电子束与电阻复合蒸发制备Zr基非晶薄膜及性能表征

发布时间：2018-08-24 15:36

【摘要】：非晶合金薄膜最早是以蒸发沉积的方法被发现的,真空蒸发法制备非晶薄膜具有无需制备靶材、工艺简单、薄膜纯度高等优点。然而目前采用真空蒸发法制备非晶合金薄膜的研究工作很少。由于Zr基非晶薄膜具有良好的玻璃形成能力和热稳定性,且Zr-Cu组元是典型的二元非晶合金体系,Zr-Cu-Ga组元非晶合金薄膜的制备与研究目前并没有研究报道过。鉴于此,本文采用电子束与电阻复合蒸发法制备Zr-Cu、Zr-Cu-Ga组元非晶薄膜,其中Zr由电子束蒸发源蒸镀,Cu和Ga由电阻蒸发源蒸镀,衬底基板无冷却装置。对于Zr-Cu组元薄膜,本文研究了所制备Zr-Cu组元薄膜的玻璃形成成分范围、热稳定性以及形貌特点,且探讨了样品沉积时间对薄膜结构、热稳定性、厚度、形貌、表面粗糙度、光学性能以及电学性能的影响。结果显示,该复合蒸发镀膜技术能够方便地制备玻璃形成成分范围宽的ZrxCu100-x非晶薄膜(x=30-85at%),但没有明显的玻璃转变现象且晶化温度偏低。另外,薄膜的结构与性能对沉积时间比较敏感。随着沉积时间的延长,样品从非晶结构逐渐向非晶纳米晶复合结构转变；样品表面形貌从光滑表面逐渐向较大尺寸的“团簇”形貌转变。样品表面粗糙度和电阻率随沉积时间的延长呈减小趋势,但样品的反射率呈增大趋势。对于Zr-Cu-Ga组元薄膜,本文研究了Ga含量对Zr-Cu-Ga薄膜结构、热稳定性、形貌以及电学性能的影响。结果显示,Zr-Cu-Ga薄膜的玻璃形成成分范围相比于同组元的块体和带材非晶样品较宽。本文所获得的Zr-Cu-Ga非晶薄膜没有明显的玻璃转变现象且表面呈孤立的“颗粒状”形貌。
[Abstract]:Amorphous alloy thin films were first discovered by evaporation deposition. The preparation of amorphous films by vacuum evaporation has the advantages of no target preparation, simple process, high purity and so on. However, there is little research on the preparation of amorphous alloy thin films by vacuum evaporation. Due to the good glass forming ability and thermal stability of Zr based amorphous films, the preparation and study of Zr-Cu-Ga component amorphous alloy films have not been reported at present, and the Zr-Cu component is a typical binary amorphous alloy system. In this paper, Zr-Cu,Zr-Cu-Ga component amorphous films were prepared by the composite evaporation of electron beam and resistor, in which Zr was evaporated by electron beam evaporation source, Cu and Ga were evaporated by resistance evaporation source, and there was no cooling device on the substrate. For Zr-Cu component films, the glass composition range, thermal stability and morphology characteristics of the prepared Zr-Cu component films were studied, and the effects of sample deposition time on the structure, thermal stability, thickness, morphology, surface roughness of the films were discussed. The influence of optical properties and electrical properties. The results show that the composite evaporative coating technique can easily fabricate glass amorphous ZrxCu100-x films with a wide range of composition (x _ (30) ~ (85) at%), but there is no obvious glass transition and the crystallization temperature is on the low side. In addition, the structure and properties of the films are sensitive to deposition time. With the prolongation of deposition time, the sample changed from amorphous structure to amorphous nanocrystalline composite structure, and the surface morphology of the sample gradually changed from smooth surface to larger "cluster" morphology. The surface roughness and resistivity of the samples decreased with the increase of deposition time, but the reflectivity of the samples increased. The effects of Ga content on the structure, thermal stability, morphology and electrical properties of Zr-Cu-Ga thin films were investigated. The results show that the glass forming composition range of Zr-Cu-Ga thin film is wider than that of bulk and strip amorphous samples. The amorphous Zr-Cu-Ga films obtained in this paper have no obvious glass transition phenomenon and have isolated "granular" morphology on the surface.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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