MFIS结构电容器的制备及其中子辐射效应研究
发布时间：2018-08-24 11:11
【摘要】：具有金属-铁电-绝缘-半导体(Metal-Ferroelectric-Insulator-Semiconductor,MFIS)结构的铁电场效应晶体管(Ferroelectric Field Effect Transistor,FeFET)因具有存储结构简单、高存储密度、低功耗、高存取速度、抗辐射和非破坏性读出等优点,被认为是下一代新型存储器的发展趋势,在未来空天飞行器上有着非常诱人的应用前景。然而空间环境是一个复杂交错的综合辐射环境,存在于空间辐射环境中的X射线、伽马射线、中子流以及?粒子等射线粒子,由于各自的电荷、质量和能量不同,它们对铁电薄膜的作用效应也不相同,造成的损伤程度也不一样。因此清晰地了解铁电场效应晶体管的抗辐射性能机理是非常有必要的。本文以MFIS型铁电场效应晶体管的原理型器件—MFIS电容为研究对象,其中绝缘层为SrTiO3(STO),铁电层为Bi3.15Nd0.85Ti3O12(BNT),通过溶胶-凝胶法制备出了Pt/BNT/STO/Si结构电容器,研究了不同注量中子辐射对Pt/BNT/STO/Si结构电容器微观结构和电学性能的影响。主要创新性研究成果如下:(1)采用溶胶-凝胶法在p-Si(100)上依次沉积了STO薄膜和BNT薄膜,镀上Pt电极后得到Pt/BNT/STO/Si结构电容的结构性能进行了测试分析。发现我们制备的STO薄膜表现出了极好的介电性能和绝缘性能。Pt/BNT/STO/Si结构在饱和时候的窗口电压可达2.5 V,漏电流密度低于10-8 A/cm2,保持时间达到了7.5 h。性能良好的Pt/BNT/STO/Si结构电容器为中子辐射实验的顺利开展奠定了基础。(2)经1.0×1015 n/cm2和1.0×1014 n/cm2注量中子辐射后,对Pt/BNT/STO/Si结构电容器的微观结构和电学性能进行了表征,对比分析了辐射前后结构与性能的变化。在晶体结构方面,注量为1.0×1015 n/cm2的中子辐射对BNT薄膜的晶体结构改变不大,辐射后依然保持铋层状钙钛矿结构;在电学性能方面,Pt/BNT/STO/Si结构电容器的存储窗口电压、漏电流密度以及保持性能均随着注量的增大而发生了不同程度的退化。分析认为中子辐射诱发的氧空位在铁电薄膜内部的迁移是导致Pt/BNT/STO/Si结构电容器性能退化的主要的原因。
[Abstract]:Ferroelectric field effect transistor (Ferroelectric Field Effect Transistor,FeFET) with metal-ferroelectric-insulation-semiconductor (Metal-Ferroelectric-Insulator-Semiconductor,MFIS) structure has the advantages of simple storage structure, high memory density, low power consumption, high access speed, radiation resistance and non-destructive readout. It is considered to be the development trend of the next generation memory, and it has a very attractive application prospect in the future. However, the space environment is a complex and interlaced integrated radiation environment. The X ray, gamma ray, neutron flow and? Due to the difference of charge, mass and energy, the effect of particles on ferroelectric thin films is different, and the damage degree is also different. Therefore, it is necessary to clearly understand the radiation resistance mechanism of ferroelectric field effect transistors. In this paper, the principle device of MFIS ferroelectric field effect transistor (MFIS) is used as the research object, in which the insulating layer is SrTiO3 (STO), ferroelectric layer and Bi3.15Nd0.85Ti3O12 (BNT), is used to fabricate the Pt/BNT/STO/Si structure capacitor by sol-gel method. The effects of neutron radiation of different Fluence on the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors were studied. The main innovative research results are as follows: (1) STO and BNT thin films were deposited on p-Si (100) by sol-gel method, and the structural properties of Pt/BNT/STO/Si structure capacitors were measured and analyzed by Pt electrode plating. It is found that the STO thin films exhibit excellent dielectric properties and insulation properties. The window voltage of PtP / BNT / STO / Si structure can reach 2.5 V, the leakage current density is less than 10-8 A / cm ~ 2, and the retention time is 7.5 h. The Pt/BNT/STO/Si capacitors with good performance have laid the foundation for the smooth development of neutron radiation experiments. (2) after neutron radiation of 1.0 脳 1015 n/cm2 and 1.0 脳 1014 n/cm2, the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors are characterized. The changes of structure and properties before and after radiation were compared and analyzed. In terms of crystal structure, neutron radiation with a flux of 1.0 脳 1015 n/cm2 has little effect on the crystal structure of BNT thin films, and remains the bismuth layered perovskite structure after radiation. Leakage current density and retention performance degenerate with the increase of flux. It is considered that the migration of oxygen vacancies induced by neutron radiation in ferroelectric thin films is the main reason for the degradation of the performance of Pt/BNT/STO/Si structure capacitors.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM53;TB383.2
本文编号：2200641
[Abstract]:Ferroelectric field effect transistor (Ferroelectric Field Effect Transistor,FeFET) with metal-ferroelectric-insulation-semiconductor (Metal-Ferroelectric-Insulator-Semiconductor,MFIS) structure has the advantages of simple storage structure, high memory density, low power consumption, high access speed, radiation resistance and non-destructive readout. It is considered to be the development trend of the next generation memory, and it has a very attractive application prospect in the future. However, the space environment is a complex and interlaced integrated radiation environment. The X ray, gamma ray, neutron flow and? Due to the difference of charge, mass and energy, the effect of particles on ferroelectric thin films is different, and the damage degree is also different. Therefore, it is necessary to clearly understand the radiation resistance mechanism of ferroelectric field effect transistors. In this paper, the principle device of MFIS ferroelectric field effect transistor (MFIS) is used as the research object, in which the insulating layer is SrTiO3 (STO), ferroelectric layer and Bi3.15Nd0.85Ti3O12 (BNT), is used to fabricate the Pt/BNT/STO/Si structure capacitor by sol-gel method. The effects of neutron radiation of different Fluence on the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors were studied. The main innovative research results are as follows: (1) STO and BNT thin films were deposited on p-Si (100) by sol-gel method, and the structural properties of Pt/BNT/STO/Si structure capacitors were measured and analyzed by Pt electrode plating. It is found that the STO thin films exhibit excellent dielectric properties and insulation properties. The window voltage of PtP / BNT / STO / Si structure can reach 2.5 V, the leakage current density is less than 10-8 A / cm ~ 2, and the retention time is 7.5 h. The Pt/BNT/STO/Si capacitors with good performance have laid the foundation for the smooth development of neutron radiation experiments. (2) after neutron radiation of 1.0 脳 1015 n/cm2 and 1.0 脳 1014 n/cm2, the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors are characterized. The changes of structure and properties before and after radiation were compared and analyzed. In terms of crystal structure, neutron radiation with a flux of 1.0 脳 1015 n/cm2 has little effect on the crystal structure of BNT thin films, and remains the bismuth layered perovskite structure after radiation. Leakage current density and retention performance degenerate with the increase of flux. It is considered that the migration of oxygen vacancies induced by neutron radiation in ferroelectric thin films is the main reason for the degradation of the performance of Pt/BNT/STO/Si structure capacitors.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM53;TB383.2
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