F掺杂ZnO透明导电薄膜的制备及其在太阳能电池中的应用研究
发布时间：2018-11-27 11:22
【摘要】：由于具备独特的电学和光学特性,氧化锌(Zinc oxide, ZnO)基透明导电薄膜现已广泛应用于薄膜太阳能电池,发光二极管,平面液晶显示和多种其他光电器件中。目前文献中报道的ZnO的n型掺杂主要集中在金属元素的使用上如B、Al、Mn、Ga、In等,而事实上,根据理论研究,F元素也是一种优秀的ZnO的n型掺杂剂。本文中,我们制备了F掺ZnO薄膜(Fluorine-doped zinc oxide, FZO),据此进行了一系列研究,最终将绒面FZO薄膜应用于非晶硅太阳能电池,验证其性能。本论文主要包括以下工作：1.在室温下利用射频磁控溅射技术在柔性聚碳酸酯(Polycarbonate, PC)衬底上制备得到了FZO薄膜,并研究了不同生长参数对于薄膜性能的影响。0.3 Pa时,薄膜获得了最好的电学性能：电阻率7.66×10-2 Ωcm,载流子浓度1.31×1020cm-3, Hall迁移率0.62 cm2V-18-1。所有薄膜在300～2000nm的可见和近红外波段的透过率高于80%。在添加了一层ZnO缓冲层后,得益于晶体沉积质量的改善,FZO/ZnO/PC结构薄膜的电阻率进一步下降到5.82×10-3 Ωcm,对应Hall迁移率从0.618 cm2V-1s-1提升到8.08 cm2 V-1s-1。2.结合传统溶液法和Ar/H等离子体处理对玻璃衬底上沉积得到的FZO透明导电薄膜进行刻蚀,以得到理想的绒面结构。为了获得理想的综合性能,我们利用两种方面相结合以改善薄膜表面陷光性能。当加入Ar/H等离子体处理时,薄膜晶体质量随H2浓度增大略有改善,Ar/H2=100:10时,薄膜获得最小电阻率为1.135×10-3Ωcm,对应载流子浓度2.854×1020 cm-3, Hall迁移率19.29cm2V-1s-1。Ar/H2=100:5时,薄膜得到最佳的表面散射度,在550 nm处的绒度值为52.14%。单纯溶液法制备的薄膜和增加了Ar/H等离子体处理的最优的薄膜被应用于p-i-n型非晶硅太阳能电池的前电极。对于电池性能的测试表明,最终电池表现出的转化效率,后者(4.0%)比前者大大超出(1.0%)。
[Abstract]:Due to its unique electrical and optical properties, ZnO (Zinc oxide, ZnO) thin films have been widely used in thin film solar cells, light-emitting diodes, planar liquid crystal displays and many other optoelectronic devices. At present, the n-type doping of ZnO is mainly focused on the use of metal elements, such as the use of metal elements. In fact, according to theoretical research, element F is also an excellent n-type dopant for ZnO. In this paper, F-doped ZnO thin films have been prepared (Fluorine-doped zinc oxide, FZO), has carried out a series of studies on this basis). Finally, the suede FZO thin film has been applied to amorphous silicon solar cells to verify its performance. This paper mainly includes the following work: 1. FZO thin films were prepared on flexible polycarbonate (Polycarbonate, PC) substrates by RF magnetron sputtering at room temperature. The effects of different growth parameters on the properties of the films were investigated. The best electrical properties were obtained: resistivity 7.66 脳 10-2 惟 cm, carrier concentration 1.31 脳 1020cm-3, Hall mobility 0.62 cm2V-18-1. The transmittance of all the films in the visible and near infrared bands of 300~2000nm is higher than 80. With the addition of a layer of ZnO buffer layer, the resistivity of FZO/ZnO/PC structure film further decreased to 5.82 脳 10-3 惟 cm, thanks to the improvement of crystal deposition quality. The corresponding Hall mobility increased from 0.618 cm2V-1s-1 to 8.08 cm2 V-1s-1.2. The transparent conductive FZO films deposited on glass substrates were etched by conventional solution method and Ar/H plasma treatment to obtain an ideal suede structure. In order to obtain ideal comprehensive properties, we combine two aspects to improve the surface trapping performance of the films. When Ar/H plasma was added, the crystal quality of the film improved slightly with the increase of H _ 2 concentration. When Ar/H2=100:10 was added, the minimum resistivity of the film was 1.135 脳 10 ~ (-3) 惟 cm, corresponding to the carrier concentration of 2.854 脳 1020 cm-3,. When the Hall mobility is 19.29cm2V-1s-1.Ar/H2=100:5, the optimum surface scattering degree is obtained, and the velvet value at 550 nm is 52.14. The thin films prepared by the solution method and the optimal films with the addition of Ar/H plasma were applied to the antecedents of p-i-n amorphous silicon solar cells. The performance tests show that the conversion efficiency of the final battery (4.0%) is much higher than that of the former (1.0%).
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2;TM914.4
本文编号：2360563
[Abstract]:Due to its unique electrical and optical properties, ZnO (Zinc oxide, ZnO) thin films have been widely used in thin film solar cells, light-emitting diodes, planar liquid crystal displays and many other optoelectronic devices. At present, the n-type doping of ZnO is mainly focused on the use of metal elements, such as the use of metal elements. In fact, according to theoretical research, element F is also an excellent n-type dopant for ZnO. In this paper, F-doped ZnO thin films have been prepared (Fluorine-doped zinc oxide, FZO), has carried out a series of studies on this basis). Finally, the suede FZO thin film has been applied to amorphous silicon solar cells to verify its performance. This paper mainly includes the following work: 1. FZO thin films were prepared on flexible polycarbonate (Polycarbonate, PC) substrates by RF magnetron sputtering at room temperature. The effects of different growth parameters on the properties of the films were investigated. The best electrical properties were obtained: resistivity 7.66 脳 10-2 惟 cm, carrier concentration 1.31 脳 1020cm-3, Hall mobility 0.62 cm2V-18-1. The transmittance of all the films in the visible and near infrared bands of 300~2000nm is higher than 80. With the addition of a layer of ZnO buffer layer, the resistivity of FZO/ZnO/PC structure film further decreased to 5.82 脳 10-3 惟 cm, thanks to the improvement of crystal deposition quality. The corresponding Hall mobility increased from 0.618 cm2V-1s-1 to 8.08 cm2 V-1s-1.2. The transparent conductive FZO films deposited on glass substrates were etched by conventional solution method and Ar/H plasma treatment to obtain an ideal suede structure. In order to obtain ideal comprehensive properties, we combine two aspects to improve the surface trapping performance of the films. When Ar/H plasma was added, the crystal quality of the film improved slightly with the increase of H _ 2 concentration. When Ar/H2=100:10 was added, the minimum resistivity of the film was 1.135 脳 10 ~ (-3) 惟 cm, corresponding to the carrier concentration of 2.854 脳 1020 cm-3,. When the Hall mobility is 19.29cm2V-1s-1.Ar/H2=100:5, the optimum surface scattering degree is obtained, and the velvet value at 550 nm is 52.14. The thin films prepared by the solution method and the optimal films with the addition of Ar/H plasma were applied to the antecedents of p-i-n amorphous silicon solar cells. The performance tests show that the conversion efficiency of the final battery (4.0%) is much higher than that of the former (1.0%).
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2;TM914.4
【参考文献】
相关期刊论文 前2条
1 张德恒;透明导电膜中光吸收边的移动[J];半导体杂志;1998年03期
2 郭保智;刘永生;房文健;徐娟;武新芳;彭麟;;氧化锌n型导电机理研究进展[J];硅酸盐通报;2014年01期
，本文编号：2360563
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