磁控溅射法制备M型钡铁氧体薄膜工艺及性能研究

发布时间：2018-11-26 07:50

【摘要】：M型钡铁氧体(BaM)具有高的磁晶各向异性、自偏置特性以及优异的化学稳定性,其在毫米波磁性器件和磁记录介质方面具有重要应用。尤其是下一代毫米波磁性器件如环行器、隔离器、滤波器服役时,BaM铁氧体将是未来毫米波磁性器件的重要骨干材料。然而,进入毫米波频段后,磁性器件的体积、重量、尺寸将会对BaM铁氧体提出更加严苛的要求,因此,传统的三维体材料将逐渐向厚膜及薄膜方向发展。为了满足下一代微波器件的需求,迫切需要具有C轴垂直取向的具有高织构度和高剩磁且具有一定厚度的BaM铁氧体薄膜。利用磁控溅射法在Al2O3(006)基片上制备具有一定厚度且织构度高的BaM薄膜,通过X射线衍射仪、场发射扫描电镜、振动样品磁强计等测试手段对薄膜结构及性能进行表征,确定了具有较好织构度的BaM薄膜的制备工艺;通过研究BaM薄膜厚度对薄膜晶体结构及磁性能的影响,确定了单层BaM薄膜的最佳厚度;利用分层溅射法制备多层BaM薄膜,分析其晶体结构、磁性能及应力等性能,获得了具有一定厚度且较好织构度的BaM双层薄膜。研究结果显示:衬底温度为500℃,溅射气压为1.4 Pa,退火温度为850℃时,所制备的BaM薄膜具有较好的C轴垂直取向;厚度在40 nm～90 nm范围的Ba M薄膜在垂直膜面方向获得了最大剩磁比和矫顽力,表现出较好的单轴磁晶各向异性;利用分层溅射法,先溅射100 nm BaM薄膜退火晶化处理作为种子层,在此基础上再溅射100 nm BaM薄膜并退火晶化,制备厚度约为200 nm的双层Ba M薄膜,并于直接溅射200 nm单层BaM薄膜进行比较,结果显示,分层溅射法有利于改善BaM薄膜的C轴垂直取向性,双层薄膜获得了更好的织构度和磁性能。
[Abstract]:M-type barium ferrite (BaM) has high magnetocrystalline anisotropy, self-bias and excellent chemical stability. It has important applications in millimeter wave magnetic devices and magnetic recording media. Especially when the next generation of millimeter-wave magnetic devices such as circulators isolators and filters are in service BaM ferrite will be an important backbone of millimeter-wave magnetic devices in the future. However, after entering millimeter wave band, the volume, weight and size of magnetic devices will put forward more stringent requirements for BaM ferrite. Therefore, the traditional three-dimensional bulk materials will gradually develop towards thick films and thin films. In order to meet the needs of the next generation microwave devices, BaM ferrite thin films with high texture, high remanence and a certain thickness with C-axis vertical orientation are urgently needed. BaM thin films with certain thickness and high texture were prepared on Al2O3 (006) substrates by magnetron sputtering. The structure and properties of the films were characterized by X-ray diffractometer, field emission scanning electron microscope and vibrating sample magnetometer. The preparation process of BaM thin films with good texture was determined. The optimum thickness of monolayer BaM thin films was determined by studying the effect of the thickness of BaM films on the crystal structure and magnetic properties of the films. The multilayer BaM thin films were prepared by stratified sputtering. The crystal structure, magnetic properties and stress properties were analyzed. The BaM bilayer films with a certain thickness and good texture were obtained. The results show that when the substrate temperature is 500 鈩，

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