ALD法制备AZO薄膜及光电性质研究
发布时间：2018-11-02 10:04
【摘要】：氧化锌作为一种宽禁带半导体材料,近年来受到广泛的关注。和ITO相比,氧化锌具有廉价,无毒,在空气中更加稳定的特性。氧化锌n型导电薄膜可进行铝,镓,铟等三价原子的掺杂。在这些元素中,铝掺杂的氧化锌由于其在可见光和近红外区良好的透光性和低电阻率被认为有可能作为光电器件的电极。到目前为止,根据我们所了解到的,AZO薄膜已经用在了有机发光二极管和太阳能电池中,但是还没应用在有机近红外探测器中。由于原子层沉积法具有简单而精确的厚度控制,大面积,大批量,良好的保型性和再现性的能力,使得其成为一种有效的半导体薄膜沉积技术。原子层沉积法生产的薄膜通常是致密的且无空隙的,并且具有良好的衬底适应性。最近通过原子层沉积生长的铝掺杂的氧化锌薄膜的电阻率可以达到10-4??cm。本文中,我们以二乙基锌,三甲基铝作为氧化锌和三氧化二铝的金属前躯体,水作为氧源,在衬底透明衬底上用原子层沉积的方法制备了Al含量分别为1%,2%,3%的AZO薄膜以及ZnO薄膜,通过XRD,霍尔测试,扫描电子显微镜以及光致发光等测试手段对制备的样品进行表征。分析其光电性能,更为重要的是,我们成功的在沉积的AZO薄膜上制造了有机近红外探测器,证实了所制备的AZO薄膜是一种有可能够取代ITO薄膜的透明导电材料。
[Abstract]:As a wide band gap semiconductor material, zinc oxide has attracted wide attention in recent years. Compared with ITO, zinc oxide is cheap, non-toxic and more stable in air. Zinc oxide n-type conductive film can be doped with aluminum, gallium, indium and other trivalent atoms. Among these elements, aluminum doped zinc oxide is considered to be an electrode for optoelectronic devices due to its good transmittance and low resistivity in the visible and near infrared region. So far, according to our understanding, AZO thin films have been used in organic light emitting diodes and solar cells, but not in organic near infrared detectors. Because of its simple and accurate thickness control, large area, large quantity, good shape preservation and reproducibility, atomic layer deposition method has become an effective semiconductor thin film deposition technology. The films produced by atomic layer deposition are usually compact, void free and have good substrate adaptability. The resistivity of Al-doped zinc oxide films grown by atomic layer deposition can reach 10 ~ (-4) cm ~ (-1). In this paper, diethyl zinc, trimethyl aluminum as the metal precursor of zinc oxide and aluminum trioxide, water as oxygen source, the content of Al prepared by atomic layer deposition on transparent substrates is 1 and 2, respectively. 3% of AZO and ZnO films were characterized by XRD, Hall test, scanning electron microscope and photoluminescence. More importantly, we successfully fabricate the organic near infrared detector on the deposited AZO thin film, which proves that the prepared AZO film is a kind of transparent conductive material which can replace the ITO film.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.21;TB383.2
本文编号：2305713
[Abstract]:As a wide band gap semiconductor material, zinc oxide has attracted wide attention in recent years. Compared with ITO, zinc oxide is cheap, non-toxic and more stable in air. Zinc oxide n-type conductive film can be doped with aluminum, gallium, indium and other trivalent atoms. Among these elements, aluminum doped zinc oxide is considered to be an electrode for optoelectronic devices due to its good transmittance and low resistivity in the visible and near infrared region. So far, according to our understanding, AZO thin films have been used in organic light emitting diodes and solar cells, but not in organic near infrared detectors. Because of its simple and accurate thickness control, large area, large quantity, good shape preservation and reproducibility, atomic layer deposition method has become an effective semiconductor thin film deposition technology. The films produced by atomic layer deposition are usually compact, void free and have good substrate adaptability. The resistivity of Al-doped zinc oxide films grown by atomic layer deposition can reach 10 ~ (-4) cm ~ (-1). In this paper, diethyl zinc, trimethyl aluminum as the metal precursor of zinc oxide and aluminum trioxide, water as oxygen source, the content of Al prepared by atomic layer deposition on transparent substrates is 1 and 2, respectively. 3% of AZO and ZnO films were characterized by XRD, Hall test, scanning electron microscope and photoluminescence. More importantly, we successfully fabricate the organic near infrared detector on the deposited AZO thin film, which proves that the prepared AZO film is a kind of transparent conductive material which can replace the ITO film.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.21;TB383.2
【共引文献】
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，本文编号：2305713
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