CIAS薄膜太阳电池吸收层制备和性能研究
发布时间：2018-10-10 10:26
【摘要】：能源危机和环境污染问题日趋严重极大地促进了光伏产业的发展。太阳能作为新型的、最具发展潜力的可再生能源之一可以有效地解决这两大问题。开发太阳能资源的新技术—太阳电池的研究成为了光伏界的热点。吸收层是太阳电池的核心部件。黄铜矿晶体结构的CuInSe2(CIS)半导体薄膜以其转化效率高、抗辐射能力强、稳定性好等特点备受研究者关注。本文通过掺杂Al元素部分替代In,制备CIAS薄膜作为CIAS薄膜太阳电池的吸收层,降低了成本。改变薄膜组分中Al元素的含量,调节禁带宽度,与太阳光谱更好的配合。本实验采用真空蒸发法在普通玻璃基底上制备了CIAS薄膜,并结合真空硒化退火进行处理。重点研究了掺杂元素Al含量、退火温度及退火时间对CIAS薄膜结构和性能的影响。分别采用X射线衍射、扫描电子显微镜、EDS能谱仪、台阶仪、霍尔效应仪、紫外—可见—近红外分光光度计对CIAS薄膜的结构、形貌、成分、厚度及光电性能进行了分析研究。结果表明:真空热蒸发制备的CIAS薄膜结晶性都很完整,呈现出黄铜矿晶体结构,并且以(112)晶面优先生长。Al部分替代了CIS晶格中的In,减小了面间距。CIAS薄膜导电类型为P型,载流子浓度达到1020数量级。随着Al含量的减少,CIAS薄膜表现出颗粒大小均匀、界限分明、致密的结构特征。对沉积态的CuIn1-xAlxSe2薄膜进行真空硒化退火,选取350~550℃作为退火温度,实验中发现,退火有助于Cu、In、Al、Se原子在薄膜内部的迁移、扩散及相互结合。450℃退火后的薄膜成分更接近理想配比,光电性能适于作为光伏电池的吸收层。以450℃作为退火温度,改变退火时间,结果表明,随着退火时间的增加,薄膜的颗粒尺寸增大,电阻率表现出先增大后减小的趋势,载流子浓度和迁移率则相反,除了退火时间为2h的薄膜试样外薄膜禁带宽度逐渐增大。通过对比,退火温度为450℃,退火时间为1h的CuIn0.7Al0.3Se2薄膜更适合作为CIAS薄膜太阳电池的吸收层。
[Abstract]:Energy crisis and environmental pollution have greatly promoted the development of photovoltaic industry. Solar energy, as one of the new and most promising renewable energy sources, can effectively solve these two problems. The research of solar cells, a new technology for developing solar energy resources, has become a hot spot in photovoltaic field. Absorption layer is the core component of solar cell. Chalcopyrite crystal structure CuInSe2 (CIS) semiconductor thin films have attracted much attention because of their high conversion efficiency, strong radiation resistance and good stability. In this paper, CIAS thin films were prepared by doping Al elements partly instead of In, as the absorption layer of CIAS thin film solar cells, and the cost was reduced. The content of Al in the film is changed, the band gap is adjusted, and the solar spectrum is better coordinated. In this paper, CIAS thin films were prepared on ordinary glass substrates by vacuum evaporation, and were treated by vacuum selenization annealing. The effects of doping element Al content, annealing temperature and annealing time on the structure and properties of CIAS thin films were studied. The structure, morphology, composition, thickness and optoelectronic properties of CIAS thin films were studied by X-ray diffraction, scanning electron microscope (SEM) EDS spectrometer, step spectrometer, Hall effect instrument and UV-Vis near infrared spectrophotometer. The results show that the crystalline properties of CIAS thin films prepared by vacuum thermal evaporation are very complete, showing chalcopyrite crystal structure, and the (112) crystal plane preferential growth. Al partially replaces the In, in the CIS lattice to reduce the interplanar spacing. The conductive type of CIAS thin films is P type. The carrier concentration reaches 1020 orders of magnitude. With the decrease of Al content, the thin films exhibit uniform particle size, clear boundaries and dense structure. The deposited CuIn1-xAlxSe2 thin films were annealed by vacuum selenation, and 350 ~ 550 鈩，
本文编号：2261431
[Abstract]:Energy crisis and environmental pollution have greatly promoted the development of photovoltaic industry. Solar energy, as one of the new and most promising renewable energy sources, can effectively solve these two problems. The research of solar cells, a new technology for developing solar energy resources, has become a hot spot in photovoltaic field. Absorption layer is the core component of solar cell. Chalcopyrite crystal structure CuInSe2 (CIS) semiconductor thin films have attracted much attention because of their high conversion efficiency, strong radiation resistance and good stability. In this paper, CIAS thin films were prepared by doping Al elements partly instead of In, as the absorption layer of CIAS thin film solar cells, and the cost was reduced. The content of Al in the film is changed, the band gap is adjusted, and the solar spectrum is better coordinated. In this paper, CIAS thin films were prepared on ordinary glass substrates by vacuum evaporation, and were treated by vacuum selenization annealing. The effects of doping element Al content, annealing temperature and annealing time on the structure and properties of CIAS thin films were studied. The structure, morphology, composition, thickness and optoelectronic properties of CIAS thin films were studied by X-ray diffraction, scanning electron microscope (SEM) EDS spectrometer, step spectrometer, Hall effect instrument and UV-Vis near infrared spectrophotometer. The results show that the crystalline properties of CIAS thin films prepared by vacuum thermal evaporation are very complete, showing chalcopyrite crystal structure, and the (112) crystal plane preferential growth. Al partially replaces the In, in the CIS lattice to reduce the interplanar spacing. The conductive type of CIAS thin films is P type. The carrier concentration reaches 1020 orders of magnitude. With the decrease of Al content, the thin films exhibit uniform particle size, clear boundaries and dense structure. The deposited CuIn1-xAlxSe2 thin films were annealed by vacuum selenation, and 350 ~ 550 鈩，
本文编号：2261431
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