集成孔内纳米电极的纳米孔的制备

发布时间：2018-08-31 18:55

【摘要】：纳米孔技术作为新一代单分子检测技术已经成为研究的热点。目前,制备固态纳米孔的材料和方法很多,其中主要以氮化硅材料和离子束轰击方法为主,以此种材料和方法制备出的固态纳米孔被广泛应用于DNA、 RNA、蛋自质和纳米颗粒等易位事件的研究,这就使得对直径大小可控的固态纳米孔的需求不断增加。本课题主要研究了固态纳米孔及集成孔内纳米电极纳米孔的制备与加工,并对制备的纳米孔直径进行统计分析,随后对制备的纳米孔进行了表征,并将其应用于易位事件的研究中。主要内容主要包括以下几个方面：1.利用MEMS微加工工艺和聚焦离子束(Strata FIB 201)微细加工平台制备单个固态纳米孔。首先利用标准的硅加工工艺制备形成50μm×50μm正方形大小的Si3N4自支撑膜。随后,利用聚焦离子束加工平台发出的高能Ga+离子将氮化硅悬空膜击穿,制备纳米孔。综合spot和circle两种模式,可以根据需求制备出直径60 nm以上的圆形纳米孔,对制备出的纳米孔孔径进行统计分析,发现具有较好的重复性、稳定性和一致性,并将制备的固态纳米孔应用于易位信号的检测。2.利用双束型聚焦离子束(DB-FIB)加工系统和氦离子显微镜(HIM)平台在100 nm和30 nm两种膜厚的氮化硅悬空膜上对纳米孔的制备进行优化,双束型聚焦离子束加工系统可以实现直径10～60 nm之间纳米孔的制备,氦离子显微镜可以实现了直径2-60nm之间纳米孔的制备,弥补了单束型聚焦离子束制备纳米孔的不足,完善了纳米孔孔径的范围,可以满足各类分子易位实验的研究,并为纳米电极的制备和加工提供了坚实的基础、经验和前提。3.利用MEMS微加工工艺和双束型聚焦离子束加工系统及氦离子显微镜平台制备出集成孔内纳米孔电极的纳米孔。在具有表面金线的氮化硅悬空膜上,利用双束型聚焦离子束和氦离子显微镜对50nm厚、5μm线宽的金线进行刻蚀。通过两次初步刻蚀和一次精细刻蚀后最终形成长约50 nm、宽约10 nm的纳米金线。再以PECVD蒸镀一层100nm厚的氮化硅作为绝缘层,将纳米金线覆盖,形成了“氮化硅-金-氮化硅”的三层结构。最后,利用用氦离子显微镜平台将三层结构击穿,形成直径10 nm左右的集成孔内纳米电极的纳米孔。利用微纳加工工艺和平台进行了纳米孔的制备和优化,并在此基础上制备了集成孔内纳米电极的纳米孔,以期望在未来实现横向隧穿电流的检测。
[Abstract]:As a new generation of single-molecule detection technology, nano-pore technology has become a hot spot. At present, there are many materials and methods for preparing solid nano-pores, among which silicon nitride materials and ion beam bombardment are the main methods. The solid nanoparticles prepared by this method have been widely used in the study of DNA, RNA, egg self-characterization and nanocrystalline translocation events, which makes the demand for solid-state nano-pores with controllable diameters increasing. In this paper, the preparation and processing of nano-pores in solid and integrated holes were studied, and the diameter of nano-pores was analyzed statistically. Then, the prepared nano-pores were characterized. It is applied to the study of translocation events. The main contents include the following aspects: 1. A single solid nanometer pore was prepared by using MEMS micromachining process and focused ion beam (Strata FIB 201 micromachining platform. Firstly, a 50 渭 m 脳 50 渭 m square Si3N4 self-supporting film was prepared by using the standard silicon processing technology. Then the silicon nitride suspension film was broken down by high energy Ga ion from the focused ion beam processing platform. By synthesizing the spot and circle modes, the circular nano-pores with diameter of more than 60 nm can be prepared according to the demand. The pore size of the prepared nano-pores is statistically analyzed, and it is found that the pore size is reproducible, stable and consistent. The solid nanoparticles were used to detect the translocation signal. 2. The preparation of nano-pores was optimized by using a dual-beam focused ion beam (DB-FIB) machining system and a helium ion microscope (HIM) platform on two kinds of silicon nitride suspension films with thickness of 100 nm and 30 nm. The double beam focused ion beam processing system can realize the preparation of nanometer pore between 1060 nm diameter and 1060 nm diameter. Helium ion microscope can realize the preparation of nanometer pore between diameter 2-60nm, which makes up for the shortage of single beam focused ion beam preparation. The range of pore size is improved, which can satisfy the research of various molecular translocation experiments, and provide a solid foundation for the preparation and processing of nano-electrode. The nano-hole of the nano-pore electrode in the integrated hole was prepared by using the MEMS micromachining technology, the two-beam focused ion beam machining system and the helium ion microscope platform. The gold wire with 5 渭 m width of 50nm was etched by double beam focused ion beam and helium ion microscope on the silicon nitride suspension film with surface gold wire. After two initial and one fine etching nanowires of about 50 nm, wide and about 10 nm were formed. Then a layer of 100nm thick silicon nitride was evaporated by PECVD and the nanocrystalline gold wire was covered to form a three-layer structure of "silicon nitride gold-silicon nitride". Finally, the three-layer structure was broken down by using helium ion microscope platform to form the nano-pore of the integrated pore with a diameter of about 10 nm. The preparation and optimization of nano-holes were carried out by using micro-nano machining technology and platform. On the basis of this, nano-holes of nano-electrode in integrated holes were prepared, in order to realize the detection of transverse tunneling current in the future.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;O646.54

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