聚硅氮烷旋涂介电材料研究进展

发布时间：2019-03-10 21:15

【摘要】：聚硅氮烷作为旋涂介电层的基础材料,可通过旋涂法、特定条件下转化来制备SiO_2介电层,工艺简单,介电层性能优异,有望克服传统化学气相沉积方法的缺点,在微电子领域具有重要的应用价值。系统总结分析了聚硅氮烷分子结构、基材表面处理方式、聚硅氮烷-二氧化硅转化方法以及旋涂层后处理方法等对所制备介电层性能的影响。发现采用全氢聚硅氮烷(PHPS)为原料,基体表面经亲水化处理,利用紫外-高温结合的转化方式,并结合等离子后处理工艺可以得到高质量的SiO_2介电层。简述了该旋涂介电材料在晶体管和低k多孔材料等领域的应用。基于以上分析,聚硅氮烷在旋涂介电层方面有巨大的潜力,对其分子结构的精细化控制、转化工艺的深入研究、应用领域的进一步拓宽是未来该材料的发展方向。
[Abstract]:As the basic material of spin-coated dielectric layer, polysilazane can be used to prepare SiO_2 dielectric layer by spin-coating and conversion under specific conditions. The process is simple and the dielectric layer has excellent performance, which is expected to overcome the shortcomings of traditional chemical vapor deposition methods. It has important application value in the field of microelectronics. The effects of molecular structure of polysilazane, surface treatment method of substrate, conversion method of polysilazane-silica and post-treatment method of spin coating on the properties of the prepared dielectric layer were summarized and analyzed systematically. It is found that the high quality (PHPS) dielectric layer can be obtained by using hydrophilic polysilazane (PHPS) as raw material, hydrophilic treatment, ultraviolet-high temperature combination transformation and plasma post-treatment process. The applications of the spin-coated dielectric material in transistors and low k porous materials are briefly described. Based on the above analysis, polysilazane has great potential in spin-coated dielectric layer. The fine control of its molecular structure, in-depth study of conversion process, and the further broadening of its application field are the future development directions of the material.
【作者单位】：中国科学院化学研究所分子科学科教融合卓越中心;中国科学院大学化学与化工学院;中国科学院微电子研究所;
【基金】：国家自然科学基金资助项目(51302270)
【分类号】：O634.41;TB34

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