基于CZTS薄膜太阳能电池板的制备及性能研究
发布时间：2018-09-04 18:09
【摘要】：CZTS(Cu_2ZnSnS_4)是由铜锌锡硫四种元素组成的一种四元化合物的半导体材料,由于其具有良好的光吸收能力,因此作为太阳能电池的吸收层材料有着良好的应用前景。本文制备了CZTS薄膜和CdS(硫化镉)薄膜,并且研究了它们的光电化学性能。本文致力于CZTS薄膜太阳能电池板的核心部位CdS/CZTS异质结的制备方法的探索并且研究了光电化学性能,开展了以下研究工作:(1)CZTS纳米粉末的制备。分别以氯化铜(CuCl_2)、氯化锌(ZnCl_2)、四氯化锡(SnCl_4)和硫脲(CH_4N_2S)为原料,以去离子水为溶剂在一定温度下搅拌后得到谈黄色的澄清溶液,通过水热法制备了CZTS粉末,最后将粉末烘干后通过马弗炉进行退火处理。用水热法在不同反应温度下制备的CZTS粉末,采用XRD、SEM、UV-Vis等设备对其进行表征测试,研究了不同温度下制备的CZTS粉末的结晶度、光吸收率等性能。(2)CZTS薄膜太阳能电池中的吸收层(CZTS薄膜)制备。将制备好的CZTS粉末加以研磨后制成CZTS浆料,然后运用丝网印刷技术制备CZTS薄膜,进行一系列退火处理后得到良好的CZTS薄膜。采用SEM、UV-Vis、电化学工作站等设备对其进行表征测试,研究发现研磨的浆料的程度、CZTS薄膜的退火温度都对其光吸收率和光电导率有着重要影响。(3)CZTS薄膜太阳能电池的缓冲层(硫化镉薄膜)的制备。采用氯化镉(CdCl_2)、氯化铵(NH_4Cl)和硫脲(CH_4N_2S)为原料,通过水浴法探讨在不同温度、pH值的条件下制备了硫化镉薄膜,后续通过马弗炉进行了不同温度的退火处理。采用XRD、SEM、UV-Vis、电化学工作站等设备对硫化镉薄膜进行表征,研究表明,在反应溶液温度为70 oC左右、溶液pH值为10时,制备出的薄膜样品进过退火后得到结晶度好、透光性好和光电导好的硫化镉薄膜。(4)本文在最后还制备出了CZTS与硫化镉的P-N结。先在刻蚀好的FTO玻璃上沉积一层均匀的硫化镉薄膜,再在硫化镉薄膜衬底上通过丝网印刷工艺制备一层CZTS薄膜,最后印上碳电极后放到马弗炉中进行一系列退火处理。用500 W的氙灯光源透过AM1.5滤光片后模拟太阳光来照射P-N结,再通过电化学工作站对P-N结进行测试表征后得到电池的一些性能参数。
[Abstract]:CZTS (Cu_2ZnSnS_4) is a quaternary compound semiconductor material composed of four elements of copper, zinc, tin and sulfur. Because of its good light absorption ability, CZTS (Cu_2ZnSnS_4) has a good application prospect as the absorbent layer of solar cells. In this paper, CZTS and CdS thin films have been prepared and their photochemical properties have been studied. In this paper, the preparation methods of CdS/CZTS heterojunction at the core of CZTS thin film solar panels are explored and the photochemical properties are studied. The following research works have been carried out: (1) preparation of CZTS nanocrystalline powders. Using copper chloride (CuCl_2), zinc chloride (ZnCl_2), tin tetrachloride (SnCl_4) and thiourea (CH_4N_2S) as raw materials and using deionized water as solvent, yellow clarification solution was prepared by hydrothermal method. Finally, the powder was dried and annealed in a muffle furnace. The CZTS powder prepared by hydrothermal method at different reaction temperature was characterized by XRD,SEM,UV-Vis and the crystallinity of CZTS powder prepared at different temperature was studied. (2) absorption layer (CZTS) in CZTS thin film solar cells. The prepared CZTS powder was ground to make CZTS paste, and then the CZTS film was prepared by screen printing technology. After a series of annealing, a good CZTS film was obtained. It was characterized by SEM,UV-Vis, electrochemical workstation. It is found that the degree of grinding slurry and annealing temperature of CZTS films have an important effect on their photoabsorption and photoconductivity. (3) preparation of buffer layer (cadmium sulfide film) for CZTS thin film solar cells. Cadmium sulfide films were prepared by water bath method using cadmium chloride (CdCl_2), ammonium chloride (NH_4Cl) and thiourea (CH_4N_2S) as raw materials. The CD _ 2S thin films were characterized by XRD,SEM,UV-Vis, electrochemical workstation. The results showed that the prepared films had good crystallinity after annealing when the reaction solution temperature was about 70 oC and the solution pH value was 10:00. (4) finally, the P-N junction between CZTS and CD _ 2S was prepared. A uniform layer of cadmium sulphide thin film was deposited on the etched FTO glass, then a layer of CZTS thin film was prepared by screen printing on the substrate of the film. Finally, the carbon electrode was printed and then placed in a muffle furnace for a series of annealing. The P-N junction was illuminated by 500W xenon lamp light source through AM1.5 filter. The P-N junction was characterized by electrochemical workstation, and some performance parameters of the battery were obtained.
【学位授予单位】：湖南工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TB383.2;TM914.4
本文编号：2222945
[Abstract]:CZTS (Cu_2ZnSnS_4) is a quaternary compound semiconductor material composed of four elements of copper, zinc, tin and sulfur. Because of its good light absorption ability, CZTS (Cu_2ZnSnS_4) has a good application prospect as the absorbent layer of solar cells. In this paper, CZTS and CdS thin films have been prepared and their photochemical properties have been studied. In this paper, the preparation methods of CdS/CZTS heterojunction at the core of CZTS thin film solar panels are explored and the photochemical properties are studied. The following research works have been carried out: (1) preparation of CZTS nanocrystalline powders. Using copper chloride (CuCl_2), zinc chloride (ZnCl_2), tin tetrachloride (SnCl_4) and thiourea (CH_4N_2S) as raw materials and using deionized water as solvent, yellow clarification solution was prepared by hydrothermal method. Finally, the powder was dried and annealed in a muffle furnace. The CZTS powder prepared by hydrothermal method at different reaction temperature was characterized by XRD,SEM,UV-Vis and the crystallinity of CZTS powder prepared at different temperature was studied. (2) absorption layer (CZTS) in CZTS thin film solar cells. The prepared CZTS powder was ground to make CZTS paste, and then the CZTS film was prepared by screen printing technology. After a series of annealing, a good CZTS film was obtained. It was characterized by SEM,UV-Vis, electrochemical workstation. It is found that the degree of grinding slurry and annealing temperature of CZTS films have an important effect on their photoabsorption and photoconductivity. (3) preparation of buffer layer (cadmium sulfide film) for CZTS thin film solar cells. Cadmium sulfide films were prepared by water bath method using cadmium chloride (CdCl_2), ammonium chloride (NH_4Cl) and thiourea (CH_4N_2S) as raw materials. The CD _ 2S thin films were characterized by XRD,SEM,UV-Vis, electrochemical workstation. The results showed that the prepared films had good crystallinity after annealing when the reaction solution temperature was about 70 oC and the solution pH value was 10:00. (4) finally, the P-N junction between CZTS and CD _ 2S was prepared. A uniform layer of cadmium sulphide thin film was deposited on the etched FTO glass, then a layer of CZTS thin film was prepared by screen printing on the substrate of the film. Finally, the carbon electrode was printed and then placed in a muffle furnace for a series of annealing. The P-N junction was illuminated by 500W xenon lamp light source through AM1.5 filter. The P-N junction was characterized by electrochemical workstation, and some performance parameters of the battery were obtained.
【学位授予单位】：湖南工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TB383.2;TM914.4
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