改进的溶胶凝胶法制备FTO透明导电薄膜
发布时间：2018-11-22 12:21
【摘要】：透明导电氧化物薄膜(TCO)既有优异的导电性,又在可见光范围内具有良好的透光性,已经成为平板显示器、太阳能电池和透明电子器件中不可或缺的材料。在TCO薄膜中,氟掺杂二氧化锡(FTO)薄膜制备成本相对低廉,热稳定性与化学稳定性高,具有良好的光电性能。制备FTO薄膜的方法有很多,本文在普通溶胶凝胶的基础上,对溶胶的制备方法和成膜工艺过程加以改进,制备了光电性能优异的FTO薄膜。为了减少阴离子杂质对FTO薄膜光电性能的影响,去除薄膜中的阴离子杂质,本文通过干凝胶再溶解法制备溶胶,有效地去除溶胶中Cl-离子含量,减少了Cl-离子对载流子的散射作用,提高了FTO薄膜的光电性能。为了减少玻璃基片中的阳离子杂质对FTO薄膜光电性能的影响,先在玻璃基底上旋涂一层Si O2膜,有效地阻止了玻璃中的Na+,Ca+等杂质离子进入FTO薄膜。此外,相对于在空气中退火的样品,将干燥完毕的FTO薄膜在氮气保护气氛中退火,薄膜的导电性明显得到提高。本文讨论了溶剂、氟掺杂浓度、溶胶浓度、PH值、稳定剂、加水量对FTO溶胶质量的影响。选用无水乙醇作溶剂,乙酸作PH值调节剂和稳定剂,当溶胶浓度为0.4 mol/L,氟掺杂浓度为20%,PH=3,H2O的量为5 ml时,配置的溶胶均匀、澄清、透明,溶胶成熟快,丁达尔效应明显,制备的薄膜表面均匀平整、透光性好、电阻率低。本文探讨了成膜工艺中旋涂层数、退火温度和退火气氛对FTO薄膜光电性能的影响。通过扫描电镜测试薄膜的横切面,可以得出每层薄膜的厚度约75 nm。当掺杂浓度为20%,膜厚为600 nm时,薄膜电阻率可达8.45×10-3?·cm,平均透射率为75%。随着退火温度的上升,薄膜的导电性和透光性逐渐提高,当退火温度达到500℃时,薄膜的光电性能最佳。在氮气保护下退火1小时,制备出的薄膜比在空气中退火得到的薄膜电导率提高4倍,对透射率的影响不大。
[Abstract]:Transparent conductive oxide thin film (TCO) is an indispensable material for flat panel display solar cells and transparent electronic devices due to its excellent conductivity and good transmittance in the visible range. Fluorine-doped tin dioxide (FTO) thin films are characterized by relatively low cost, high thermal and chemical stability and good optoelectronic properties in TCO films. There are many methods for preparing FTO thin films. Based on the ordinary sol-gel, the preparation method and the process of film formation are improved in this paper, and the FTO thin films with excellent optoelectronic properties are prepared. In order to reduce the influence of anionic impurities on the photoelectric properties of FTO films and remove the anionic impurities in the films, the sol was prepared by the method of xerogel resolution, and the content of Cl- ions in the sol was effectively removed. The scattering effect of Cl- ions on carriers is reduced, and the optoelectronic properties of FTO thin films are improved. In order to reduce the influence of cationic impurities in glass substrates on the optical and electrical properties of FTO thin films, a layer of Si O 2 films was first coated on the glass substrates, which effectively prevented the Na, Ca ions from entering the FTO films. In addition, compared with the samples annealed in air, the electrical conductivity of the FTO films annealed in nitrogen-shielded atmosphere is obviously improved. The effects of solvent, fluorine concentration, sol concentration, PH value, stabilizer and water content on the quality of FTO sol were discussed. Using anhydrous ethanol as solvent, acetic acid as PH value regulator and stabilizer, when the sol concentration is 0.4 mol/L, fluorine doping concentration is 20 mol/L, the amount of H 2O is 5 ml, the collocation of sol is uniform, clear, transparent, and the sol matures quickly. The Dindall effect is obvious, the surface of the film is uniform and smooth, the film has good transmittance and low resistivity. In this paper, the effects of the number of spin coatings, annealing temperature and annealing atmosphere on the photoelectric properties of FTO thin films are discussed. The thickness of each film is about 75 nm. by scanning electron microscopy. When the doping concentration is 20 and the film thickness is 600 nm, the average transmittance of the film reaches 8.45 脳 10 ~ (-3)? cm,. With the increase of annealing temperature, the electrical conductivity and transmittance of the films increase gradually. When the annealing temperature reaches 500 鈩，
本文编号：2349363
[Abstract]:Transparent conductive oxide thin film (TCO) is an indispensable material for flat panel display solar cells and transparent electronic devices due to its excellent conductivity and good transmittance in the visible range. Fluorine-doped tin dioxide (FTO) thin films are characterized by relatively low cost, high thermal and chemical stability and good optoelectronic properties in TCO films. There are many methods for preparing FTO thin films. Based on the ordinary sol-gel, the preparation method and the process of film formation are improved in this paper, and the FTO thin films with excellent optoelectronic properties are prepared. In order to reduce the influence of anionic impurities on the photoelectric properties of FTO films and remove the anionic impurities in the films, the sol was prepared by the method of xerogel resolution, and the content of Cl- ions in the sol was effectively removed. The scattering effect of Cl- ions on carriers is reduced, and the optoelectronic properties of FTO thin films are improved. In order to reduce the influence of cationic impurities in glass substrates on the optical and electrical properties of FTO thin films, a layer of Si O 2 films was first coated on the glass substrates, which effectively prevented the Na, Ca ions from entering the FTO films. In addition, compared with the samples annealed in air, the electrical conductivity of the FTO films annealed in nitrogen-shielded atmosphere is obviously improved. The effects of solvent, fluorine concentration, sol concentration, PH value, stabilizer and water content on the quality of FTO sol were discussed. Using anhydrous ethanol as solvent, acetic acid as PH value regulator and stabilizer, when the sol concentration is 0.4 mol/L, fluorine doping concentration is 20 mol/L, the amount of H 2O is 5 ml, the collocation of sol is uniform, clear, transparent, and the sol matures quickly. The Dindall effect is obvious, the surface of the film is uniform and smooth, the film has good transmittance and low resistivity. In this paper, the effects of the number of spin coatings, annealing temperature and annealing atmosphere on the photoelectric properties of FTO thin films are discussed. The thickness of each film is about 75 nm. by scanning electron microscopy. When the doping concentration is 20 and the film thickness is 600 nm, the average transmittance of the film reaches 8.45 脳 10 ~ (-3)? cm,. With the increase of annealing temperature, the electrical conductivity and transmittance of the films increase gradually. When the annealing temperature reaches 500 鈩，
本文编号：2349363
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