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氧化石墨烯表面原位生长纳米碳化钨工艺及形貌

发布时间:2018-11-23 21:15
【摘要】:为发挥氧化石墨烯在热喷涂碳化钨耐磨涂层中自润滑性能,提高氧化石墨烯与热喷涂粉末的相容性,将偏钨酸铵作为钨的前驱体与氧化石墨烯混合,采用还原技术在氧化石墨烯表面原位生长纳米尺度碳化钨颗粒。借助XRD和SEM研究偏钨酸铵与氧化石墨烯不同摩尔配比、不同升温速率、不同反应温度等条件下获得样品的物相组成及表面形貌。结果表明:氧化石墨烯表面原位生长纳米碳化钨所需原料氧化石墨烯与偏钨酸铵最佳配比优化后对应为n(W)∶n(C)=1∶5,最佳升温速率为70℃/min,最佳还原温度为700℃,该条件下获得样品形貌为纳米片层氧化石墨烯表面弥散分布有尺度均匀的纳米碳化钨颗粒。
[Abstract]:In order to improve the compatibility of graphene oxide and thermal sprayed powder, ammonium metatungstate was mixed with graphene oxide as precursor of tungsten oxide. Nanoscale tungsten carbide particles were grown in situ on the surface of graphene oxide by reduction technique. The phase composition and surface morphology of the samples were studied by XRD and SEM under different molar ratio of ammonium metatungstate to graphene oxide, different heating rate and different reaction temperature. The results show that the optimum ratio of graphene oxide and ammonium metatungstate for in-situ growth of nano-tungsten carbide on graphene oxide surface is n (W): n (C) = 1: 5, and the optimum heating rate is 70 鈩,

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