水浴法制备ZnO微纳米结构

发布时间：2018-10-10 07:13

【摘要】：纳米材料具有一些不同于体材料的物理特性和化学特性,使纳米材料成为当今时代最有前途的材料。Zn O是II-VI族金属氧化物,是一种宽禁带直接带隙半导体材料,带隙为3.37e V,且相对于其他宽禁带的半导体材料,Zn O具有高的激子结合能,室温下为60me V。Zn O具有n型导电特性,因此Zn O经常被应用在光电领域,Zn O微纳米结构还具有优异的阴极场发射性能和光催化性能。Zn O微纳米结构的制备方法众多,但有些方法对仪器设备的要求较高,且对Zn O微纳米结构生长的可控性不强。本文针对Zn O微纳米结构可控性生长的问题,采用简单的化学水浴法生长Zn O微纳米结构。本文的具体内容如下:(1)采用多容器法在水浴温度不同的条件下研究Zn O微纳米结构生长过程中产物的形貌,及其退火对其形貌和结晶质量的影响。结果显示,水浴温度不同时,其产物的形貌不同;退火后,其产物结晶质量变好。(2)使用不同的锌源和碱源制备Zn O微纳米结构,结果显示,当锌源和碱源不同时,所制备Zn O微纳米结构的形貌不同。采用水浴法制备了Zn O-Cu2O微纳米结构,并研究了Cu2O的量对其光致发光谱的影响。采用水浴法制备了Zn1-xCuxO(x=0、0.05、0.1)、Zn1-xMgxO(x=0、0.05、0.1)、Zn1-xFexO(x=0、0.05、0.1)微纳米结构,且研究了掺杂量对其光致发光谱和拉曼振动峰及其颗粒尺寸的影响。(3)采用种子法和水浴法两步生长Zn O纳米棒,种子由提拉法和滴沾法两种方法制备。通过提拉法成功制备了Zn O纳米棒阵列的微条带,纳米棒的直径约为100-200nm,长度约为300-500nm,且微条带的中间部位纳米棒取向较一致,边缘部位取向较杂乱。采用滴沾法成功制备了簇状Zn O纳米棒、Zn O纳米管及以大纳米棒为基的小Zn O纳米棒,纳米棒的直径约为100nm,PL谱显示只有本征发光峰。
[Abstract]:Nanomaterials have some physical and chemical properties different from bulk materials, which make nanomaterials become the most promising materials in the present era. ZnO is a II-VI group metal oxide, and it is a wide band gap semiconductor material. The band gap is 3.37e V, and the band gap is 3.37e V. Therefore, Zn O is often used in the field of photoelectricity, and it also has excellent cathodic field emission and photocatalytic properties. There are many methods for preparing Zno microstructures, but some of them have high requirements for instruments and equipments. And the growth of Zn O microstructures is not controllable. In order to solve the problem of controllable growth of Zn O microstructures, Zn O microstructures were grown by a simple chemical water bath method. The main contents of this paper are as follows: (1) the morphology of Zn O microstructures and the effect of annealing on the morphology and crystallization quality of Zn O microstructures were studied by multi-vessel method under different water bath temperatures. The results showed that the morphology of the product was different with the water bath temperature, and the crystallization quality of the product became better after annealing. (2) Zn O microstructures were prepared by using different zinc and alkali sources. The results showed that when the zinc source and alkali source were different, The morphology of Zn O microstructures was different. Zn O-Cu2O microstructures were prepared by water bath method, and the effect of the amount of Cu2O on the photoluminescence spectra was studied. The Zn1-xMgxO (xOOOOO0.05xO) Zn1-xFexO (xOOOFexO) microstructures were prepared by water bath method, and the effects of doping amount on the photoluminescence spectrum, Raman vibration peak and particle size of Zn O nanorods were studied. (3) the Zn O nanorods were grown in two steps by seed method and water bath method. The seeds were prepared by two methods: Czochralski method and dripping method. The microstrip of Zn O nanorod array was successfully prepared by Czochralski method. The diameter and length of the nanorods were about 100-200 nm and 300-500 nm respectively. Cluster Zn O nanorods and small Zn O nanorods based on large nanorods were successfully prepared by trickling method. The diameter of nanorods was about 100 nm PL spectra showed that only intrinsic luminescence peaks were observed.
【学位授予单位】：郑州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;O614.241

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