磁控溅射装置中氩—电负性气体放电研究
发布时间：2019-01-04 10:40
【摘要】：磁控溅射是应用最普遍的一种溅射沉积技术。氩与电负性气体放电在磁控溅射薄膜制备中发挥着极其重要的作用。等离子体中各种粒子的分布,电子温度的大小对薄膜的质量都有极其重要的影响。本项研究通过实验讨论了不同溅射电源,不同功率,Ar/O_2混合比对基体悬浮电位与饱和电流数值的变化,得出混合气体放电中等离子体特性。通过建立二维磁控溅射装置模型,分别对磁控溅射中Ar/O_2,Ar/O_2/Cl_2混合气体放电进行了数值模拟研究,得到主要粒子密度的分布图和电子温度图,研究反应腔半径,混合比与压强对等离子体特性的影响。本文研究内容如下:实验分别采用直流和脉冲直流电源溅射,在不同功率的情况下溅射Zn靶,改变氩氧混合比,用直流电源测量基体悬浮电位与饱和电流变化,探讨电源驱动方式和混合比对等离子体行为的影响。结果表明混合比的变化对基体附近的离子密度没有影响。随着氧气流量的增加,基体附近的电子能量降低。直流驱动电源溅射条件下,基体的悬浮电位与饱和电流都要比脉冲直流电源的大。随着溅射功率的增加,悬浮电位不变,饱和电流升高。通过建立二维磁控溅射装置模型来模拟混合比和压强对Ar/O_2混合气体放电的影响。模拟发现,在压强为5 mTorr时,Ar2+为混合气体等离子体中的主要带电粒子,O_2+为主要氧离子。气体混合比几乎不会改变电子和氩亚稳态粒子的密度。随着氩比例的增加,Ar2+在等离子体中最大密度也随增加,O和O_2+的最大密度则会减小。但混合比的变化不会改变基体附近的Ar2+与O_2+密度值。随着氩比例的增加,电子温度略有下降。主要带电粒子密度随着压强从5mTorr升至10mTorr而单调增加,电子温度与氩亚稳态粒子的密度随压强增而下降。通过建立新的二维磁控溅射装置模型来模拟Ar/O_2/Cl_2混合气体放电的等离子体特性。主要粒子为Ar**,Ar*,e,Ar2+,Cl,Cl_2+,O(3P)和O_2+。当反应腔扩大时,磁场设计尤为重要,如果采用不对称磁极,可提高基底位置上的等离子密度分布的均匀性。在Ar/O_2/Cl_2的混合比例从9:0.2:1变化到9:1:0.2时,主要粒子几乎不变,Cl_2+离子和Cl原子的浓度明显下降,但电子,Ar的激发态和O原子的浓度略有增加。主要粒子分布受到压强的影响,3 mTorr处的电子密度比6 mTorr处的电子密度要低,且更为不均匀。Cl原子和O原子密度的增加则相对较小。
[Abstract]:Magnetron sputtering is one of the most widely used sputtering deposition techniques. Argon and electronegativity gas discharge play an important role in the preparation of magnetron sputtering films. The distribution of all kinds of particles in plasma and the magnitude of electron temperature have an extremely important influence on the quality of thin films. In this study, the effects of different sputtering power, different power and Ar/O_2 mixing ratio on the suspension potential and saturation current of the substrate are discussed experimentally, and the plasma characteristics in the mixed gas discharge are obtained. By establishing a two-dimensional magnetron sputtering device model, the Ar/O_2,Ar/O_2/Cl_2 mixed gas discharge in magnetron sputtering was numerically simulated, and the distribution of the main particle density and the electron temperature diagram were obtained. The effects of reaction cavity radius, mixing ratio and pressure on plasma characteristics were studied. The main contents of this paper are as follows: DC and pulsed DC power sources are used to sputtering the Zn target under different power conditions, the mixture ratio of argon and oxygen is changed, and the changes of the suspension potential and saturation current of the substrate are measured by DC power supply. The influence of power drive mode and mixing ratio on plasma behavior is discussed. The results show that the change of mixing ratio has no effect on the ion density near the matrix. With the increase of oxygen flow rate, the electron energy near the matrix decreases. The levitation potential and saturation current of the substrate are larger than those of the pulsed DC power supply under the condition of DC power supply sputtering. With the increase of sputtering power, the levitation potential remains constant and the saturation current increases. The effects of mixing ratio and pressure on Ar/O_2 mixed gas discharge were simulated by establishing a two-dimensional magnetron sputtering device model. When the pressure is 5 mTorr, Ar2 is the main charged particle in the mixed gas plasma, and O _ s _ 2 is the main oxygen ion. The mixture ratio of gas hardly changes the density of electron and argon metastable particles. With the increase of argon ratio, the maximum density of Ar2 in plasma increases, while the maximum density of O and O _ 2 decreases. However, the change of mixing ratio does not change the density of Ar2 and O _ 2 near the matrix. With the increase of argon ratio, the electron temperature decreases slightly. The density of the main charged particles increases monotonously with the increase of pressure from 5mTorr to 10mTorr, and the electron temperature and the density of argon metastable particles decrease with the increase of pressure. A new two-dimensional magnetron sputtering device model was developed to simulate the plasma characteristics of Ar/O_2/Cl_2 mixed gas discharge. The main particles are Ar**,Ar*,e,Ar2, Cl,Cl_2, O (3P) and O _ 2. When the reaction cavity is enlarged, the magnetic field design is particularly important. If the asymmetric magnetic pole is used, the uniformity of plasma density distribution on the substrate can be improved. When the mixing ratio of Ar/O_2/Cl_2 changes from 9: 0.2: 1 to 9: 1: 0.2, the main particle is almost unchanged, the concentration of Cl_2 ion and Cl atom decreases obviously, but the electron, The excited state of Ar and the concentration of O atom increase slightly. The electron density at 3 mTorr is lower than that at 6 mTorr, and the density of Cl and O atoms is relatively small.
【学位授予单位】：辽宁科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TB383.2
本文编号：2400173
[Abstract]:Magnetron sputtering is one of the most widely used sputtering deposition techniques. Argon and electronegativity gas discharge play an important role in the preparation of magnetron sputtering films. The distribution of all kinds of particles in plasma and the magnitude of electron temperature have an extremely important influence on the quality of thin films. In this study, the effects of different sputtering power, different power and Ar/O_2 mixing ratio on the suspension potential and saturation current of the substrate are discussed experimentally, and the plasma characteristics in the mixed gas discharge are obtained. By establishing a two-dimensional magnetron sputtering device model, the Ar/O_2,Ar/O_2/Cl_2 mixed gas discharge in magnetron sputtering was numerically simulated, and the distribution of the main particle density and the electron temperature diagram were obtained. The effects of reaction cavity radius, mixing ratio and pressure on plasma characteristics were studied. The main contents of this paper are as follows: DC and pulsed DC power sources are used to sputtering the Zn target under different power conditions, the mixture ratio of argon and oxygen is changed, and the changes of the suspension potential and saturation current of the substrate are measured by DC power supply. The influence of power drive mode and mixing ratio on plasma behavior is discussed. The results show that the change of mixing ratio has no effect on the ion density near the matrix. With the increase of oxygen flow rate, the electron energy near the matrix decreases. The levitation potential and saturation current of the substrate are larger than those of the pulsed DC power supply under the condition of DC power supply sputtering. With the increase of sputtering power, the levitation potential remains constant and the saturation current increases. The effects of mixing ratio and pressure on Ar/O_2 mixed gas discharge were simulated by establishing a two-dimensional magnetron sputtering device model. When the pressure is 5 mTorr, Ar2 is the main charged particle in the mixed gas plasma, and O _ s _ 2 is the main oxygen ion. The mixture ratio of gas hardly changes the density of electron and argon metastable particles. With the increase of argon ratio, the maximum density of Ar2 in plasma increases, while the maximum density of O and O _ 2 decreases. However, the change of mixing ratio does not change the density of Ar2 and O _ 2 near the matrix. With the increase of argon ratio, the electron temperature decreases slightly. The density of the main charged particles increases monotonously with the increase of pressure from 5mTorr to 10mTorr, and the electron temperature and the density of argon metastable particles decrease with the increase of pressure. A new two-dimensional magnetron sputtering device model was developed to simulate the plasma characteristics of Ar/O_2/Cl_2 mixed gas discharge. The main particles are Ar**,Ar*,e,Ar2, Cl,Cl_2, O (3P) and O _ 2. When the reaction cavity is enlarged, the magnetic field design is particularly important. If the asymmetric magnetic pole is used, the uniformity of plasma density distribution on the substrate can be improved. When the mixing ratio of Ar/O_2/Cl_2 changes from 9: 0.2: 1 to 9: 1: 0.2, the main particle is almost unchanged, the concentration of Cl_2 ion and Cl atom decreases obviously, but the electron, The excited state of Ar and the concentration of O atom increase slightly. The electron density at 3 mTorr is lower than that at 6 mTorr, and the density of Cl and O atoms is relatively small.
【学位授予单位】：辽宁科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TB383.2
【参考文献】
相关期刊论文 前3条
1 曹政;蒋百灵;杨波;鲁媛媛;;不同非平衡度磁场环境中溅射等离子体的诊断与分析[J];真空科学与技术学报;2011年06期
2 钱沐杨;任春生;王德真;冯岩;张家良;;Atmospheric Pressure Cold Argon/Oxygen Plasma Jet Assisted by Preionization of Syringe Needle Electrode[J];Plasma Science and Technology;2010年05期
3 徐金洲;钟平;李嘉灵;林捷;刁颖;张菁;;Characteristics of Coaxial Dielectric Barrier Discharge at an Atmospheric Pressure with a Swirling Gas Argon/Oxygen Mixture for the Surface Modification of Polyester Fiber Cord[J];Plasma Science and Technology;2010年05期
相关会议论文 前1条
1 石永敬;龙思远;王杰;潘复生;;直流磁控溅射研究进展[A];2010中国·重庆第七届表面工程技术学术论坛暨展览会论文集[C];2010年
相关博士学位论文 前1条
1 李志;氩/氨混合气体放电的模拟[D];大连理工大学;2013年
相关硕士学位论文 前2条
1 林锐;直流正极性下导线电晕放电特性及影响因素的研究[D];重庆大学;2009年
2 高峰;氩气辉光放电阴极鞘层区域微观特性研究[D];电子科技大学;2002年
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