films. The optimum growth conditions were as follows: PbO excess of 10 mol 路L ~ (-1) at 750 鈩，
本文编号：2193844
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