铜铟硒及其掺杂化合物半导体薄膜的制备与研究
发布时间：2018-12-05 21:36
【摘要】：作为一种直接带隙半导体,Cu In Se2具有光吸收效率高(105/cm)、可调节的光学能隙、稳定性好、转换效率高以及抗辐射能力强等优点,成为了国际上最具希望大规模应用的太阳能电池吸收层而受到了广泛关注。Cu In Se2的制备方法有溅射法,金属预制层硒化法,电沉积和溶液法等。由于溅射法和预制层硒化法制备均需要较高的成本和较长的时间,不利于大规模的工业化生产,因此简单廉价的溶剂热法制备Cu In Se2成为了研究的热点。本文以氯化铜,氯化铟,氯化铝,硫粉和硒粉为原材料,采用溶剂热法和旋涂法制备Cu In Se2及其掺杂化合物粉体和薄膜,研究掺杂元素和掺杂量对粉体和薄膜的晶体结构、表面形貌、禁带宽度和光学透过率等的影响。使用X射线衍射仪(Panalytical X’Pert)测试其晶体结构,并通过谢乐公式计算出其晶粒尺寸。同时,使用原位变温X射线测试其在不同温度下的晶体结构与物相的变化。使用扫描电镜(Hitachi,S-3400)表征粉体与薄膜的形貌,并观察了掺杂元素种类与掺杂量对其颗粒大小的影响。使用EDAX(Genesis)表征样品的元素组成。使用红外光谱仪(Shimadzu,UV-3600)测试了样品的波长与透过率之间的关系,并通过Kubelka-Munk公式计算出不同掺杂量样品的禁带宽度,从而得出禁带宽度与掺杂量之间的关系。实验发现,随着掺杂Al含量的提高,Cu(In1-x Alx)Se2的XRD衍射峰强度逐步增强,半高宽逐步变小,通过谢乐公式计算得出其晶粒尺寸在逐渐增大,薄膜的AFM图片也表明薄膜的表面粗糙度也逐渐增大。同时,Cu(In1-x Alx)Se2薄膜的禁带宽度也随着掺杂量的提高而逐渐变大。而对于Cu(In1-x Alx)S2体系而言,随着掺杂Al含量的提高,Cu(In1-x Alx)S2的XRD衍射峰强度逐步减弱,半高宽逐步变大,其晶粒尺寸在逐渐减小。薄膜的AFM图片也表明薄膜的表面粗糙度逐渐减小。同时,Cu(In1-x Alx)S2薄膜的禁带宽度随着Al掺杂量的提高而逐渐变大。原位变温XRD测试表明Cu In Se2在500℃无氧环境下,其晶体结构随着温度的升高几乎没有变化,当温度超过500℃之后,Cu In Se2则会分解为Cu Se和In2Se3。而Cu In S2则在温度超过525℃的时候分解为Cu2S和In2S3,而Cu(In1-x Alx)Se2(x=0.1)在600℃下都非常稳定。由此可见,热稳定性Cu(In1-x Alx)Se2(x=0.1)Cu In S2Cu In Se2。通过溶剂热法制备出Cu In Se2及其掺杂化合物粉体与薄膜,对掺杂元素和掺杂量在样品的晶体结构、分解温度、形貌、元素组成、透过率和禁带宽度的影响进行了研究,为CIS系列材料的开发与应用提供了参考。
[Abstract]:As a direct bandgap semiconductor, Cu In Se2 has the advantages of high optical absorption efficiency (105/cm), adjustable optical gap, good stability, high conversion efficiency and strong radiation resistance. As the most promising absorber layer for solar cells in the world, the preparation methods of. Cu In Se2, such as sputtering, selenization of metal prefabricated layer, electrodeposition and solution method, have attracted much attention. The preparation of Cu In Se2 by sputtering method and prefabricated layer selenization method requires high cost and longer time, which is not conducive to large-scale industrial production. Therefore, solvothermal preparation of Cu In Se2 by simple and cheap solvothermal method has become a hot research topic. In this paper, Cu In Se2 and its doped powders and thin films were prepared by solvothermal and spin-coating methods using copper chloride, indium chloride, aluminum chloride, sulfur powder and selenium powder as raw materials. The influence of surface morphology, band gap and optical transmittance. The crystal structure was measured by X-ray diffractometer (Panalytical X'Pert), and the grain size was calculated by Xie Lecong formula. At the same time, the changes of crystal structure and phase at different temperatures were measured by in situ variable temperature X ray. Scanning electron microscopy (Hitachi,S-3400) was used to characterize the morphology of powders and films, and the effects of doping elements and doping amount on the particle size were observed. The elemental composition of the sample was characterized by EDAX (Genesis). The relationship between wavelength and transmittance of samples was measured by infrared spectrometer (Shimadzu,UV-3600), and the band gap of samples with different doping amounts was calculated by Kubelka-Munk formula, and the relationship between forbidden band width and doping amount was obtained. It is found that the intensity of XRD diffraction peak of, Cu (In1-x Alx) Se2 increases with the increase of doped Al content, and the half-maximum width decreases gradually, and the grain size increases gradually through the calculation of Xie Lecong formula. The AFM images of the films also show that the surface roughness of the films increases gradually. At the same time, the bandgap of, Cu (In1-x Alx) Se2 films increases with the increase of doping content. For Cu (In1-x Alx) S2 system, with the increase of Al content, the intensity of XRD diffraction peak of, Cu (In1-x Alx) S2 gradually decreases, the width of half maximum becomes larger, and the grain size decreases gradually. The AFM images of the films also show that the surface roughness of the films decreases gradually. At the same time, the band gap of, Cu (In1-x Alx) S2 thin films increases with the increase of Al doping amount. The in-situ temperature variation XRD test showed that the crystal structure of Cu In Se2 was almost unchanged with the increase of temperature at 500 鈩，
本文编号：2365505
[Abstract]:As a direct bandgap semiconductor, Cu In Se2 has the advantages of high optical absorption efficiency (105/cm), adjustable optical gap, good stability, high conversion efficiency and strong radiation resistance. As the most promising absorber layer for solar cells in the world, the preparation methods of. Cu In Se2, such as sputtering, selenization of metal prefabricated layer, electrodeposition and solution method, have attracted much attention. The preparation of Cu In Se2 by sputtering method and prefabricated layer selenization method requires high cost and longer time, which is not conducive to large-scale industrial production. Therefore, solvothermal preparation of Cu In Se2 by simple and cheap solvothermal method has become a hot research topic. In this paper, Cu In Se2 and its doped powders and thin films were prepared by solvothermal and spin-coating methods using copper chloride, indium chloride, aluminum chloride, sulfur powder and selenium powder as raw materials. The influence of surface morphology, band gap and optical transmittance. The crystal structure was measured by X-ray diffractometer (Panalytical X'Pert), and the grain size was calculated by Xie Lecong formula. At the same time, the changes of crystal structure and phase at different temperatures were measured by in situ variable temperature X ray. Scanning electron microscopy (Hitachi,S-3400) was used to characterize the morphology of powders and films, and the effects of doping elements and doping amount on the particle size were observed. The elemental composition of the sample was characterized by EDAX (Genesis). The relationship between wavelength and transmittance of samples was measured by infrared spectrometer (Shimadzu,UV-3600), and the band gap of samples with different doping amounts was calculated by Kubelka-Munk formula, and the relationship between forbidden band width and doping amount was obtained. It is found that the intensity of XRD diffraction peak of, Cu (In1-x Alx) Se2 increases with the increase of doped Al content, and the half-maximum width decreases gradually, and the grain size increases gradually through the calculation of Xie Lecong formula. The AFM images of the films also show that the surface roughness of the films increases gradually. At the same time, the bandgap of, Cu (In1-x Alx) Se2 films increases with the increase of doping content. For Cu (In1-x Alx) S2 system, with the increase of Al content, the intensity of XRD diffraction peak of, Cu (In1-x Alx) S2 gradually decreases, the width of half maximum becomes larger, and the grain size decreases gradually. The AFM images of the films also show that the surface roughness of the films decreases gradually. At the same time, the band gap of, Cu (In1-x Alx) S2 thin films increases with the increase of Al doping amount. The in-situ temperature variation XRD test showed that the crystal structure of Cu In Se2 was almost unchanged with the increase of temperature at 500 鈩，
本文编号：2365505
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