Cu-Zn-Sn硫族化物薄膜吸收层的共溅射制备工艺及性能研究
发布时间：2018-10-08 20:07
【摘要】：当前Cu-Zn-Sn-硫族化物薄膜太阳能电池因其突出的优点(直接带隙约1.45-1.51eV、光吸收系数高约104cm-1、无毒、矿源丰富、价格便宜和环境友好),近年来成为可再生能源领域研究的热点。本文以Cu-Zn-Sn-硫族化物为研究对象,采用磁控共溅射法制备了Cu2ZnSnS4 (CZTS)薄膜材料,并利用高温硒化工艺制备了Cu2ZnSn(SSe)4 (CZTSSe)薄膜吸收层材料,评估了它们作为薄膜太阳电池吸收层的光电性能。首先,利用共溅射法制备Cu-Zn-Sn-S预制层,并高温退火制备Cu2ZnSnS4 (CZTS)薄膜。研究制备工艺条件对薄膜性能的影响。结果表明,样品光学带隙随退火温度升高而减小,且随着退火温度升高,衍射峰强度逐渐增加,薄膜沿(112)方向择优生长。ZnS、SnS、Cu2S靶材溅射功率分别为60、15、20W,退火温度为540℃,溅射时间20min,使用上述工艺可制得贫铜富锌结构CZTS吸收层,薄膜成相较好,可见光范围内的吸收系数大于104cm-1,颗粒均匀致密,光学带隙为1.5eV。为进一步优化CZTS薄膜的性能,用固体Se粉作为硒源,采用高温硒化Cu-Zn-Sn-S预制层,制得贫铜富锌结构的Cu2ZnSn(S, Se)4薄膜。研究了高温硒化工艺条件对CZTSSe薄膜性能的影响。结果表明,硒化后CZTSSe薄膜的光学带隙与CZTS薄膜相比较小,表面均匀性好且更加致密。并且随着硒化工艺中硒粉量的增加,光学带隙逐渐减小,当硒粉量分别为0.002、0.004、0.006和0.008g时,对应的光学带隙分别为1.20、1.18、1.16和1.13eV。并且薄膜在紫外可见光范围内有较好的光吸收性能,吸收系数都达到5*104cm-1以上。
[Abstract]:At present, Cu-Zn-Sn- thin film solar cells have become a hotspot in the field of renewable energy due to their outstanding advantages (direct band gap is about 1.45-1.51eV, light absorption coefficient is about 104cm-1, non-toxic, rich in mineral resources, cheap and environmentally friendly). In this paper, Cu2ZnSnS4 (CZTS) thin films were prepared by magnetron co-sputtering, and Cu2ZnSn (SSe) 4 (CZTSSe) thin film absorbers were prepared by high temperature selenization. The optical and electrical properties of Cu2ZnSn (SSe) 4 (CZTSSe) thin films were evaluated. Firstly, Cu-Zn-Sn-S prefabricated layer was prepared by co-sputtering and Cu2ZnSnS4 (CZTS) thin films were prepared by high temperature annealing. The effects of preparation conditions on the properties of the films were studied. The results show that the optical band gap decreases with the increase of annealing temperature, and the diffraction peak intensity increases with the increase of annealing temperature. The sputtering power and annealing temperature of the films are 601520W and 540 鈩，
本文编号：2258100
[Abstract]:At present, Cu-Zn-Sn- thin film solar cells have become a hotspot in the field of renewable energy due to their outstanding advantages (direct band gap is about 1.45-1.51eV, light absorption coefficient is about 104cm-1, non-toxic, rich in mineral resources, cheap and environmentally friendly). In this paper, Cu2ZnSnS4 (CZTS) thin films were prepared by magnetron co-sputtering, and Cu2ZnSn (SSe) 4 (CZTSSe) thin film absorbers were prepared by high temperature selenization. The optical and electrical properties of Cu2ZnSn (SSe) 4 (CZTSSe) thin films were evaluated. Firstly, Cu-Zn-Sn-S prefabricated layer was prepared by co-sputtering and Cu2ZnSnS4 (CZTS) thin films were prepared by high temperature annealing. The effects of preparation conditions on the properties of the films were studied. The results show that the optical band gap decreases with the increase of annealing temperature, and the diffraction peak intensity increases with the increase of annealing temperature. The sputtering power and annealing temperature of the films are 601520W and 540 鈩，
本文编号：2258100
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