缺氧型氧化钛薄膜及其压敏电阻的电学性能研究
发布时间：2019-01-02 13:56
【摘要】：本文利用射频反应磁控溅射,通过控制溅射过程主要性能参数,系统的研究了衬底温度、溅射功率、氧分压以及退火温度等对氧化钛薄膜组成、结构及电学性能的影响,并成功研制出一种新型Ti Oy-Ti Ox-Ti Oy(yx)三明治结构多层薄膜压敏电阻,探讨其压敏特性的来源,并对其性能进行改性研究。结果表明:(1)在低温下沉积的薄膜呈现非晶态;随着衬底温度的升高,当高达600°C时,薄膜表面颗粒团聚,出现锐钛矿相。并且随着衬底温度的升高而降低;在低温下制备的薄膜具有电阻变化特性。当氧分压为零时,随着溅射功率的升高,Ti Ox薄膜的组成发生变化,氧元素比例逐渐降低,测试的O/Ti原子比例分别为1.09,1.05,1.06和1.01。随着溅射功率的升高,薄膜表面颗粒逐渐变大,电阻率也随之降低。当氧分压逐渐升高时,薄膜质量高,缺陷变少,电阻率逐渐变大。薄膜电阻率随着退火温度的提高,先升高后降低。薄膜的载流子迁移率的提高和反应过程中产生的吸附态氧的消除两因素共同作用,导致薄膜的电阻率减小。Ti Ox和Ti Oy薄膜由于厚度的不同,转折点也不一样,分别是500-600℃和600-700℃。(2)通过改变溅射过程中的氧分压得到了Ti Oy-Ti Ox-Ti Oy(yx)三明治结构薄膜压敏电阻器。研究发现这样的多层薄膜呈现良好的非线性行为,不同于纯单层钛氧化物薄膜的线性行为。获得的三明治结构的复合薄膜的压敏特性行为可以解释为陷阱和电子的捕获和释放。(3)300、400℃的退火后,三明治结构薄膜压敏电阻器样品的非线性基本保持不变,漏电流却变小;而样品经过500℃退火后,非线性急剧变大,漏电流也明显减小;经过600、700℃退火后,样品没有表现出非线性,且电阻率较低。本实验范围内获得的最佳性能为:非线性系数为13,压敏电压为0.05 V/nm,漏电流0.15 m A/cm2。随着中间层功率的增大,Ti Oy-Ti Ox-Ti Oy(yx)三明治结构薄膜压敏电阻器非线性系数降低、压敏电压降低、漏电流增大。本实验范围内获得的最佳性能为:非线性系数为13.4,压敏电压为0.93 V/nm,漏电流0.54m A/cm2。
[Abstract]:In this paper, the effects of substrate temperature, sputtering power, oxygen partial pressure and annealing temperature on the composition, structure and electrical properties of titanium oxide films were systematically studied by means of RF reactive magnetron sputtering. A novel multilayer thin film varistor with Ti Oy-Ti Ox-Ti Oy (yx) sandwich structure was successfully developed, the source of its varistor characteristics was discussed, and the properties of the resistor were studied. The results show that: (1) the films deposited at low temperature are amorphous, and with the increase of substrate temperature, when the substrate temperature is as high as 600 掳C, the particles on the surface of the films are agglomerated and anatase phase appears. With the increase of substrate temperature, the films prepared at low temperature have the characteristic of resistance variation. When the oxygen partial pressure is 00:00, the composition of, Ti Ox film changes with the increase of sputtering power, and the proportion of oxygen elements decreases gradually. The measured O/Ti atomic ratios are 1.09U 1.05U 1.06 and 1.01a, respectively. With the increase of sputtering power, the surface particles become larger and the resistivity decrease. When the oxygen partial pressure increases gradually, the film quality is higher, the defect is less, and the resistivity becomes larger. The resistivity of the films increases first and then decreases with the increase of annealing temperature. The increase of carrier mobility of the film and the elimination of the adsorbed oxygen produced in the reaction process result in the decrease of the resistivity of the. Ti Ox film and the reduction of the thickness of the Ti Oy film, and the turning point of the film is different because of the difference in thickness. They are 500-600 鈩，
本文编号：2398578
[Abstract]:In this paper, the effects of substrate temperature, sputtering power, oxygen partial pressure and annealing temperature on the composition, structure and electrical properties of titanium oxide films were systematically studied by means of RF reactive magnetron sputtering. A novel multilayer thin film varistor with Ti Oy-Ti Ox-Ti Oy (yx) sandwich structure was successfully developed, the source of its varistor characteristics was discussed, and the properties of the resistor were studied. The results show that: (1) the films deposited at low temperature are amorphous, and with the increase of substrate temperature, when the substrate temperature is as high as 600 掳C, the particles on the surface of the films are agglomerated and anatase phase appears. With the increase of substrate temperature, the films prepared at low temperature have the characteristic of resistance variation. When the oxygen partial pressure is 00:00, the composition of, Ti Ox film changes with the increase of sputtering power, and the proportion of oxygen elements decreases gradually. The measured O/Ti atomic ratios are 1.09U 1.05U 1.06 and 1.01a, respectively. With the increase of sputtering power, the surface particles become larger and the resistivity decrease. When the oxygen partial pressure increases gradually, the film quality is higher, the defect is less, and the resistivity becomes larger. The resistivity of the films increases first and then decreases with the increase of annealing temperature. The increase of carrier mobility of the film and the elimination of the adsorbed oxygen produced in the reaction process result in the decrease of the resistivity of the. Ti Ox film and the reduction of the thickness of the Ti Oy film, and the turning point of the film is different because of the difference in thickness. They are 500-600 鈩，
本文编号：2398578
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