有机气相沉积法制备酞菁钴纳米材料及其光学性质的研究
发布时间:2018-09-08 14:08
【摘要】:酞菁钴(CoPe)是一种18π电子大杂环共轭体系的有机小分子半导体材料,由于同质多晶性,具有许多的光电和磁学性质,在有机光伏器件、OLED器件和有机场效应晶体管器件有诸多的应用潜力。有机气相沉积法是制备酞菁纳米材料的重要方法之一。 本论文的主要工作是研究CoPe纳米材料与有机气相沉积实验参数之间的关系,并表征CoPc纳米材料的光学性质。在实验过程中,通过调控沉积参数,如温度场、载气流量、温度梯度、衬底材料和沉积时间等制备CoPe纳米线。在大量的实验工作之后,确定了CoPe纳米线最佳的有机气相沉积实验参数:载气流量为400sccm,沉积腔室保持为常压,源材料加热到450℃。 CoPe纳米线具有新的物相,直径在50-60nm的范围内。CoPe纳米线在空气中非常稳定;但在溶液中,它的形貌特征会发生显著的变化。衬底材料以及衬底表面的粗糙度对CoPe纳米线的生长没有影响。XRD研究表明:CoPe纳米线有一种新的物相,命名为J-CoPc。J-CoPc纳米线的FTIR和UV-Visible吸收光谱不同于其他晶型的CoPc。J-CoPc的特征红外吸收峰位于731.33cm-1、777.94cm-1和914.38cm-1处。J-CoPc的吸收峰在B带位于310nm;在Q带有两个吸收峰,分别位于600nm和730nm。
[Abstract]:Cobalt phthalocyanine (CoPe) is a small organic semiconductor material with 18pi electron heterocyclic conjugated system. Because of its homogeneous polycrystallinity, CoPe has many photoelectric and magnetic properties. It has many potential applications in organic photovoltaic devices, OLED devices and airport effect transistor devices. One of the laws.
The main work of this dissertation is to study the relationship between CoPe nanomaterials and experimental parameters of organic vapor deposition and characterize the optical properties of CoPc nanomaterials.During the experiment, CoPe nanowires were prepared by controlling deposition parameters such as temperature field, carrier gas flow, temperature gradient, substrate material and deposition time. Then, the optimum parameters of organic vapor deposition of CoPE nanowires were determined: carrier gas flow was 400 sccm, deposition chamber was kept at normal pressure, and source material was heated to 450 C.
CoPe nanowires have new phases with diameters ranging from 50 nm to 60 nm. CoPe nanowires are very stable in air, but their morphology changes dramatically in solution. The substrate materials and the roughness of the substrate surface have no effect on the growth of CoPe nanowires. XRD studies show that CoPe nanowires have a new phase, named after. The FTIR and UV-Visible absorption spectra of J-CoPc.J-CoPc nanowires are different from those of other crystalline CoPc.J-CoPc nanowires. The characteristic infrared absorption peaks of J-CoPc nanowires are located at 731.33 cm-1,777.94 cm-1 and 914.38 cm-1. The absorption peaks of J-CoPc nanowires are located at 310 nm in B band and at 600 nm and 730 nm in Q band, respectively.
【学位授予单位】:云南大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TB383.1
本文编号:2230748
[Abstract]:Cobalt phthalocyanine (CoPe) is a small organic semiconductor material with 18pi electron heterocyclic conjugated system. Because of its homogeneous polycrystallinity, CoPe has many photoelectric and magnetic properties. It has many potential applications in organic photovoltaic devices, OLED devices and airport effect transistor devices. One of the laws.
The main work of this dissertation is to study the relationship between CoPe nanomaterials and experimental parameters of organic vapor deposition and characterize the optical properties of CoPc nanomaterials.During the experiment, CoPe nanowires were prepared by controlling deposition parameters such as temperature field, carrier gas flow, temperature gradient, substrate material and deposition time. Then, the optimum parameters of organic vapor deposition of CoPE nanowires were determined: carrier gas flow was 400 sccm, deposition chamber was kept at normal pressure, and source material was heated to 450 C.
CoPe nanowires have new phases with diameters ranging from 50 nm to 60 nm. CoPe nanowires are very stable in air, but their morphology changes dramatically in solution. The substrate materials and the roughness of the substrate surface have no effect on the growth of CoPe nanowires. XRD studies show that CoPe nanowires have a new phase, named after. The FTIR and UV-Visible absorption spectra of J-CoPc.J-CoPc nanowires are different from those of other crystalline CoPc.J-CoPc nanowires. The characteristic infrared absorption peaks of J-CoPc nanowires are located at 731.33 cm-1,777.94 cm-1 and 914.38 cm-1. The absorption peaks of J-CoPc nanowires are located at 310 nm in B band and at 600 nm and 730 nm in Q band, respectively.
【学位授予单位】:云南大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TB383.1
【参考文献】
相关期刊论文 前7条
1 李国栋;陈文彬;赵启义;芮大为;;有机气相沉积中薄膜厚度分布的模拟研究[J];电子器件;2011年05期
2 李群祥,武晓君,李斌,杨金龙,侯建国,朱清时;钴酞菁分子结中电子输运性质的理论研究[J];电子显微学报;2003年03期
3 王中良;李亚楠;张晓宏;欧雪梅;赵伟明;;物理气相沉积法制备一维有机半导体纳米材料[J];影像科学与光化学;2010年05期
4 陈文彬;李国栋;胡琛;闫思家;芮大为;赵启义;;有机气相沉积中薄膜生长的模拟研究[J];功能材料;2012年01期
5 于长华,段武彪,陈鹏刚,历荣,田国辉,刘宝珠;利用SEM对钛菁钴的晶型特性及其转变的研究[J];电子显微学报;2003年06期
6 朱建国;朱晓红;焦锐;王英;;苯酐-尿素法合成酞菁钴及其红外、紫外光谱测定[J];新疆师范大学学报(自然科学版);2006年01期
7 姜翠宁;黄启耀;;OVPD技术在OLED蒸镀装置中的应用[J];真空与低温;2007年03期
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