GaN纳米材料的制备、掺杂及发光性能研究
发布时间：2018-11-08 08:16
【摘要】：半导体纳米材料由于其特有的光电性能,且在未来器件小型化发展趋势方面具有潜在的应用价值,因而一直是纳米材料科学中的研究热点。作为一种重要的宽禁带半导体材料,Ga N纳米材料的可控制备、发光性能以及能带结构中深能级行为一直是研究的热点问题。同时,最近的研究发现,Ga N基纳米材料具有吸收可见光使水解离产生氢的性能,这使得不同形貌Ga N纳米材料的制备和发光性能的研究再次获得广泛关注。本文采用固相源化学气相传输法,通过金属Ga和氨气直接反应,无催化剂辅助的条件下,在石英衬底上制备出了多种形貌的Ga N纳米结构,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、拉曼(Raman)光谱仪以及光致发光(PL)谱对所制备的Ga N纳米结构进行了表征和发光性能的研究。研究结果如下:1、在0.1个大气压范围内,无催化剂辅助的石英衬底上能够制得Ga N纳米结构。纳米结构是由纳米晶沿着其适宜的生长方向堆叠而成,由于不同生长温度导致金属Ga蒸汽压浓度不同,因而合成的纳米结构具有形貌多样性。Ga N纳米结构的Raman光谱中,A1(LO)模式相对于体相产生了红移,可归因于声子限域效应。Ga N纳米结构的光致发光包括本征发光和缺陷发光,其缺陷发光机制为浅施主能级到价带或浅施主能级到深受主能级间的辐射发光。2、常压时,无催化剂辅助条件下,在镓源附近和石英衬底上均制得Ga N纳米结构。通过改变升温方式、温度、氨气流量以及反应时间等手段能够控制纤锌矿Ga N纳米结构的形貌。随着反应温度的升高,晶粒尺寸变大。当合成温度达到900℃时,晶体的结晶质量变好。当反应时间变长时,晶体的结晶质量变好。与负压下合成的Ga N纳米结构相比,常压下合成的纳米结构的结晶质量更好。光致发光中缺陷发光随着粒径的减小会产生红移,可归因于深受主能级存在一定的波动范围。3、Ga N纳米结构掺Zn后会形成包覆结构,尺寸增加,样品变厚,说明Zn掺杂能提高Ga的蒸气压浓度。同时XRD图谱的峰位产生微小左移,晶格常数略微增大,衍射峰的峰形更加明显,说明Zn掺杂能够改善Ga N纳米结构的结晶度。
[Abstract]:Semiconductor nanomaterials, due to their unique optoelectronic properties and potential applications in miniaturization of devices in the future, have been the focus of research in nanomaterial science. As an important wide band gap semiconductor material, Ga N nanomaterials controlled preparation luminescent properties and deep level behavior in the energy band structure has been a hot topic. At the same time, recent studies have found that, Ga N based nanomaterials have the ability of absorbing visible light to dissociate water to produce hydrogen, which makes the preparation and luminescence properties of different morphologies of Ga N nanomaterials receive more and more attention. In this paper, various morphologies of Ga N nanostructures were prepared on quartz substrates by solid source chemical vapor transport method by direct reaction of metal Ga with ammonia gas and without catalyst. (XRD), was used by X-ray diffractometer. Scanning electron microscopy (SEM) (SEM), Raman (Raman) spectrometer and photoluminescence (PL) spectroscopy were used to characterize and characterize the Ga N nanostructures. The results are as follows: 1. In the range of 0.1 atmospheres, Ga N nanostructures can be prepared on quartz substrates without catalyst. The nanostructures are stacked by nanocrystalline along its proper growth direction. Due to the different growth temperature, the Ga vapor pressure concentration is different, so the synthesized nanostructures have a variety of. Ga N nanostructures in the Raman spectra. The A1 (LO) mode has a red shift relative to the bulk phase, which can be attributed to the phonon limiting effect. The photoluminescence of. Ga N nanostructures includes intrinsic luminescence and defect luminescence. The mechanism of defect luminescence is luminescence from shallow donor energy level to valence band or from shallow donor energy level to deep principal energy level. 2. At atmospheric pressure, Ga N nanostructures are prepared near gallium source and on quartz substrate under the condition of no catalyst. The morphology of wurtzite Ga N nanostructures can be controlled by changing the temperature, ammonia flow rate and reaction time. The grain size increases with the increase of reaction temperature. When the synthesis temperature reaches 900 鈩，
本文编号：2317900
[Abstract]:Semiconductor nanomaterials, due to their unique optoelectronic properties and potential applications in miniaturization of devices in the future, have been the focus of research in nanomaterial science. As an important wide band gap semiconductor material, Ga N nanomaterials controlled preparation luminescent properties and deep level behavior in the energy band structure has been a hot topic. At the same time, recent studies have found that, Ga N based nanomaterials have the ability of absorbing visible light to dissociate water to produce hydrogen, which makes the preparation and luminescence properties of different morphologies of Ga N nanomaterials receive more and more attention. In this paper, various morphologies of Ga N nanostructures were prepared on quartz substrates by solid source chemical vapor transport method by direct reaction of metal Ga with ammonia gas and without catalyst. (XRD), was used by X-ray diffractometer. Scanning electron microscopy (SEM) (SEM), Raman (Raman) spectrometer and photoluminescence (PL) spectroscopy were used to characterize and characterize the Ga N nanostructures. The results are as follows: 1. In the range of 0.1 atmospheres, Ga N nanostructures can be prepared on quartz substrates without catalyst. The nanostructures are stacked by nanocrystalline along its proper growth direction. Due to the different growth temperature, the Ga vapor pressure concentration is different, so the synthesized nanostructures have a variety of. Ga N nanostructures in the Raman spectra. The A1 (LO) mode has a red shift relative to the bulk phase, which can be attributed to the phonon limiting effect. The photoluminescence of. Ga N nanostructures includes intrinsic luminescence and defect luminescence. The mechanism of defect luminescence is luminescence from shallow donor energy level to valence band or from shallow donor energy level to deep principal energy level. 2. At atmospheric pressure, Ga N nanostructures are prepared near gallium source and on quartz substrate under the condition of no catalyst. The morphology of wurtzite Ga N nanostructures can be controlled by changing the temperature, ammonia flow rate and reaction time. The grain size increases with the increase of reaction temperature. When the synthesis temperature reaches 900 鈩，
本文编号：2317900
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