AAO基光谱选择性吸收涂层的制备及性能研究
发布时间：2019-04-28 18:41
【摘要】：本文通过程控电源设定周期性变电压产生阶跃电流进行阳极氧化,能够产生具有高、低孔隙率层周期性变化的分枝管道AAO结构,从而达到孔隙率的突变制备出具有完整光子禁带的AAO光子晶体氧化膜,进而在不同条件下向AAO光子晶体膜孔内以50 Hz的交流频率沉积Cu-Ni纳米复合粒子,制备出具有较高吸收率、较低发射率,且具有耐蚀性和耐高温热稳定性的AAO光谱选择性吸收涂层。探讨了AAO光子晶体层的制备过程,并对光子晶体层的微观形貌,组织结构做了分析研究。研究表明:在课题实验体系探究下制备制得光子带隙的位置分别处于648nm和528nm附近具有结构色特征的AAO光子晶体。探讨了周期性氧化的时间参数对AAO光子晶体禁带位置的移动调制,研究表明:在周期性时间参数t0=1200 s、t_1=40 s、t_2=36.2 s、t_3=24.46 s、t_4=61.42 s、t5=128 s,周期性电压参数U1=3.2V、U2=7.0V、U3=5.2V、U4=3.8V;温度20~25/℃;氧化周期N=80条件下,得到目标光子禁带位置在4000 nm附近波段。分析了具备光子晶体层的试样在三种交流电压11 V、14V、17V(有效值)沉积过程中涂层表面变化及其对吸收层的影响,研究表明:交流电沉积的负半周局部氧化膜孔中H+放电产生的H2致使局部氧化膜破碎剥落,有少量附着物碎屑的存在;吸收层呈现出“毛皮”状微观表面,得到了复合金属粒子纳米棒结构,但局部电流密度过高,沉积速率偏快,造成纳米棒生长取向发生偏移,部分棒状结构发生倾斜交织、团聚,但目标沉积金属元素分布较为均匀;XRD物相分析可知:在本实验溶液环境体系下过高的电压下很难有一价铜化合物的产生,过低的电压下很难有富裕的OH-产生,14V的电压对AAO膜孔中CuAl2O4的生成起着重要的作用。分析了交流电沉积电压、时间、温度对光谱选择性吸收涂层的综合影响,研究表明:交流沉积电压17V、时间700 s、频率50Hz、温度25℃条件下制备的具有AAO光子晶体层结构的太阳能吸收复合涂层的太阳能吸收率最高为0.95,热发射率最低为0.13,品质因子最高为7.3,表现出了良好的太阳光谱选择性吸收性能;通过空白对比,具有光子晶体结构的复合氧化膜涂层有更低的热发射率,目标AAO光子晶体结构对复合氧化膜的热发射有一定的抑制作用;交流电沉积过程中随点沉积温度的升高,试样涂层表层凸凹程度变大;电化学测试结果显示:金属粒子的沉积使试样具有更低的腐蚀速率,耐蚀性较空白对照试样有所提高,水合封孔对大多试样的耐蚀性有所提高;在14V、时间100 s、频率50Hz、温度25℃条件制备的试样具有较好的高温热稳定性,其沉积层中Cu-Ni纳米颗粒、CuAl2O4与电介质Al2O3构成了三元复合体系,CuAl2O4的存在限制了高温环境下金属颗粒Ni、Cu在界面处的扩散,减小了其被氧化的几率,涂层体系的热稳定性得到提高,最高在600℃温度下,涂层品质因子α/ε波动较小。本课题在17V、时间700 s、交流频率50Hz、温度25℃条件下制备的试样太阳能吸收率最高为0.95,热发射率最低为0.13,品质因子最高为7.3,但其耐蚀性较差,高温热稳定性并不理想;在14V、时间100 s、交流频率50Hz、温度25℃条件制备的试样太阳能吸收率最高为0.84,热发射率最低为0.14,品质因子最高为6,且兼具较好耐蚀性与较好的高温热稳定性。
[Abstract]:An AAO photonic crystal oxide film with a complete photonic band gap is prepared by using a program-controlled power supply to set a periodic variable voltage to generate a step current for anodic oxidation, so that a branch pipeline AAO structure with high and low porosity layers can be generated periodically, so that a mutation of the porosity is achieved to prepare an AAO photonic crystal oxide film with a complete photonic band gap, And then the Cu-Ni nano composite particles are deposited at the AC frequency of 50 Hz to the AAO photonic crystal film hole under different conditions to prepare the AAO spectrum selective absorption coating with the high absorption rate, the lower emissivity and the corrosion resistance and the high-temperature-resistant thermal stability. The preparation process of the AAO photonic crystal layer is discussed, and the microstructure and structure of the photonic crystal layer are analyzed and studied. The results show that the photonic band gap is at 648 nm and 528 nm, respectively, with the structure color characteristic of the AAO photonic crystal. The shift modulation of the band gap of AAO photonic crystal is discussed. The results show that the periodic time parameter t0 = 1200s, t _ 1 = 40s, t _ 2 = 36.2 s, t _ 3 = 24.46s, t _ 4 = 61.42s, t5 = 128s, periodic voltage parameter U1 = 3.2 V, U2 = 7.0 V, U3 = 5.2 V, U4 = 3.8V, temperature 20 ~ 25/ 鈩，
本文编号：2467872
[Abstract]:An AAO photonic crystal oxide film with a complete photonic band gap is prepared by using a program-controlled power supply to set a periodic variable voltage to generate a step current for anodic oxidation, so that a branch pipeline AAO structure with high and low porosity layers can be generated periodically, so that a mutation of the porosity is achieved to prepare an AAO photonic crystal oxide film with a complete photonic band gap, And then the Cu-Ni nano composite particles are deposited at the AC frequency of 50 Hz to the AAO photonic crystal film hole under different conditions to prepare the AAO spectrum selective absorption coating with the high absorption rate, the lower emissivity and the corrosion resistance and the high-temperature-resistant thermal stability. The preparation process of the AAO photonic crystal layer is discussed, and the microstructure and structure of the photonic crystal layer are analyzed and studied. The results show that the photonic band gap is at 648 nm and 528 nm, respectively, with the structure color characteristic of the AAO photonic crystal. The shift modulation of the band gap of AAO photonic crystal is discussed. The results show that the periodic time parameter t0 = 1200s, t _ 1 = 40s, t _ 2 = 36.2 s, t _ 3 = 24.46s, t _ 4 = 61.42s, t5 = 128s, periodic voltage parameter U1 = 3.2 V, U2 = 7.0 V, U3 = 5.2 V, U4 = 3.8V, temperature 20 ~ 25/ 鈩，
本文编号：2467872
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