AZO太阳能薄膜的制备与研究

发布时间：2018-09-07 20:03

【摘要】：本文以两种方式在透明玻璃衬底上磁控溅射制备AZO薄膜,分别是Zn、Al金属靶直流溅射和氧化锌铝(97:3 wt%)陶瓷靶射频溅射,通过对薄膜进行退火处理以改善薄膜结构。分别采用X-ray Diffraction(XRD)、四探针、紫外分光光度计和扫描电子显微镜(SEM)测试薄膜的表面微观结构、结晶质量、电学性能和光学性能。主要的研究参数是氧氩比、Al含量、Ar气压强、退火时间和温度,研究分析参数变化对薄膜结构及性能的影响。实验结果表明:金属双靶直流溅射制备AZO薄膜,O_2/Ar=0.35时,薄膜的综合性能较好,透光度达到92%,电阻率是5.6×10~(-3)?.cm。其中氧气含量对薄膜的光电性能影响很大,在试验中随着氧氩比的增大(0.25-0.8范围内),薄膜的透光度由85%上升到92%,电阻率从5.6×10~(-3)?.cm增加到1.4×10-2?.cm。Al掺杂实验表明,Al掺杂量对AZO薄膜的光学性能影响不大,所有样品的透射率均在85%以上,但Al掺杂量对薄膜的结晶质量和导电性能有显著的影响。当Al掺杂量Wt(Al)=1.2%时,AZO薄膜晶粒尺寸最大,结晶性能较好。当Al掺杂量Wt(Al)=1.4%时,电阻率最低,达到4.2×10~(-3)?.cm。退火处理对薄膜的导电性能有改善作用。合适的退火处理能使薄膜产生再结晶而导致晶粒细化,薄膜结晶情况得到改善,从而使薄膜光电性能均得到提高。在实验温度范围内,退火温度越高,薄膜的光电性能越好,退火时间长短也对薄膜性能有较大影响。本实验中,金属靶溅射制备的AZO薄膜在退火温度为450℃、时间1-2h时,光电性能较佳,透射率和电阻率分别为:92%和33.6 10.cm-′?。陶瓷靶射频溅射制备AZO薄膜,溅射过程通氧有利于氧粒子充分与锌结合,提高AZO薄膜的光学性能。本实验条件下,陶瓷靶通氧溅射制备的薄膜,其透射率均比较高,达到93%;在不通氧的情况下,透射率也达到90%,薄膜电阻率最低,达到33.2 10.cm-W′,综合性能最佳。氩气压强是影响AZO薄膜电学性能的重要因素,在不通氧的情况下,随着氩气压强的升高,从0.1Pa加压到1.5Pa,(002)衍射峰强度越来越小,电阻率逐渐增大,而对透光度无明显的影响。退火处理对陶瓷靶制备的AZO薄膜也有较大的影响,和退火处理对金属靶溅射制备AZO薄膜的作用相似,本实验中,当退火温度在420℃、时间1h,光电性能较佳。
[Abstract]:In this paper, AZO thin films were prepared by magnetron sputtering on transparent glass substrates, namely Zn,Al metal target DC sputtering and zinc aluminum oxide (97:3 wt%) ceramic target RF sputtering. The films were annealed to improve the structure of the films. The surface microstructure, crystallization quality, electrical properties and optical properties of the films were measured by X-ray Diffraction (XRD), four-probe, UV spectrophotometer and scanning electron microscope (SEM) (SEM), respectively. The main parameters are ar pressure, annealing time and temperature. The influence of the parameters on the structure and properties of the films is studied. The experimental results show that when AZO thin films are prepared by metal double target DC sputtering, the comprehensive properties of the films are better, the transmittance is up to 92and the resistivity is 5.6 脳 10 ~ (-3) 路cm ~ (-1). The oxygen content has a great influence on the photoelectric properties of the film. With the increase of oxygen / argon ratio (0.25-0.8), the transmittance of the films increases from 85% to 922%, and the resistivity increases from 5.6 脳 10 ~ (-3) to 1.4 脳 10-2?.cm.Al doping. The results show that the doped amount of Al has little effect on the optical properties of AZO films, and the transmittance of all samples is more than 85%. However, the amount of Al doping has a significant effect on the crystalline quality and conductivity of the films. When the doping amount of Al is Wt (Al) = 1.2, the crystal size of AZO film is the largest and the crystalline property is better. When the doping amount of Al is Wt (Al) = 1.4, the resistivity is the lowest, reaching 4.2 脳 10 ~ (-3) ~ (-3) 路cm ~ (-1). Annealing treatment can improve the conductivity of the film. Proper annealing treatment can result in recrystallization of the films, resulting in grain refinement, and the improvement of the crystallization of the films, thus improving the photoelectric properties of the films. In the range of experimental temperature, the higher the annealing temperature is, the better the photoelectric properties of the films are, and the length of annealing time has a great influence on the properties of the films. In this experiment, the AZO thin films prepared by metal target sputtering have better photoelectric properties at annealing temperature of 450 鈩，

本文编号：2229279